ES354476A1 - Metodo para producir un filamento continuo de un material cristalino. - Google Patents

Metodo para producir un filamento continuo de un material cristalino.

Info

Publication number
ES354476A1
ES354476A1 ES354476A ES354476A ES354476A1 ES 354476 A1 ES354476 A1 ES 354476A1 ES 354476 A ES354476 A ES 354476A ES 354476 A ES354476 A ES 354476A ES 354476 A1 ES354476 A1 ES 354476A1
Authority
ES
Spain
Prior art keywords
melt
tube
crucible
orifice
pulled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES354476A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tyco International Ltd
Original Assignee
Tyco Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tyco Laboratories Inc filed Critical Tyco Laboratories Inc
Publication of ES354476A1 publication Critical patent/ES354476A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S264/00—Plastic and nonmetallic article shaping or treating: processes
    • Y10S264/19—Inorganic fiber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ES354476A 1967-05-29 1968-05-29 Metodo para producir un filamento continuo de un material cristalino. Expired ES354476A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64183767A 1967-05-29 1967-05-29

Publications (1)

Publication Number Publication Date
ES354476A1 true ES354476A1 (es) 1969-11-01

Family

ID=24574051

Family Applications (1)

Application Number Title Priority Date Filing Date
ES354476A Expired ES354476A1 (es) 1967-05-29 1968-05-29 Metodo para producir un filamento continuo de un material cristalino.

Country Status (12)

Country Link
US (1) US3471266A (enrdf_load_stackoverflow)
BE (1) BE715819A (enrdf_load_stackoverflow)
BR (1) BR6899425D0 (enrdf_load_stackoverflow)
CH (1) CH530818A (enrdf_load_stackoverflow)
DE (1) DE1769481C3 (enrdf_load_stackoverflow)
DK (1) DK127040B (enrdf_load_stackoverflow)
ES (1) ES354476A1 (enrdf_load_stackoverflow)
FR (1) FR1581098A (enrdf_load_stackoverflow)
GB (1) GB1195947A (enrdf_load_stackoverflow)
NL (1) NL6807578A (enrdf_load_stackoverflow)
NO (1) NO123924B (enrdf_load_stackoverflow)
SE (1) SE338558B (enrdf_load_stackoverflow)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650702A (en) * 1970-04-15 1972-03-21 Gen Motors Corp Crystal growth of tetragonal germanium dioxide from a flux
US3687633A (en) * 1970-08-28 1972-08-29 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
BE791024A (fr) * 1971-11-08 1973-05-07 Tyco Laboratories Inc Procede pour developper des cristaux a partir d'un bain d'une matiere
US4012213A (en) * 1973-06-14 1977-03-15 Arthur D. Little, Inc. Apparatus for forming refractory fibers
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
US4082423A (en) * 1976-08-19 1978-04-04 The United States Of America As Represented By The Secretary Of The Navy Fiber optics cable strengthening method and means
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4269652A (en) * 1978-11-06 1981-05-26 Allied Chemical Corporation Method for growing crystalline materials
US4267010A (en) * 1980-06-16 1981-05-12 Mobil Tyco Solar Energy Corporation Guidance mechanism
US5336360A (en) * 1986-08-18 1994-08-09 Clemson University Laser assisted fiber growth
US5126200A (en) * 1986-08-18 1992-06-30 E. I. Du Pont De Nemours And Company Laser assisted fiber growth
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control
US5778960A (en) * 1995-10-02 1998-07-14 General Electric Company Method for providing an extension on an end of an article
US5904201A (en) * 1996-01-18 1999-05-18 General Electric Company Solidification of an article extension from a melt using a ceramic mold
US5676191A (en) * 1996-06-27 1997-10-14 General Electric Company Solidification of an article extension from a melt using an integral mandrel and ceramic mold
US5673744A (en) * 1996-06-27 1997-10-07 General Electric Company Method for forming an article extension by melting of a mandrel in a ceramic mold
US5673745A (en) * 1996-06-27 1997-10-07 General Electric Company Method for forming an article extension by melting of an alloy preform in a ceramic mold
US5743322A (en) * 1996-06-27 1998-04-28 General Electric Company Method for forming an article extension by casting using a ceramic mold
JP4059639B2 (ja) * 2001-03-14 2008-03-12 株式会社荏原製作所 結晶の引上装置
RU2005136369A (ru) * 2003-04-23 2006-06-27 Стелла Кемифа Корпорейшн (Jp) Устройство для получения кристалла фторида
US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
CN101194141B (zh) * 2005-06-10 2013-05-22 圣戈本陶瓷及塑料股份有限公司 透明陶瓷复合物及其制造方法
RU2299280C1 (ru) * 2006-04-18 2007-05-20 Общество с ограниченной ответственностью "Профиль-С" (ООО "Профиль-С") Способ получения профилированных кристаллов тугоплавких соединений
KR101498520B1 (ko) * 2006-09-22 2015-03-04 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 C-플레인 사파이어 장치
US7682452B2 (en) * 2007-04-09 2010-03-23 Sapphire Systems Inc. Apparatus and methods of growing void-free crystalline ceramic products
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2809135A (en) * 1952-07-22 1957-10-08 Sylvania Electric Prod Method of forming p-n junctions in semiconductor material and apparatus therefor
US2944875A (en) * 1953-07-13 1960-07-12 Raytheon Co Crystal-growing apparatus and methods
NL237834A (enrdf_load_stackoverflow) * 1958-04-09
NL121446C (enrdf_load_stackoverflow) * 1958-11-17
NL238924A (enrdf_load_stackoverflow) * 1959-05-05
US3212858A (en) * 1963-01-28 1965-10-19 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material

Also Published As

Publication number Publication date
CH530818A (de) 1972-11-30
DE1769481C3 (de) 1974-01-03
US3471266A (en) 1969-10-07
NO123924B (enrdf_load_stackoverflow) 1972-02-07
NL6807578A (enrdf_load_stackoverflow) 1968-12-02
DE1769481B2 (de) 1973-05-17
GB1195947A (en) 1970-06-24
FR1581098A (enrdf_load_stackoverflow) 1969-09-12
BE715819A (fr) 1968-11-29
SE338558B (enrdf_load_stackoverflow) 1971-09-13
DE1769481A1 (de) 1970-12-23
DK127040B (da) 1973-09-17
BR6899425D0 (pt) 1973-05-10

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