AT264590B - Verfahren zum Herstellen eines Kontaktes an einem Halbleiterkörper - Google Patents

Verfahren zum Herstellen eines Kontaktes an einem Halbleiterkörper

Info

Publication number
AT264590B
AT264590B AT910366A AT910366A AT264590B AT 264590 B AT264590 B AT 264590B AT 910366 A AT910366 A AT 910366A AT 910366 A AT910366 A AT 910366A AT 264590 B AT264590 B AT 264590B
Authority
AT
Austria
Prior art keywords
producing
contact
semiconductor body
semiconductor
Prior art date
Application number
AT910366A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of AT264590B publication Critical patent/AT264590B/de

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P90/1906—
    • H10P95/00—
    • H10W10/021—
    • H10W10/061—
    • H10W10/181—
    • H10W10/20—
    • H10W20/425—
    • H10W20/4432—
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
    • C10M2201/02—Water
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/10—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/10—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring
    • C10M2219/102—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring containing sulfur and carbon only in the ring
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/10—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring
    • C10M2219/104—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring containing sulfur and carbon with nitrogen or oxygen in the ring
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/10—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring
    • C10M2219/104—Heterocyclic compounds containing sulfur, selenium or tellurium compounds in the ring containing sulfur and carbon with nitrogen or oxygen in the ring
    • C10M2219/106—Thiadiazoles
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
    • C10N2040/00—Specified use or application for which the lubricating composition is intended
    • C10N2040/20—Metal working
    • C10N2040/22—Metal working with essential removal of material, e.g. cutting, grinding or drilling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y10T428/1259—Oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
AT910366A 1963-12-17 1964-12-10 Verfahren zum Herstellen eines Kontaktes an einem Halbleiterkörper AT264590B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US331168A US3287612A (en) 1963-12-17 1963-12-17 Semiconductor contacts and protective coatings for planar devices

Publications (1)

Publication Number Publication Date
AT264590B true AT264590B (de) 1968-09-10

Family

ID=23292889

Family Applications (2)

Application Number Title Priority Date Filing Date
AT1048964A AT259014B (de) 1963-12-17 1964-12-10 Halbleitereinrichtung und Verfahren zu deren Herstellung
AT910366A AT264590B (de) 1963-12-17 1964-12-10 Verfahren zum Herstellen eines Kontaktes an einem Halbleiterkörper

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT1048964A AT259014B (de) 1963-12-17 1964-12-10 Halbleitereinrichtung und Verfahren zu deren Herstellung

Country Status (3)

