GB1273097A - Improvements in or relating to the manufacture of hollow bodies of semiconductor material - Google Patents
Improvements in or relating to the manufacture of hollow bodies of semiconductor materialInfo
- Publication number
- GB1273097A GB1273097A GB40616/70A GB4061670A GB1273097A GB 1273097 A GB1273097 A GB 1273097A GB 40616/70 A GB40616/70 A GB 40616/70A GB 4061670 A GB4061670 A GB 4061670A GB 1273097 A GB1273097 A GB 1273097A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor material
- carrier body
- hollow bodies
- relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/073—Hollow body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691943359 DE1943359A1 (de) | 1969-08-26 | 1969-08-26 | Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkoerpers aus Halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1273097A true GB1273097A (en) | 1972-05-03 |
Family
ID=5743825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB40616/70A Expired GB1273097A (en) | 1969-08-26 | 1970-08-24 | Improvements in or relating to the manufacture of hollow bodies of semiconductor material |
Country Status (9)
Country | Link |
---|---|
US (1) | US3686378A (de) |
JP (1) | JPS4819792B1 (de) |
AT (1) | AT308830B (de) |
CH (1) | CH508418A (de) |
DE (1) | DE1943359A1 (de) |
FR (1) | FR2059682B1 (de) |
GB (1) | GB1273097A (de) |
NL (1) | NL7010647A (de) |
SE (1) | SE351320B (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3950479A (en) * | 1969-04-02 | 1976-04-13 | Siemens Aktiengesellschaft | Method of producing hollow semiconductor bodies |
US3853974A (en) * | 1970-04-06 | 1974-12-10 | Siemens Ag | Method of producing a hollow body of semiconductor material |
US3979490A (en) * | 1970-12-09 | 1976-09-07 | Siemens Aktiengesellschaft | Method for the manufacture of tubular bodies of semiconductor material |
JPS5134263B2 (de) * | 1972-03-28 | 1976-09-25 | ||
US3961003A (en) * | 1972-05-17 | 1976-06-01 | Dow Corning Corporation | Method and apparatus for making elongated Si and SiC structures |
DE2541215C3 (de) * | 1975-09-16 | 1978-08-03 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Herstellung von Siliciumhohlkörpern |
FR2364186A1 (fr) * | 1976-09-09 | 1978-04-07 | Comp Generale Electricite | Procede et dispositif pour deposer une couche d'un verre sur la paroi interne d'un tube |
US4238436A (en) * | 1979-05-10 | 1980-12-09 | General Instrument Corporation | Method of obtaining polycrystalline silicon |
US4332751A (en) * | 1980-03-13 | 1982-06-01 | The United States Of America As Represented By The United States Department Of Energy | Method for fabricating thin films of pyrolytic carbon |
US4550014A (en) * | 1982-09-09 | 1985-10-29 | The United States Of America As Represented By The United States Department Of Energy | Method for production of free-standing polycrystalline boron phosphide film |
US6581415B2 (en) | 2001-01-31 | 2003-06-24 | G.T. Equipment Technologies, Inc. | Method of producing shaped bodies of semiconductor materials |
US7780938B2 (en) * | 2006-04-13 | 2010-08-24 | Cabot Corporation | Production of silicon through a closed-loop process |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2974388A (en) * | 1958-01-30 | 1961-03-14 | Norton Co | Process of making ceramic shells |
GB944009A (en) * | 1960-01-04 | 1963-12-11 | Texas Instruments Ltd | Improvements in or relating to the deposition of silicon on a tantalum article |
DE1230915B (de) * | 1965-03-26 | 1966-12-22 | Siemens Ag | Verfahren zum Herstellen von integrierten Halbleiterbauelementen |
US3576932A (en) * | 1969-02-17 | 1971-04-27 | Texas Instruments Inc | Sintering vapor deposited silica on a mandrel designed to reduce shrinkage |
-
1969
- 1969-08-26 DE DE19691943359 patent/DE1943359A1/de active Pending
-
1970
- 1970-07-17 NL NL7010647A patent/NL7010647A/xx unknown
- 1970-07-27 US US58458A patent/US3686378A/en not_active Expired - Lifetime
- 1970-08-18 FR FR707030258A patent/FR2059682B1/fr not_active Expired
- 1970-08-24 AT AT765070A patent/AT308830B/de not_active IP Right Cessation
- 1970-08-24 GB GB40616/70A patent/GB1273097A/en not_active Expired
- 1970-08-24 CH CH1259570A patent/CH508418A/de not_active IP Right Cessation
- 1970-08-25 JP JP45073925A patent/JPS4819792B1/ja active Pending
- 1970-08-26 SE SE11613/70A patent/SE351320B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3686378A (en) | 1972-08-22 |
AT308830B (de) | 1973-07-25 |
FR2059682B1 (de) | 1974-07-12 |
FR2059682A1 (de) | 1971-06-04 |
NL7010647A (de) | 1971-03-02 |
SE351320B (de) | 1972-11-20 |
JPS4819792B1 (de) | 1973-06-15 |
CH508418A (de) | 1971-06-15 |
DE1943359A1 (de) | 1971-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |