CH483727A - Halbleiterelement mit mindestens einer Steuerelektrode - Google Patents

Halbleiterelement mit mindestens einer Steuerelektrode

Info

Publication number
CH483727A
CH483727A CH431569A CH431569A CH483727A CH 483727 A CH483727 A CH 483727A CH 431569 A CH431569 A CH 431569A CH 431569 A CH431569 A CH 431569A CH 483727 A CH483727 A CH 483727A
Authority
CH
Switzerland
Prior art keywords
semiconductor element
control electrode
electrode
control
semiconductor
Prior art date
Application number
CH431569A
Other languages
English (en)
Inventor
Erich Dr Weisshaar
Original Assignee
Transistor Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Transistor Ag filed Critical Transistor Ag
Priority to CH431569A priority Critical patent/CH483727A/de
Publication of CH483727A publication Critical patent/CH483727A/de
Priority to DE19702013228 priority patent/DE2013228A1/de
Priority to US21067A priority patent/US3644799A/en
Priority to GB03190/70A priority patent/GB1276285A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CH431569A 1969-03-21 1969-03-21 Halbleiterelement mit mindestens einer Steuerelektrode CH483727A (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CH431569A CH483727A (de) 1969-03-21 1969-03-21 Halbleiterelement mit mindestens einer Steuerelektrode
DE19702013228 DE2013228A1 (de) 1969-03-21 1970-03-19 Halbleiterelement mit mindestens einer Steuerelektrode
US21067A US3644799A (en) 1969-03-21 1970-03-19 Semiconductor element having at least one control electrode
GB03190/70A GB1276285A (en) 1969-03-21 1970-03-19 Improvements in or relating to semiconductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH431569A CH483727A (de) 1969-03-21 1969-03-21 Halbleiterelement mit mindestens einer Steuerelektrode

Publications (1)

Publication Number Publication Date
CH483727A true CH483727A (de) 1969-12-31

Family

ID=4273781

Family Applications (1)

Application Number Title Priority Date Filing Date
CH431569A CH483727A (de) 1969-03-21 1969-03-21 Halbleiterelement mit mindestens einer Steuerelektrode

Country Status (4)

Country Link
US (1) US3644799A (de)
CH (1) CH483727A (de)
DE (1) DE2013228A1 (de)
GB (1) GB1276285A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2019251A1 (de) * 1970-04-21 1971-11-04 Siemens Ag Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen Halbleiterkoerper
US4005451A (en) * 1975-05-05 1977-01-25 Rca Corporation Lateral current device
US4611222A (en) * 1979-10-12 1986-09-09 Westinghouse Electric Corp. Solid-state switch
CN101672887B (zh) * 2008-09-12 2013-01-09 上海宝冶建设有限公司 大功率晶闸管变流组件性能的预防检测方法
CN106711203B (zh) * 2015-11-12 2020-03-27 旺宏电子股份有限公司 半导体元件及其制造方法
US9735291B1 (en) * 2016-03-10 2017-08-15 Macronix International Co., Ltd. Semiconductor device and Zener diode

Also Published As

Publication number Publication date
GB1276285A (en) 1972-06-01
US3644799A (en) 1972-02-22
DE2013228A1 (de) 1970-10-01

Similar Documents

Publication Publication Date Title
CH517304A (fr) Electrode potentiométrique
CH550487A (de) Schaltungsanordnung mit mindestens einem mit hilfe von strahlung gespeisten schaltungselement.
CH475653A (de) Feldeffekttransistor mit mindestens einer isolierten Torelektrode
AT263941B (de) Halbleiterbauelement mit mindestens einem Druckkontaktübergang
CH457782A (de) Fassung mit mindestens einer aus Glaselementen bestehenden Einbaueinheit
CH485924A (fr) Elément de construction
CH483727A (de) Halbleiterelement mit mindestens einer Steuerelektrode
CH458689A (fr) Elément de construction de toiture
AT267218B (de) Photometer mit mindestens einer Durchflußküvette
CH470550A (fr) Elément de construction
CH444316A (de) Halbleiter-Bauelement mit einer Flächenhalbleiteranordnung
CH485079A (fr) Elément de construction
CH437537A (de) Stromtor mit einer Feldelektrode
CH478326A (de) Fassung mit wenigstens einer Einbaueinheit
CH487503A (de) Halbleiterbauteil mit vorgespannt eingebautem Halbleiterelement
AT305374B (de) Feldeffekttransistor mit mindestens einer isolierten Steuerelektrode
CH492909A (de) Steuerschieber mit drei Anschlüssen
AT295658B (de) Halbleiteranordnung mit mindestens zwei temperaturabhängigen Widerstandselementen
AT330413B (de) Steuergerat mit mindestens einem steuerbaren leistungshalbleiter
AT285134B (de) Vorgearbeitetes Dachelement
CH497057A (de) Schaltanlage mit mindestens einem verschiebbaren Schaltgerät
AT291393B (de) Halbleiterelement mit hoher Spperspannung
CH512014A (de) Schaltanordnung mit mindestens einem Schaltelement
CH531743A (de) Regeleinrichtung mit mindestens einem Stellglied
CH522960A (de) Halbleiteranordnung mit wenigstens einer Isolationsschicht

Legal Events

Date Code Title Description
PL Patent ceased