DE1101775B - Vorrichtung zum Ziehen von Einkristallen mit vorbestimmter konstanter Fremdstoffkonzentration - Google Patents
Vorrichtung zum Ziehen von Einkristallen mit vorbestimmter konstanter FremdstoffkonzentrationInfo
- Publication number
- DE1101775B DE1101775B DEI8660A DEI0008660A DE1101775B DE 1101775 B DE1101775 B DE 1101775B DE I8660 A DEI8660 A DE I8660A DE I0008660 A DEI0008660 A DE I0008660A DE 1101775 B DE1101775 B DE 1101775B
- Authority
- DE
- Germany
- Prior art keywords
- crucible
- crystal
- melt
- concentration
- foreign matter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 114
- 239000012535 impurity Substances 0.000 title description 16
- 239000000463 material Substances 0.000 claims description 38
- 239000000126 substance Substances 0.000 claims description 27
- 229910052732 germanium Inorganic materials 0.000 claims description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 21
- 239000000155 melt Substances 0.000 claims description 20
- 238000009826 distribution Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 241000947853 Vibrionales Species 0.000 claims 1
- 238000000034 method Methods 0.000 description 52
- 125000004429 atom Chemical group 0.000 description 22
- 239000012768 molten material Substances 0.000 description 16
- 239000007787 solid Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000013316 zoning Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000004323 axial length Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Chemical group 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22C—FOUNDRY MOULDING
- B22C9/00—Moulds or cores; Moulding processes
- B22C9/22—Moulds for peculiarly-shaped castings
- B22C9/24—Moulds for peculiarly-shaped castings for hollow articles
- B22C9/26—Moulds for peculiarly-shaped castings for hollow articles for ribbed tubes; for radiators
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US327484XA | 1953-05-18 | 1953-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1101775B true DE1101775B (de) | 1961-03-09 |
Family
ID=21866605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEI8660A Pending DE1101775B (de) | 1953-05-18 | 1954-05-15 | Vorrichtung zum Ziehen von Einkristallen mit vorbestimmter konstanter Fremdstoffkonzentration |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE528916A (enrdf_load_stackoverflow) |
| CH (1) | CH327484A (enrdf_load_stackoverflow) |
| DE (1) | DE1101775B (enrdf_load_stackoverflow) |
| GB (1) | GB754767A (enrdf_load_stackoverflow) |
| NL (1) | NL107897C (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3342560A (en) * | 1963-10-28 | 1967-09-19 | Siemens Ag | Apparatus for pulling semiconductor crystals |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2998335A (en) * | 1956-02-04 | 1961-08-29 | Telefunken Gmbh | Method and apparatusfor growing single crystals from molten bodies |
| BE562704A (enrdf_load_stackoverflow) * | 1956-11-28 | |||
| NL225605A (enrdf_load_stackoverflow) * | 1957-03-07 | 1900-01-01 | ||
| NL226823A (enrdf_load_stackoverflow) * | 1957-04-15 | 1900-01-01 | ||
| NL112556C (enrdf_load_stackoverflow) * | 1957-06-25 | 1900-01-01 | ||
| DE1158040B (de) * | 1957-11-21 | 1963-11-28 | Int Standard Electric Corp | Vorrichtung zum Ziehen von Einkristallen aus Halbleitermaterial |
| NL121446C (enrdf_load_stackoverflow) * | 1958-11-17 | |||
| NL238923A (enrdf_load_stackoverflow) * | 1959-05-05 | |||
| NL238924A (enrdf_load_stackoverflow) * | 1959-05-05 | |||
| GB1093774A (en) * | 1964-08-04 | 1967-12-06 | Nippon Electric Co | Improvements in or relating to crystal processing |
| US4612082A (en) * | 1982-12-02 | 1986-09-16 | Texas Instruments Incorporated | Arsenic cell stabilization valve for gallium arsenide in-situ compounding |
| US4522791A (en) * | 1982-12-02 | 1985-06-11 | Texas Instruments Incorporated | Arsenic cell stabilization valve for gallium arsenide in-situ compounding |
| GB2147223A (en) * | 1983-10-01 | 1985-05-09 | Stc Plc | Semiconductor substrates |
| JPS6379790A (ja) * | 1986-09-22 | 1988-04-09 | Toshiba Corp | 結晶引上げ装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE973231C (de) * | 1953-01-20 | 1959-12-24 | Telefunken Gmbh | Verfahren zur Herstellung von Einkristallen durch Ziehen aus einer Schmelze |
-
0
- BE BE528916D patent/BE528916A/xx unknown
- NL NL107897D patent/NL107897C/xx active
-
1954
- 1954-05-14 GB GB14184/54A patent/GB754767A/en not_active Expired
- 1954-05-15 DE DEI8660A patent/DE1101775B/de active Pending
- 1954-05-18 CH CH327484D patent/CH327484A/fr unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE973231C (de) * | 1953-01-20 | 1959-12-24 | Telefunken Gmbh | Verfahren zur Herstellung von Einkristallen durch Ziehen aus einer Schmelze |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3342560A (en) * | 1963-10-28 | 1967-09-19 | Siemens Ag | Apparatus for pulling semiconductor crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| CH327484A (fr) | 1958-01-31 |
| BE528916A (enrdf_load_stackoverflow) | |
| GB754767A (en) | 1956-08-15 |
| NL107897C (enrdf_load_stackoverflow) |
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