DE3872745T2 - Einkristallstab, verfahren und vorrichtung zu seiner ziehung aus einer schmelze. - Google Patents

Einkristallstab, verfahren und vorrichtung zu seiner ziehung aus einer schmelze.

Info

Publication number
DE3872745T2
DE3872745T2 DE8888105661T DE3872745T DE3872745T2 DE 3872745 T2 DE3872745 T2 DE 3872745T2 DE 8888105661 T DE8888105661 T DE 8888105661T DE 3872745 T DE3872745 T DE 3872745T DE 3872745 T2 DE3872745 T2 DE 3872745T2
Authority
DE
Germany
Prior art keywords
melt
single crystal
crystal rod
rod
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888105661T
Other languages
English (en)
Other versions
DE3872745D1 (de
Inventor
Michio Kida
Kensho Sahira
Akikuni Nozoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Application granted granted Critical
Publication of DE3872745D1 publication Critical patent/DE3872745D1/de
Publication of DE3872745T2 publication Critical patent/DE3872745T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2973—Particular cross section
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2973—Particular cross section
    • Y10T428/2976—Longitudinally varying
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/298—Physical dimension
DE8888105661T 1987-04-09 1988-04-08 Einkristallstab, verfahren und vorrichtung zu seiner ziehung aus einer schmelze. Expired - Fee Related DE3872745T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62087463A JPS63252991A (ja) 1987-04-09 1987-04-09 落下防止保持部を有するｃｚ単結晶

Publications (2)

Publication Number Publication Date
DE3872745D1 DE3872745D1 (de) 1992-08-20
DE3872745T2 true DE3872745T2 (de) 1993-01-07

Family

ID=13915578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888105661T Expired - Fee Related DE3872745T2 (de) 1987-04-09 1988-04-08 Einkristallstab, verfahren und vorrichtung zu seiner ziehung aus einer schmelze.

Country Status (4)

Country Link
US (1) US4973518A (de)
EP (1) EP0286133B1 (de)
JP (1) JPS63252991A (de)
DE (1) DE3872745T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69112463T2 (de) * 1990-03-30 1996-02-15 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.
AU8287591A (en) * 1990-06-18 1992-01-07 Charles Machine Works, Inc., The Angle sensor for a steerable boring tool
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
JP3402012B2 (ja) * 1995-04-21 2003-04-28 信越半導体株式会社 単結晶の成長方法及び装置
JP2716023B2 (ja) * 1995-11-22 1998-02-18 日本電気株式会社 シリコン単結晶育成装置
JP3402040B2 (ja) * 1995-12-27 2003-04-28 信越半導体株式会社 単結晶保持装置
JP3528448B2 (ja) * 1996-07-23 2004-05-17 信越半導体株式会社 単結晶の引上げ方法及び装置
JP3449128B2 (ja) * 1996-08-30 2003-09-22 信越半導体株式会社 単結晶成長方法
TW541365B (en) * 1996-08-30 2003-07-11 Sumitomo Sitix Corp Single crystal pulling method and single crystal pulling device
JP3478021B2 (ja) * 1996-09-18 2003-12-10 信越半導体株式会社 結晶保持装置
JP3718921B2 (ja) * 1996-09-18 2005-11-24 信越半導体株式会社 単結晶保持方法および単結晶成長方法
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
KR19980079891A (ko) * 1997-03-27 1998-11-25 모리 레이자로 단결정 성장장치 및 단결정 성장방법
JPH10273390A (ja) * 1997-03-28 1998-10-13 Super Silicon Kenkyusho:Kk 半導体単結晶製造装置
KR19980079892A (ko) * 1997-03-28 1998-11-25 모리 레이자로 단결정 인상장치
JPH10279386A (ja) * 1997-03-31 1998-10-20 Super Silicon Kenkyusho:Kk 単結晶引上げ装置及び単結晶支持機構並びに単結晶引上げ方法
DE69802864T2 (de) 1997-05-21 2002-08-29 Shinetsu Handotai Kk Silizium-Impfkristall, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Silizium-Einkristalls unter Verwendung des Silizium-Impfkristalls
JP3684769B2 (ja) * 1997-06-23 2005-08-17 信越半導体株式会社 シリコン単結晶の製造方法および保持する方法
US5935321A (en) * 1997-08-01 1999-08-10 Motorola, Inc. Single crystal ingot and method for growing the same
DE19737605A1 (de) * 1997-08-28 1999-03-04 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Entlastung eines Impfkristalls
JP3400312B2 (ja) 1997-09-05 2003-04-28 株式会社スーパーシリコン研究所 単結晶引上げ装置及び単結晶引上げ方法
TW370580B (en) * 1997-09-22 1999-09-21 Super Silicon Crystal Res Monocrystal pulling device
KR100244233B1 (en) * 1997-12-03 2000-02-01 Lg Electronics Inc Shadow mask for cathode ray tube and method of manufacturing thereof
US6315827B1 (en) 1998-10-02 2001-11-13 Komatsu Electronics Metals Co., Ltd. Apparatus for producing single crystal
JP4689027B2 (ja) * 2000-10-23 2011-05-25 株式会社Ｓｕｍｃｏ 半導体単結晶引上装置
DE10111953A1 (de) 2001-03-12 2002-09-19 Crystal Growing Systems Gmbh Steuerbare Kristallunterstützung
JP5296992B2 (ja) * 2007-01-31 2013-09-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
JP5679362B2 (ja) * 2013-04-08 2015-03-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
JP5679361B2 (ja) * 2013-04-08 2015-03-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529438B2 (de) * 1973-01-16 1977-03-16
US4289572A (en) * 1976-12-27 1981-09-15 Dow Corning Corporation Method of closing silicon tubular bodies
EP0042901B1 (de) * 1980-06-26 1984-10-31 International Business Machines Corporation Verfahren zum Kontrollieren des Sauerstoffgehaltes von Siliziumstäben, die nach dem Czochralski-Verfahren hergestellt worden sind
JPS5933551B2 (ja) * 1981-04-28 1984-08-16 東北金属工業株式会社 単結晶の製造方法
JPS62288191A (ja) * 1986-06-06 1987-12-15 Kyushu Denshi Kinzoku Kk 単結晶成長方法及びその装置

Also Published As

Publication number Publication date
JPS63252991A (ja) 1988-10-20
EP0286133B1 (de) 1992-07-15
EP0286133A1 (de) 1988-10-12
DE3872745D1 (de) 1992-08-20
US4973518A (en) 1990-11-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee