JPS57169246A - Dielectric epitaxial film material - Google Patents

Dielectric epitaxial film material

Info

Publication number
JPS57169246A
JPS57169246A JP5404281A JP5404281A JPS57169246A JP S57169246 A JPS57169246 A JP S57169246A JP 5404281 A JP5404281 A JP 5404281A JP 5404281 A JP5404281 A JP 5404281A JP S57169246 A JPS57169246 A JP S57169246A
Authority
JP
Japan
Prior art keywords
substrate
lattice constant
epitaxial film
growing
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5404281A
Other languages
Japanese (ja)
Inventor
Masao Mikami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5404281A priority Critical patent/JPS57169246A/en
Publication of JPS57169246A publication Critical patent/JPS57169246A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

PURPOSE:To obtain an epitaxial film having excellent lattice matching property making the lattice constant of spinel type crystal structure specified value in the spinel type crystal structure growing on a Si single crystal substrate in epitaxial form. CONSTITUTION:A reaction pipe is composed of two quartz pipes of an outer pipe 1 with a 70mm. inside diameter and an inner pipe 2 with a 50mm. inside diameter according to a double pipe system in order to grow Al2FeO4 on the Si single crystal substrate in gaseous-phase epitaxial form, metallic aluminum is positioned at the internal location 3 of the inner pipe 20 and ferrous chloride at a location 4, Al is brought to 600 deg.C and FeCl2 to 650 deg.C, and the Si crystal substrate 7 is placed onto a substrate holder 6 in a growing chamber 5. The temperature of the substrate 7 is brought to 1,030 deg.C, a growing face is made 100, and H2 is flowed at 10l/min and HCl at 20cc/min from an inlet 8 and H2 at 1l/min and CO2 at 100cc/min from an inlet 9 in the flow rate of the gases, thus obtaining the epitaxial film having a lattice constant larger than a 8.08Angstrom lattice constant.
JP5404281A 1981-04-10 1981-04-10 Dielectric epitaxial film material Pending JPS57169246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5404281A JPS57169246A (en) 1981-04-10 1981-04-10 Dielectric epitaxial film material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5404281A JPS57169246A (en) 1981-04-10 1981-04-10 Dielectric epitaxial film material

Publications (1)

Publication Number Publication Date
JPS57169246A true JPS57169246A (en) 1982-10-18

Family

ID=12959535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5404281A Pending JPS57169246A (en) 1981-04-10 1981-04-10 Dielectric epitaxial film material

Country Status (1)

Country Link
JP (1) JPS57169246A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194530A (en) * 1984-03-16 1985-10-03 Toshiba Corp Manufacture of semiconductor device
JPH0940427A (en) * 1995-07-26 1997-02-10 Agency Of Ind Science & Technol Compound metal oxide film
JP2016146495A (en) * 2010-03-18 2016-08-12 株式会社リコー Coating liquid for forming insulator film, insulator film, manufacturing method for insulator film, and manufacturing method for semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3414434A (en) * 1965-06-30 1968-12-03 North American Rockwell Single crystal silicon on spinel insulators
US3655439A (en) * 1968-06-19 1972-04-11 Siemens Ag Method of producing thin layer components with at least one insulating intermediate layer
JPS5012970A (en) * 1973-05-25 1975-02-10

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3414434A (en) * 1965-06-30 1968-12-03 North American Rockwell Single crystal silicon on spinel insulators
US3655439A (en) * 1968-06-19 1972-04-11 Siemens Ag Method of producing thin layer components with at least one insulating intermediate layer
JPS5012970A (en) * 1973-05-25 1975-02-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194530A (en) * 1984-03-16 1985-10-03 Toshiba Corp Manufacture of semiconductor device
JPH0940427A (en) * 1995-07-26 1997-02-10 Agency Of Ind Science & Technol Compound metal oxide film
JP2016146495A (en) * 2010-03-18 2016-08-12 株式会社リコー Coating liquid for forming insulator film, insulator film, manufacturing method for insulator film, and manufacturing method for semiconductor device

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