FR2077718A1 - - Google Patents

Info

Publication number
FR2077718A1
FR2077718A1 FR7004491A FR7004491A FR2077718A1 FR 2077718 A1 FR2077718 A1 FR 2077718A1 FR 7004491 A FR7004491 A FR 7004491A FR 7004491 A FR7004491 A FR 7004491A FR 2077718 A1 FR2077718 A1 FR 2077718A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7004491A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7004491A priority Critical patent/FR2077718A1/fr
Priority to CH138771A priority patent/CH516005A/fr
Priority to BE762218A priority patent/BE762218A/xx
Priority to DE19712104804 priority patent/DE2104804A1/de
Priority to US00113924A priority patent/US3716428A/en
Priority to NL7101664A priority patent/NL7101664A/xx
Publication of FR2077718A1 publication Critical patent/FR2077718A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
FR7004491A 1970-02-09 1970-02-09 Withdrawn FR2077718A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7004491A FR2077718A1 (de) 1970-02-09 1970-02-09
CH138771A CH516005A (fr) 1970-02-09 1971-01-29 Procédé de gravure d'un métal passivable
BE762218A BE762218A (fr) 1970-02-09 1971-01-29 Procede d'attaque d'un metal passivable
DE19712104804 DE2104804A1 (de) 1970-02-09 1971-02-02 Verfahren zum Atzen eines passivier baren Metalls
US00113924A US3716428A (en) 1970-02-09 1971-02-09 Method of etching a metal which can be passivated
NL7101664A NL7101664A (de) 1970-02-09 1971-02-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7004491A FR2077718A1 (de) 1970-02-09 1970-02-09

Publications (1)

Publication Number Publication Date
FR2077718A1 true FR2077718A1 (de) 1971-11-05

Family

ID=9050292

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7004491A Withdrawn FR2077718A1 (de) 1970-02-09 1970-02-09

Country Status (6)

Country Link
US (1) US3716428A (de)
BE (1) BE762218A (de)
CH (1) CH516005A (de)
DE (1) DE2104804A1 (de)
FR (1) FR2077718A1 (de)
NL (1) NL7101664A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4361599A (en) * 1981-03-23 1982-11-30 National Semiconductor Corporation Method of forming plasma etched semiconductor contacts
FR2812400B1 (fr) * 2000-07-28 2002-09-27 Mesatronic Procede de fabrication d'une carte a pointes de contact multiple pour le test de circuits integres a microbilles, et dispositif de test utilisant la carte

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287612A (en) * 1963-12-17 1966-11-22 Bell Telephone Labor Inc Semiconductor contacts and protective coatings for planar devices
US3489656A (en) * 1964-11-09 1970-01-13 Western Electric Co Method of producing an integrated circuit containing multilayer tantalum compounds
US3616401A (en) * 1966-06-30 1971-10-26 Texas Instruments Inc Sputtered multilayer ohmic molygold contacts for semiconductor devices
US3540954A (en) * 1966-12-30 1970-11-17 Texas Instruments Inc Method for manufacturing multi-layer film circuits
US3556951A (en) * 1967-08-04 1971-01-19 Sylvania Electric Prod Method of forming leads on semiconductor devices
US3576722A (en) * 1969-03-26 1971-04-27 Bendix Corp Method for metalizing ceramics

Also Published As

Publication number Publication date
CH516005A (fr) 1971-11-30
BE762218A (fr) 1971-07-29
NL7101664A (de) 1971-08-11
DE2104804A1 (de) 1971-08-19
US3716428A (en) 1973-02-13

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Legal Events

Date Code Title Description
ST Notification of lapse