CH541989A - Verfahren und Vorrichtung zum Herstellen von Einkristallstäben aus halbleitenden Verbindungen - Google Patents

Verfahren und Vorrichtung zum Herstellen von Einkristallstäben aus halbleitenden Verbindungen

Info

Publication number
CH541989A
CH541989A CH393770A CH393770A CH541989A CH 541989 A CH541989 A CH 541989A CH 393770 A CH393770 A CH 393770A CH 393770 A CH393770 A CH 393770A CH 541989 A CH541989 A CH 541989A
Authority
CH
Switzerland
Prior art keywords
production
single crystal
crystal rods
semiconducting compounds
semiconducting
Prior art date
Application number
CH393770A
Other languages
English (en)
Inventor
Josef Dr Grabmaier
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691913682 external-priority patent/DE1913682C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH541989A publication Critical patent/CH541989A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C2208/00—Plastics; Synthetic resins, e.g. rubbers
    • F16C2208/80—Thermosetting resins
    • F16C2208/90—Phenolic resin
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
CH393770A 1969-03-18 1970-03-17 Verfahren und Vorrichtung zum Herstellen von Einkristallstäben aus halbleitenden Verbindungen CH541989A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691913682 DE1913682C3 (de) 1969-03-18 Vorrichtung zum Herstellen von Einkristallen aus halbleitenden Verbindungen

Publications (1)

Publication Number Publication Date
CH541989A true CH541989A (de) 1973-09-30

Family

ID=5728503

Family Applications (1)

Application Number Title Priority Date Filing Date
CH393770A CH541989A (de) 1969-03-18 1970-03-17 Verfahren und Vorrichtung zum Herstellen von Einkristallstäben aus halbleitenden Verbindungen

Country Status (8)

Country Link
US (1) US3716345A (de)
AT (1) AT323236B (de)
CA (1) CA933070A (de)
CH (1) CH541989A (de)
FR (1) FR2039601A5 (de)
GB (1) GB1243930A (de)
NL (1) NL6917398A (de)
SE (1) SE363244B (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915656A (en) * 1971-06-01 1975-10-28 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
DE2259353C3 (de) * 1972-12-04 1975-07-10 Heraeus-Quarzschmelze Gmbh, 6450 Hanau Tiegel aus Quarzglas oder Quarzgut zur Verwendung beim Züchten von Einkristallen
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
JPS545798B2 (de) * 1973-02-12 1979-03-20
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
DK371977A (da) * 1977-08-22 1979-02-23 Topsil As Fremgangsmaade og apparat til raffinering af halvledermateriale
DE3005492C2 (de) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski
DE3466785D1 (en) * 1983-08-06 1987-11-19 Sumitomo Electric Industries Apparatus for the growth of single crystals
DE3472577D1 (en) * 1983-08-31 1988-08-11 Japan Res Dev Corp Apparatus for growing single crystals of dissociative compounds
JPS60112695A (ja) * 1983-11-22 1985-06-19 Sumitomo Electric Ind Ltd 化合物単結晶の引上方法
JPS60251191A (ja) * 1984-05-25 1985-12-11 Res Dev Corp Of Japan 高解離圧化合物単結晶成長方法
EP0186213B1 (de) * 1984-12-28 1990-05-02 Sumitomo Electric Industries Limited Verfahren zur Herstellung von Polykristallen von Halbleiterverbindungen und Vorrichtung zu dessen Durchführung
JPS623096A (ja) * 1985-06-27 1987-01-09 Res Dev Corp Of Japan 高解離圧化合物半導体単結晶成長方法
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
GB8718643D0 (en) * 1987-08-06 1987-09-09 Atomic Energy Authority Uk Single crystal pulling
JPH01192789A (ja) * 1988-01-27 1989-08-02 Toshiba Corp 結晶引上げ装置及び結晶引上げ方法
JP2755588B2 (ja) * 1988-02-22 1998-05-20 株式会社東芝 結晶引上げ方法
US5047112A (en) * 1990-08-14 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Method for preparing homogeneous single crystal ternary III-V alloys
CA2083858C (en) * 1992-01-30 1997-10-14 James William Fleming, Jr. Iridium fiber draw induction furnace
US6059876A (en) * 1997-02-06 2000-05-09 William H. Robinson Method and apparatus for growing crystals
DE19753477A1 (de) * 1997-12-02 1999-06-10 Wacker Siltronic Halbleitermat Verfahren und Heizvorrichtung zum Aufschmelzen von Halbleitermaterial
WO2006028868A2 (en) 2004-09-01 2006-03-16 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
DE102006050901A1 (de) * 2005-11-17 2007-05-31 Solarworld Industries Deutschland Gmbh Verfahren zum Herstellen eines Halbleiterkörpers und zum Herstellen einer Halbleitervorrichtung
US8114218B2 (en) * 2008-09-02 2012-02-14 Siemens Medical Solutions Usa, Inc. Crucible for a crystal pulling apparatus
DE102011089501B4 (de) * 2011-12-21 2013-10-10 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zum Verdampfen von Material aus einer Metallschmelze
WO2019079879A1 (en) 2017-10-27 2019-05-02 Kevin Allan Dooley Inc. SYSTEM AND METHOD FOR PRODUCING HIGH-PURITY SILICON

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
NL121446C (de) * 1958-11-17
US3088853A (en) * 1959-11-17 1963-05-07 Texas Instruments Inc Method of purifying gallium by recrystallization
US3198606A (en) * 1961-01-23 1965-08-03 Ibm Apparatus for growing crystals
BE626374A (de) * 1961-12-22

Also Published As

Publication number Publication date
GB1243930A (en) 1971-08-25
SE363244B (de) 1974-01-14
CA933070A (en) 1973-09-04
US3716345A (en) 1973-02-13
NL6917398A (de) 1970-09-22
FR2039601A5 (de) 1971-01-15
DE1913682A1 (de) 1970-10-15
AT323236B (de) 1975-06-25
DE1913682B2 (de) 1975-07-03

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