CH483727A - Halbleiterelement mit mindestens einer Steuerelektrode - Google Patents
Halbleiterelement mit mindestens einer SteuerelektrodeInfo
- Publication number
- CH483727A CH483727A CH431569A CH431569A CH483727A CH 483727 A CH483727 A CH 483727A CH 431569 A CH431569 A CH 431569A CH 431569 A CH431569 A CH 431569A CH 483727 A CH483727 A CH 483727A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor element
- control electrode
- electrode
- control
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH431569A CH483727A (de) | 1969-03-21 | 1969-03-21 | Halbleiterelement mit mindestens einer Steuerelektrode |
DE19702013228 DE2013228A1 (de) | 1969-03-21 | 1970-03-19 | Halbleiterelement mit mindestens einer Steuerelektrode |
GB03190/70A GB1276285A (en) | 1969-03-21 | 1970-03-19 | Improvements in or relating to semiconductor elements |
US21067A US3644799A (en) | 1969-03-21 | 1970-03-19 | Semiconductor element having at least one control electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH431569A CH483727A (de) | 1969-03-21 | 1969-03-21 | Halbleiterelement mit mindestens einer Steuerelektrode |
Publications (1)
Publication Number | Publication Date |
---|---|
CH483727A true CH483727A (de) | 1969-12-31 |
Family
ID=4273781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH431569A CH483727A (de) | 1969-03-21 | 1969-03-21 | Halbleiterelement mit mindestens einer Steuerelektrode |
Country Status (4)
Country | Link |
---|---|
US (1) | US3644799A (de) |
CH (1) | CH483727A (de) |
DE (1) | DE2013228A1 (de) |
GB (1) | GB1276285A (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2019251A1 (de) * | 1970-04-21 | 1971-11-04 | Siemens Ag | Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen Halbleiterkoerper |
US4005451A (en) * | 1975-05-05 | 1977-01-25 | Rca Corporation | Lateral current device |
US4611222A (en) * | 1979-10-12 | 1986-09-09 | Westinghouse Electric Corp. | Solid-state switch |
CN101672887B (zh) * | 2008-09-12 | 2013-01-09 | 上海宝冶建设有限公司 | 大功率晶闸管变流组件性能的预防检测方法 |
CN106711203B (zh) * | 2015-11-12 | 2020-03-27 | 旺宏电子股份有限公司 | 半导体元件及其制造方法 |
US9735291B1 (en) * | 2016-03-10 | 2017-08-15 | Macronix International Co., Ltd. | Semiconductor device and Zener diode |
-
1969
- 1969-03-21 CH CH431569A patent/CH483727A/de not_active IP Right Cessation
-
1970
- 1970-03-19 GB GB03190/70A patent/GB1276285A/en not_active Expired
- 1970-03-19 DE DE19702013228 patent/DE2013228A1/de active Pending
- 1970-03-19 US US21067A patent/US3644799A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2013228A1 (de) | 1970-10-01 |
US3644799A (en) | 1972-02-22 |
GB1276285A (en) | 1972-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |