GB915120A - Improvements in or relating to methods of making rod-like bodies by drawing from a melt - Google Patents

Improvements in or relating to methods of making rod-like bodies by drawing from a melt

Info

Publication number
GB915120A
GB915120A GB23484/59A GB2348459A GB915120A GB 915120 A GB915120 A GB 915120A GB 23484/59 A GB23484/59 A GB 23484/59A GB 2348459 A GB2348459 A GB 2348459A GB 915120 A GB915120 A GB 915120A
Authority
GB
United Kingdom
Prior art keywords
melt
bodies
rod
relating
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23484/59A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB915120A publication Critical patent/GB915120A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

<PICT:0915120/III/1> A rod-like body, e.g. of germanium, is drawn upwards from a melt while surrounded by a tubular body of the same substance immersed in an annular melt separated from the aforesaid melt. The tubular body may also be drawn upwards or may be stationary. The melts may have a common or separate supply. The two bodies may be of different purity provided that the melting points and heat conductivities are not substantially different. As shown, a rod 6 is drawn from a melt 5 in a crucible 1 while surrounded by a tube 4 immersed in a melt 3 separated from melt 5 by an annular partition 2. Crucible 1 may have an aperture in its wall for the intermittent or continuous supply of material to melt 3 and thence to melt 5 via one or more slots 7.
GB23484/59A 1958-07-11 1959-07-08 Improvements in or relating to methods of making rod-like bodies by drawing from a melt Expired GB915120A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL229533 1958-07-11

Publications (1)

Publication Number Publication Date
GB915120A true GB915120A (en) 1963-01-09

Family

ID=19751277

Family Applications (1)

Application Number Title Priority Date Filing Date
GB23484/59A Expired GB915120A (en) 1958-07-11 1959-07-08 Improvements in or relating to methods of making rod-like bodies by drawing from a melt

Country Status (5)

Country Link
US (1) US3015592A (en)
DE (1) DE1108185B (en)
FR (1) FR1229489A (en)
GB (1) GB915120A (en)
NL (2) NL229533A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE623518A (en) * 1961-10-13
US3876388A (en) * 1968-10-30 1975-04-08 Siemens Ag Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting
US3915656A (en) * 1971-06-01 1975-10-28 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
DE2138359B2 (en) * 1971-07-31 1973-05-17 Preussag Ag, 3000 Hannover DEVICE FOR PULLING A ROD
US3853489A (en) * 1971-11-08 1974-12-10 Tyco Laboratories Inc A non-wetting aid for growing crystalline bodies
US4032390A (en) * 1974-02-25 1977-06-28 Corning Glass Works Plural crystal pulling from a melt in an annular crucible heated on both inner and outer walls
US3961905A (en) * 1974-02-25 1976-06-08 Corning Glass Works Crucible and heater assembly for crystal growth from a melt
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4289572A (en) * 1976-12-27 1981-09-15 Dow Corning Corporation Method of closing silicon tubular bodies
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US4299648A (en) * 1980-08-20 1981-11-10 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for drawing monocrystalline ribbon from a melt
US4469552A (en) * 1982-04-23 1984-09-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process and apparatus for growing a crystal ribbon
US4647437A (en) * 1983-05-19 1987-03-03 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
US4711695A (en) * 1983-05-19 1987-12-08 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
JPS62128999A (en) * 1985-11-25 1987-06-11 Sumitomo Electric Ind Ltd Method for lifting single crystal using double crucible and said double crucible
JPH0733305B2 (en) * 1987-03-20 1995-04-12 三菱マテリアル株式会社 Method for manufacturing double quartz crucible

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2730470A (en) * 1950-06-15 1956-01-10 Bell Telephone Labor Inc Method of making semi-conductor crystals
DE973231C (en) * 1953-01-20 1959-12-24 Telefunken Gmbh Process for the production of single crystals by pulling from a melt
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
DE1032852B (en) * 1953-11-24 1958-06-26 Siemens Und Halske Ag Process and device for the production of semiconductor crystals by the crystal pulling process from the melt
DE1134967B (en) * 1954-03-02 1962-08-23 Siemens Ag Method for drawing a rod-shaped crystalline semiconductor body
DE962553C (en) * 1954-09-14 1957-04-25 Licentia Gmbh Process for the production of monocrystalline semiconductor bodies in the form of hollow cylinders by drawing from the melt
US2822308A (en) * 1955-03-29 1958-02-04 Gen Electric Semiconductor p-n junction units and method of making the same
US2841559A (en) * 1955-04-27 1958-07-01 Rca Corp Method of doping semi-conductive materials
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices

Also Published As

Publication number Publication date
NL229533A (en)
NL112257C (en)
FR1229489A (en) 1960-09-07
DE1108185B (en) 1961-06-08
US3015592A (en) 1962-01-02

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