Country Link
US (1) US3287612A (de)
AT (2) AT259014B (de)
ES (1) ES307516A1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325702A (en) * 1964-04-21 1967-06-13 Texas Instruments Inc High temperature electrical contacts for silicon devices
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3430334A (en) * 1965-04-01 1969-03-04 Hitachi Ltd Method of manufacturing integrated circuits
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
US3388048A (en) * 1965-12-07 1968-06-11 Bell Telephone Labor Inc Fabrication of beam lead semiconductor devices
US3408733A (en) * 1966-03-22 1968-11-05 Bell Telephone Labor Inc Low resistance contact to diffused junction germanium transistor
US3426252A (en) * 1966-05-03 1969-02-04 Bell Telephone Labor Inc Semiconductive device including beam leads
US3667005A (en) * 1966-06-30 1972-05-30 Texas Instruments Inc Ohmic contacts for semiconductors devices
US3508123A (en) * 1966-07-13 1970-04-21 Gen Instrument Corp Oxide-type varactor with increased capacitance range
US3438121A (en) * 1966-07-21 1969-04-15 Gen Instrument Corp Method of making a phosphorous-protected semiconductor device
US3449825A (en) * 1967-04-21 1969-06-17 Northern Electric Co Fabrication of semiconductor devices
US3445727A (en) * 1967-05-15 1969-05-20 Raytheon Co Semiconductor contact and interconnection structure
US3442012A (en) * 1967-08-03 1969-05-06 Teledyne Inc Method of forming a flip-chip integrated circuit
US3507756A (en) * 1967-08-04 1970-04-21 Bell Telephone Labor Inc Method of fabricating semiconductor device contact
US3518506A (en) * 1967-12-06 1970-06-30 Ibm Semiconductor device with contact metallurgy thereon,and method for making same
US3597834A (en) * 1968-02-14 1971-08-10 Texas Instruments Inc Method in forming electrically continuous circuit through insulating layer
US3658489A (en) * 1968-08-09 1972-04-25 Nippon Electric Co Laminated electrode for a semiconductor device
US3480412A (en) * 1968-09-03 1969-11-25 Fairchild Camera Instr Co Method of fabrication of solder reflow interconnections for face down bonding of semiconductor devices
US3748546A (en) * 1969-05-12 1973-07-24 Signetics Corp Photosensitive device and array
US3661747A (en) * 1969-08-11 1972-05-09 Bell Telephone Labor Inc Method for etching thin film materials by direct cathodic back sputtering
US3663184A (en) * 1970-01-23 1972-05-16 Fairchild Camera Instr Co Solder bump metallization system using a titanium-nickel barrier layer
FR2077718A1 (de) * 1970-02-09 1971-11-05 Comp Generale Electricite
DE2012110A1 (de) * 1970-03-13 1971-09-23 Siemens Ag Verfahren zum Herstellen einer Mehrlagenmetallisierung an elektrischen Bauelementen
US3668484A (en) * 1970-10-28 1972-06-06 Rca Corp Semiconductor device with multi-level metalization and method of making the same
FR2119930B1 (de) * 1970-12-31 1974-08-19 Ibm
US3725743A (en) * 1971-05-19 1973-04-03 Hitachi Ltd Multilayer wiring structure
US3857161A (en) * 1973-02-09 1974-12-31 T Hutchins Method of making a ductile hermetic indium seal
JPS5541031B2 (de) * 1973-02-27 1980-10-21
US3873428A (en) * 1974-02-19 1975-03-25 Bell Telephone Labor Inc Preferential gold electroplating
US3926747A (en) * 1974-02-19 1975-12-16 Bell Telephone Labor Inc Selective electrodeposition of gold on electronic devices
US4016050A (en) * 1975-05-12 1977-04-05 Bell Telephone Laboratories, Incorporated Conduction system for thin film and hybrid integrated circuits
JPS5910059B2 (ja) * 1975-08-29 1984-03-06 ソニー株式会社 半導体装置の製法
US4011144A (en) * 1975-12-22 1977-03-08 Western Electric Company Methods of forming metallization patterns on beam lead semiconductor devices
US4042950A (en) * 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
US4990989A (en) * 1982-03-19 1991-02-05 At&T Bell Laboratories Restricted contact planar photodiode
US4894703A (en) * 1982-03-19 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Restricted contact, planar photodiode
US4507851A (en) * 1982-04-30 1985-04-02 Texas Instruments Incorporated Process for forming an electrical interconnection system on a semiconductor
US4871617A (en) * 1984-04-02 1989-10-03 General Electric Company Ohmic contacts and interconnects to silicon and method of making same
JPS62104066A (ja) * 1985-10-31 1987-05-14 Toshiba Corp 半導体保護装置
US4702967A (en) * 1986-06-16 1987-10-27 Harris Corporation Multiple-layer, multiple-phase titanium/nitrogen adhesion/diffusion barrier layer structure for gold-base microcircuit interconnection
KR100294449B1 (ko) * 1998-07-15 2001-07-12 윤종용 본딩패드하부에형성되는커패시터를구비한반도체집적회로장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL96840C (de) * 1953-05-11 1900-01-01
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
US3212162A (en) * 1962-01-05 1965-10-19 Fairchild Camera Instr Co Fabricating semiconductor devices
US3184824A (en) * 1963-03-27 1965-05-25 Texas Instruments Inc Method for plating a support for a silicon wafer in the manufacture of a semiconductor device

Also Published As

Publication number Publication date
ES307516A1 (es) 1965-12-16
US3287612A (en) 1966-11-22
AT259014B (de) 1967-12-27

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