AT294919B - Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht - Google Patents

Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht

Info

Publication number
AT294919B
AT294919B AT571969A AT571969A AT294919B AT 294919 B AT294919 B AT 294919B AT 571969 A AT571969 A AT 571969A AT 571969 A AT571969 A AT 571969A AT 294919 B AT294919 B AT 294919B
Authority
AT
Austria
Prior art keywords
intermediate layer
semiconductor thin
spinel type
insulating intermediate
producing semiconductor
Prior art date
Application number
AT571969A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681769627 external-priority patent/DE1769627C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT294919B publication Critical patent/AT294919B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/026—Solid phase epitaxial growth through a disordered intermediate layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • H10P14/6334—
    • H10P14/6544—
    • H10P14/69391—
    • H10P14/69394—
    • H10P14/69397—
    • H10W10/018—
    • H10W10/10—
    • H10W74/43—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Weting (AREA)
AT571969A 1968-06-19 1969-06-17 Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht AT294919B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769627 DE1769627C3 (de) 1968-06-19 Verfahren zum Herstellen von mehrschichtigem, durch mindestens eine Isolierschicht getrenntem Halbleitermaterial

Publications (1)

Publication Number Publication Date
AT294919B true AT294919B (de) 1971-12-10

Family

ID=5700213

Family Applications (1)

Application Number Title Priority Date Filing Date
AT571969A AT294919B (de) 1968-06-19 1969-06-17 Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht

Country Status (8)

Country Link
US (1) US3655439A (cg-RX-API-DMAC10.html)
JP (1) JPS4923621B1 (cg-RX-API-DMAC10.html)
AT (1) AT294919B (cg-RX-API-DMAC10.html)
CH (1) CH501315A (cg-RX-API-DMAC10.html)
FR (1) FR1597033A (cg-RX-API-DMAC10.html)
GB (1) GB1222923A (cg-RX-API-DMAC10.html)
NL (1) NL6909050A (cg-RX-API-DMAC10.html)
SE (1) SE344384B (cg-RX-API-DMAC10.html)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177321A (en) * 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
US3956034A (en) * 1973-07-19 1976-05-11 Harris Corporation Isolated photodiode array
JPS5057381A (cg-RX-API-DMAC10.html) * 1973-09-19 1975-05-19
JPS52120216U (cg-RX-API-DMAC10.html) * 1976-03-11 1977-09-12
JPS52140541U (cg-RX-API-DMAC10.html) * 1976-04-19 1977-10-25
JPS5399730U (cg-RX-API-DMAC10.html) * 1977-01-17 1978-08-12
US4147584A (en) * 1977-12-27 1979-04-03 Burroughs Corporation Method for providing low cost wafers for use as substrates for integrated circuits
JPS5587424A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Semiconductor device
JPS55138229A (en) * 1979-04-13 1980-10-28 Hitachi Ltd Manufacture of dielectric material for insulation- separation substrate
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
DE3072028D1 (en) * 1979-11-23 1987-10-15 Alcatel Nv Dielectrically insulated semiconductor component and process for its manufacture
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
JPS57169246A (en) * 1981-04-10 1982-10-18 Nec Corp Dielectric epitaxial film material
JPS57211267A (en) * 1981-06-22 1982-12-25 Toshiba Corp Semiconductor device and manufacture thereof
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
JPS60202952A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 半導体装置の製造方法
US5264072A (en) * 1985-12-04 1993-11-23 Fujitsu Limited Method for recrystallizing conductive films by an indirect-heating with a thermal-conduction-controlling layer
US5363799A (en) * 1987-08-08 1994-11-15 Canon Kabushiki Kaisha Method for growth of crystal
US5190613A (en) * 1988-10-02 1993-03-02 Canon Kabushiki Kaisha Method for forming crystals
WO1999005728A1 (fr) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Dispositif a semi-conducteur en nitrure
DE19802131B4 (de) * 1998-01-21 2007-03-15 Robert Bosch Gmbh Verfahren zur Herstellung einer monokristallinen Schicht aus einem leitenden oder halbleitenden Material
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (en) * 1999-03-04 2009-12-16 Nichia Corporation Nitride semiconductor laser device
US6839362B2 (en) 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US6844084B2 (en) 2002-04-03 2005-01-18 Saint-Gobain Ceramics & Plastics, Inc. Spinel substrate and heteroepitaxial growth of III-V materials thereon
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US20090283092A1 (en) * 2008-05-13 2009-11-19 Mel Marrone Firelog Pan

