AT308830B - Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkörpers aus Halbleitermaterial - Google Patents

Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkörpers aus Halbleitermaterial

Info

Publication number
AT308830B
AT308830B AT765070A AT765070A AT308830B AT 308830 B AT308830 B AT 308830B AT 765070 A AT765070 A AT 765070A AT 765070 A AT765070 A AT 765070A AT 308830 B AT308830 B AT 308830B
Authority
AT
Austria
Prior art keywords
producing
open
semiconductor material
hollow body
body made
Prior art date
Application number
AT765070A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT308830B publication Critical patent/AT308830B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/073—Hollow body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
AT765070A 1969-08-26 1970-08-24 Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkörpers aus Halbleitermaterial AT308830B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691943359 DE1943359A1 (de) 1969-08-26 1969-08-26 Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkoerpers aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
AT308830B true AT308830B (de) 1973-07-25

Family

ID=5743825

Family Applications (1)

Application Number Title Priority Date Filing Date
AT765070A AT308830B (de) 1969-08-26 1970-08-24 Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkörpers aus Halbleitermaterial

Country Status (9)

Country Link
US (1) US3686378A (de)
JP (1) JPS4819792B1 (de)
AT (1) AT308830B (de)
CH (1) CH508418A (de)
DE (1) DE1943359A1 (de)
FR (1) FR2059682B1 (de)
GB (1) GB1273097A (de)
NL (1) NL7010647A (de)
SE (1) SE351320B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US3853974A (en) * 1970-04-06 1974-12-10 Siemens Ag Method of producing a hollow body of semiconductor material
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
JPS5134263B2 (de) * 1972-03-28 1976-09-25
US3961003A (en) * 1972-05-17 1976-06-01 Dow Corning Corporation Method and apparatus for making elongated Si and SiC structures
DE2541215C3 (de) * 1975-09-16 1978-08-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Herstellung von Siliciumhohlkörpern
FR2364186A1 (fr) * 1976-09-09 1978-04-07 Comp Generale Electricite Procede et dispositif pour deposer une couche d'un verre sur la paroi interne d'un tube
US4238436A (en) * 1979-05-10 1980-12-09 General Instrument Corporation Method of obtaining polycrystalline silicon
US4332751A (en) * 1980-03-13 1982-06-01 The United States Of America As Represented By The United States Department Of Energy Method for fabricating thin films of pyrolytic carbon
US4550014A (en) * 1982-09-09 1985-10-29 The United States Of America As Represented By The United States Department Of Energy Method for production of free-standing polycrystalline boron phosphide film
US6581415B2 (en) 2001-01-31 2003-06-24 G.T. Equipment Technologies, Inc. Method of producing shaped bodies of semiconductor materials
US7780938B2 (en) * 2006-04-13 2010-08-24 Cabot Corporation Production of silicon through a closed-loop process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2974388A (en) * 1958-01-30 1961-03-14 Norton Co Process of making ceramic shells
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
DE1230915B (de) * 1965-03-26 1966-12-22 Siemens Ag Verfahren zum Herstellen von integrierten Halbleiterbauelementen
US3576932A (en) * 1969-02-17 1971-04-27 Texas Instruments Inc Sintering vapor deposited silica on a mandrel designed to reduce shrinkage

Also Published As

Publication number Publication date
US3686378A (en) 1972-08-22
SE351320B (de) 1972-11-20
NL7010647A (de) 1971-03-02
FR2059682B1 (de) 1974-07-12
DE1943359A1 (de) 1971-03-04
GB1273097A (en) 1972-05-03
JPS4819792B1 (de) 1973-06-15
CH508418A (de) 1971-06-15
FR2059682A1 (de) 1971-06-04

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee