CH501315A - Verfahren zum Herstellen von durch mindestens eine Isolierschicht getrennten, aus Halbleitermaterial bestehenden Dünnschichtbauelementen - Google Patents

Verfahren zum Herstellen von durch mindestens eine Isolierschicht getrennten, aus Halbleitermaterial bestehenden Dünnschichtbauelementen

Info

Publication number
CH501315A
CH501315A CH921069A CH921069A CH501315A CH 501315 A CH501315 A CH 501315A CH 921069 A CH921069 A CH 921069A CH 921069 A CH921069 A CH 921069A CH 501315 A CH501315 A CH 501315A
Authority
CH
Switzerland
Prior art keywords
separated
insulating layer
semiconductor material
components made
producing thin
Prior art date
Application number
CH921069A
Other languages
German (de)
English (en)
Inventor
Hartmut Dr Seiter
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681769627 external-priority patent/DE1769627C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH501315A publication Critical patent/CH501315A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/026—Solid phase epitaxial growth through a disordered intermediate layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • H10P14/6334—
    • H10P14/6544—
    • H10P14/69391—
    • H10P14/69394—
    • H10P14/69397—
    • H10W10/018—
    • H10W10/10—
    • H10W74/43—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Weting (AREA)
CH921069A 1968-06-19 1969-06-17 Verfahren zum Herstellen von durch mindestens eine Isolierschicht getrennten, aus Halbleitermaterial bestehenden Dünnschichtbauelementen CH501315A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769627 DE1769627C3 (de) 1968-06-19 Verfahren zum Herstellen von mehrschichtigem, durch mindestens eine Isolierschicht getrenntem Halbleitermaterial

Publications (1)

Publication Number Publication Date
CH501315A true CH501315A (de) 1970-12-31

Family

ID=5700213

Family Applications (1)

Application Number Title Priority Date Filing Date
CH921069A CH501315A (de) 1968-06-19 1969-06-17 Verfahren zum Herstellen von durch mindestens eine Isolierschicht getrennten, aus Halbleitermaterial bestehenden Dünnschichtbauelementen

Country Status (8)

Country Link
US (1) US3655439A (cg-RX-API-DMAC10.html)
JP (1) JPS4923621B1 (cg-RX-API-DMAC10.html)
AT (1) AT294919B (cg-RX-API-DMAC10.html)
CH (1) CH501315A (cg-RX-API-DMAC10.html)
FR (1) FR1597033A (cg-RX-API-DMAC10.html)
GB (1) GB1222923A (cg-RX-API-DMAC10.html)
NL (1) NL6909050A (cg-RX-API-DMAC10.html)
SE (1) SE344384B (cg-RX-API-DMAC10.html)

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US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
US3956034A (en) * 1973-07-19 1976-05-11 Harris Corporation Isolated photodiode array
JPS5057381A (cg-RX-API-DMAC10.html) * 1973-09-19 1975-05-19
JPS52120216U (cg-RX-API-DMAC10.html) * 1976-03-11 1977-09-12
JPS52140541U (cg-RX-API-DMAC10.html) * 1976-04-19 1977-10-25
JPS5399730U (cg-RX-API-DMAC10.html) * 1977-01-17 1978-08-12
US4147584A (en) * 1977-12-27 1979-04-03 Burroughs Corporation Method for providing low cost wafers for use as substrates for integrated circuits
JPS5587424A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Semiconductor device
JPS55138229A (en) * 1979-04-13 1980-10-28 Hitachi Ltd Manufacture of dielectric material for insulation- separation substrate
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
DE3072028D1 (en) * 1979-11-23 1987-10-15 Alcatel Nv Dielectrically insulated semiconductor component and process for its manufacture
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
JPS57169246A (en) * 1981-04-10 1982-10-18 Nec Corp Dielectric epitaxial film material
JPS57211267A (en) * 1981-06-22 1982-12-25 Toshiba Corp Semiconductor device and manufacture thereof
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
JPS60202952A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 半導体装置の製造方法
US5264072A (en) * 1985-12-04 1993-11-23 Fujitsu Limited Method for recrystallizing conductive films by an indirect-heating with a thermal-conduction-controlling layer
US5363799A (en) * 1987-08-08 1994-11-15 Canon Kabushiki Kaisha Method for growth of crystal
US5190613A (en) * 1988-10-02 1993-03-02 Canon Kabushiki Kaisha Method for forming crystals
WO1999005728A1 (fr) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Dispositif a semi-conducteur en nitrure
DE19802131B4 (de) * 1998-01-21 2007-03-15 Robert Bosch Gmbh Verfahren zur Herstellung einer monokristallinen Schicht aus einem leitenden oder halbleitenden Material
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (en) * 1999-03-04 2009-12-16 Nichia Corporation Nitride semiconductor laser device
US6839362B2 (en) 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US6844084B2 (en) 2002-04-03 2005-01-18 Saint-Gobain Ceramics & Plastics, Inc. Spinel substrate and heteroepitaxial growth of III-V materials thereon
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US20090283092A1 (en) * 2008-05-13 2009-11-19 Mel Marrone Firelog Pan

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972555A (en) * 1958-11-07 1961-02-21 Union Carbide Corp Gas plating of alumina
US3399072A (en) * 1963-03-04 1968-08-27 North American Rockwell Magnetic materials
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
DE1544261C3 (de) * 1965-03-30 1975-12-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials
US3414434A (en) * 1965-06-30 1968-12-03 North American Rockwell Single crystal silicon on spinel insulators

Also Published As

Publication number Publication date
FR1597033A (cg-RX-API-DMAC10.html) 1970-06-22
DE1769627B2 (de) 1977-03-31
US3655439A (en) 1972-04-11
DE1769627A1 (de) 1971-10-21
SE344384B (cg-RX-API-DMAC10.html) 1972-04-10
JPS4923621B1 (cg-RX-API-DMAC10.html) 1974-06-17
GB1222923A (en) 1971-02-17
NL6909050A (cg-RX-API-DMAC10.html) 1969-12-23
AT294919B (de) 1971-12-10

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