CH438232A - Verfahren zum Herstellen eines dotierten Halbleiterkörpers und Vorrichtung zum Durchführen dieses Verfahrens - Google Patents

Verfahren zum Herstellen eines dotierten Halbleiterkörpers und Vorrichtung zum Durchführen dieses Verfahrens

Info

Publication number
CH438232A
CH438232A CH487464A CH487464A CH438232A CH 438232 A CH438232 A CH 438232A CH 487464 A CH487464 A CH 487464A CH 487464 A CH487464 A CH 487464A CH 438232 A CH438232 A CH 438232A
Authority
CH
Switzerland
Prior art keywords
producing
carrying
semiconductor body
doped semiconductor
doped
Prior art date
Application number
CH487464A
Other languages
English (en)
Inventor
Goorissen Jan
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH438232A publication Critical patent/CH438232A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/008—Feed or outlet control devices
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/129—Pulse doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • General Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photovoltaic Devices (AREA)
CH487464A 1963-04-19 1964-04-16 Verfahren zum Herstellen eines dotierten Halbleiterkörpers und Vorrichtung zum Durchführen dieses Verfahrens CH438232A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL291753 1963-04-19

Publications (1)

Publication Number Publication Date
CH438232A true CH438232A (de) 1967-06-30

Family

ID=19754628

Family Applications (1)

Application Number Title Priority Date Filing Date
CH487464A CH438232A (de) 1963-04-19 1964-04-16 Verfahren zum Herstellen eines dotierten Halbleiterkörpers und Vorrichtung zum Durchführen dieses Verfahrens

Country Status (11)

Country Link
US (1) US3323954A (de)
AT (1) AT268379B (de)
BE (1) BE646733A (de)
CH (1) CH438232A (de)
DE (1) DE1290924B (de)
DK (1) DK118899B (de)
ES (2) ES298807A1 (de)
FR (1) FR1395147A (de)
GB (1) GB1066593A (de)
NL (2) NL142824C (de)
SE (1) SE307196B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2816234A1 (de) * 1977-04-14 1978-10-26 Westinghouse Electric Corp Verfahren zum dotieren von hochreinem silicium in einem lichtbogenerhitzer

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463715A (en) * 1966-07-07 1969-08-26 Trw Inc Method of cathodically sputtering a layer of silicon having a reduced resistivity
US3880743A (en) * 1968-03-08 1975-04-29 John L Lang Process for preparing organometallic compounds
IL74360A (en) * 1984-05-25 1989-01-31 Wedtech Corp Method of coating ceramics and quartz crucibles with material electrically transformed into a vapor phase
PL217778B1 (pl) * 2011-06-20 2014-08-29 Piotr Medoń Sposób osuszania glikolu i układ do osuszania glikolu
RU2597389C2 (ru) * 2014-10-06 2016-09-10 Акционерное общество "Рязанский завод металлокерамических приборов" (АО "РЗМКП") Способ легирования кремния
CN111321405A (zh) * 2018-12-15 2020-06-23 兰州交通大学 一种航空发动机机匣阻燃涂层电火花多点并行沉积机构

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2616843A (en) * 1947-07-31 1952-11-04 Sheer Charles Arc process for the reduction of metals
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2845894A (en) * 1953-03-04 1958-08-05 Oran T Mcilvaine Metallurgy
US2921892A (en) * 1954-12-08 1960-01-19 Amalgamated Growth Ind Inc Apparatus and process for conducting chemical reactions
BE544843A (de) * 1955-02-25
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
BE547665A (de) * 1955-06-28
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
US3099614A (en) * 1958-12-10 1963-07-30 Sheer Korman Associates Process for reduction of multiple oxides
US3099588A (en) * 1959-03-11 1963-07-30 Westinghouse Electric Corp Formation of semiconductor transition regions by alloy vaporization and deposition
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
US3162526A (en) * 1961-10-26 1964-12-22 Grace W R & Co Method of doping semiconductor materials
US3234051A (en) * 1962-08-07 1966-02-08 Union Carbide Corp Use of two magnetic fields in a low pressure arc system for growing crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2816234A1 (de) * 1977-04-14 1978-10-26 Westinghouse Electric Corp Verfahren zum dotieren von hochreinem silicium in einem lichtbogenerhitzer

Also Published As

Publication number Publication date
AT268379B (de) 1969-02-10
SE307196B (de) 1968-12-23
FR1395147A (fr) 1965-04-09
NL291753A (de)
US3323954A (en) 1967-06-06
DE1290924B (de) 1969-03-20
ES298807A1 (es) 1964-10-16
GB1066593A (en) 1967-04-26
BE646733A (de) 1964-10-19
DK118899B (da) 1970-10-19
NL142824C (de)
ES302727A1 (es) 1965-02-16

Similar Documents

Publication Publication Date Title
CH458171A (de) Verfahren und Vorrichtung zum Herstellen eines Betonkonstruktionsteils
AT264590B (de) Verfahren zum Herstellen eines Kontaktes an einem Halbleiterkörper
AT282930B (de) Verfahren und Vorrichtung zum kontinuierlichen Herstellen von formfesten Rohren
CH415856A (de) Verfahren zum Herstellen eines pn-Übergangs in einer Halbleiteranordnung
CH423728A (de) Verfahren zum Herstellen von pn-Übergängen in Silizium
CH424665A (de) Verfahren und Vorrichtung zum Unterhalt von sanitären Apparaten
CH447056A (de) Verfahren und Vorrichtung zum Reinigen von Wasser
CH425099A (de) Verfahren und Einrichtung zum Herstellen eines starren, zylindrischen Körpers und nach dem Verfahren hergestellter Körper
CH400280A (de) Verfahren und Vorrichtung zum Einbetten eines Leitungsstranges unter die Gelände- oder Gewässersohle
CH463437A (de) Verfahren und Vorrichtung zum Herstellen von schraubenlinienförmig gefalzten Rohren
AT249896B (de) Verfahren und Vorrichtung zum Stranggießen
CH438232A (de) Verfahren zum Herstellen eines dotierten Halbleiterkörpers und Vorrichtung zum Durchführen dieses Verfahrens
CH407962A (de) Vorrichtung zum Herstellen von Halbleiterstäben
AT261288B (de) Verfahren und Vorrichtung zum maschinellen Melken
AT283248B (de) Verfahren und Vorrichtung zum Herstellen eines Rotationskörpers
CH462326A (de) Halbleiteranordnung und Verfahren zum Herstellen einer solchen
CH453310A (de) Polykristalliner Halbleiterkörper und Verfahren zum Herstellen desselben
AT258090B (de) Verfahren und Vorrichtung zum Herstellen einer Schweißverbindung
AT274528B (de) Verfahren und Einrichtung zum Tiefziehen eines Rohlings
CH453692A (de) Verfahren und Vorrichtung zum Herstellen von Polyamidformkörpern
AT240680B (de) Verfahren und Vorrichtung zum Walzen von Gewindebohrern
CH482299A (de) Verfahren zum Dotieren eines Siliciumkörpers
AT260125B (de) Verfahren und Vorrichtung zum Aufbereiten von Wasser
CH454439A (de) Verfahren zum Herstellen eines Kunststoffrohrs und Einrichtung zur Durchführung des Verfahrens
CH420388A (de) Halbleiterbauelement und Verfahren zum Herstellen eines solchen