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972555A (en) * 1958-11-07 1961-02-21 Union Carbide Corp Gas plating of alumina
US3399072A (en) * 1963-03-04 1968-08-27 North American Rockwell Magnetic materials
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
DE1544261C3 (de) * 1965-03-30 1975-12-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials
US3414434A (en) * 1965-06-30 1968-12-03 North American Rockwell Single crystal silicon on spinel insulators

Also Published As

Publication number Publication date
FR1597033A (cg-RX-API-DMAC10.html) 1970-06-22
DE1769627B2 (de) 1977-03-31
US3655439A (en) 1972-04-11
DE1769627A1 (de) 1971-10-21
SE344384B (cg-RX-API-DMAC10.html) 1972-04-10
JPS4923621B1 (cg-RX-API-DMAC10.html) 1974-06-17
GB1222923A (en) 1971-02-17
NL6909050A (cg-RX-API-DMAC10.html) 1969-12-23
CH501315A (de) 1970-12-31

Similar Documents

Publication Publication Date Title
AT294919B (de) Verfahren zum Herstellen von Halbleiter-Dünnschichtbauelementen mit mindestens einer nach dem Spinelltyp kristallisierenden isolierenden Zwischenschicht
CH463752A (de) Verfahren zum Herstellen einer Verbund-Bauplatte, sowie nach dem Verfahren hergestellte Verbund-Bauplatte
AT293025B (de) Verfahren zur Herstellung von Flächengebilden nach dem Isocyanat-Polyadditionsverfahren
CH522955A (de) Verfahren zur Herstellung einer Halbleitervorrichtung sowie nach dem Verfahren hergestellte Halbleitervorrichtung
AT278906B (de) Verfahren zum Herstellen von Halbleiterbauelementen mit Kontakten
CH498493A (de) Verfahren zum Herstellen monolithischer Halbleiteranordnungen
AT312909B (de) Vorrichtung zur Herstellung von wenigstens teilweise mit einer Hülle versehenen Dichtungsstreifen
CH510937A (de) Verfahren zum Herstellen einer Isolierschicht auf der Oberfläche eines Halbleiterkristalls
AT321991B (de) Verfahren zum herstellen eines halbleiterbauelementes mit einer schottky-sperrschicht
AT256940B (de) Verfahren zum Herstellen einer epitaktischen, kristallinen Schicht, insbesondere Halbleiterschicht
DE1800347B2 (de) Verfahren zum herstellen einer halbleiteranordnung
CH523524A (de) Vorrichtung zum Aufladen einer isolierenden Schicht
AT348474B (de) Vorrichtung zum aufbringen einer ebenen schicht
AT261003B (de) Verfahren zum Herstellen von homogenen Oxydschichten auf Halbleiterkristallen
CH451886A (de) Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht
CH458299A (de) Verfahren zum Herstellen einer einkristallinen Halbleiterschicht
CH483727A (de) Halbleiterelement mit mindestens einer Steuerelektrode
IT964953B (it) Metodo per il miglioramento del terreno
AT285298B (de) Verfahren zum Herstellen von Kegelzahnrädern durch Kaltumformung
AT307506B (de) Verfahren zum Herstellen epitaktischer Halbleiterschichten auf Fremdsubstraten
CH512821A (de) Verfahren zur Herstellung eines Halbleiterelementes, und nach dem Verfahren hergestelltes Halbleiterelement
AT273230B (de) Verfahren zum Bedecken von Substraten durch Bedampfen
AT303759B (de) Verfahren zur Herstellung von Organosilicium-Verbindungen mit mindestens einer Silicium-Kohlenstoff-Bindung
AT318525B (de) Verfahren zum Herstellen von Skikanten mit L-förmigem Querschnitt
DE1921614B2 (de) Verfahren zum herstellen einer halbleiteranordnung mit gewuenschter duechbruchsspannung

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee