CH475653A - Feldeffekttransistor mit mindestens einer isolierten Torelektrode - Google Patents

Feldeffekttransistor mit mindestens einer isolierten Torelektrode

Info

Publication number
CH475653A
CH475653A CH436667A CH436667A CH475653A CH 475653 A CH475653 A CH 475653A CH 436667 A CH436667 A CH 436667A CH 436667 A CH436667 A CH 436667A CH 475653 A CH475653 A CH 475653A
Authority
CH
Switzerland
Prior art keywords
gate electrode
field effect
effect transistor
insulated gate
insulated
Prior art date
Application number
CH436667A
Other languages
English (en)
Inventor
Okumura Tomisaburo
Tsuchitani Akira
Hasegawa Toshio
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of CH475653A publication Critical patent/CH475653A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
CH436667A 1966-03-29 1967-03-29 Feldeffekttransistor mit mindestens einer isolierten Torelektrode CH475653A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021266 1966-03-29

Publications (1)

Publication Number Publication Date
CH475653A true CH475653A (de) 1969-07-15

Family

ID=12020842

Family Applications (1)

Application Number Title Priority Date Filing Date
CH436667A CH475653A (de) 1966-03-29 1967-03-29 Feldeffekttransistor mit mindestens einer isolierten Torelektrode

Country Status (8)

Country Link
US (1) US3764864A (de)
BE (1) BE696173A (de)
CH (1) CH475653A (de)
DE (1) DE1614145A1 (de)
FR (1) FR1517240A (de)
GB (1) GB1186421A (de)
NL (1) NL150950B (de)
SE (1) SE307198B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882529A (en) * 1967-10-06 1975-05-06 Texas Instruments Inc Punch-through semiconductor diodes
DE1919406C3 (de) * 1968-04-23 1981-11-05 Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven Feldeffekttransistor und seine Verwendung in einer Schaltungsanordnung für einen Miller-Integrator
US3518750A (en) * 1968-10-02 1970-07-07 Nat Semiconductor Corp Method of manufacturing a misfet
NL162792C (nl) * 1969-03-01 1980-06-16 Philips Nv Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.
NL161924C (nl) * 1969-07-03 1980-03-17 Philips Nv Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
DE2109915A1 (de) * 1971-03-02 1972-09-07 Ibm Deutschland Oberflächengesteuerte Halbleiteranordnung
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
US4264857A (en) * 1978-06-30 1981-04-28 International Business Machines Corporation Constant voltage threshold device
US4698653A (en) * 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
BE1007672A3 (nl) * 1993-10-27 1995-09-12 Philips Electronics Nv Hoogfrequent halfgeleiderinrichting met beveiligingsinrichting.
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US8476684B2 (en) * 2010-09-29 2013-07-02 Analog Devices, Inc. Field effect transistors having improved breakdown voltages and methods of forming the same
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8803193B2 (en) 2011-05-11 2014-08-12 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US8816389B2 (en) 2011-10-21 2014-08-26 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE632998A (de) * 1962-05-31
NL298671A (de) * 1963-10-01
US3278853A (en) * 1963-11-21 1966-10-11 Westinghouse Electric Corp Integrated circuits with field effect transistors and diode bias means
US3408543A (en) * 1964-06-01 1968-10-29 Hitachi Ltd Combination capacitor and fieldeffect transistor
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3313958A (en) * 1965-09-03 1967-04-11 Gen Dynamics Corp Gate circuitry utilizing mos type field effect transistors
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3440503A (en) * 1967-05-31 1969-04-22 Westinghouse Electric Corp Integrated complementary mos-type transistor structure and method of making same

Also Published As

Publication number Publication date
FR1517240A (fr) 1968-03-15
NL150950B (nl) 1976-09-15
DE1614145B2 (de) 1970-10-29
DE1614145A1 (de) 1970-06-25
GB1186421A (en) 1970-04-02
NL6704262A (de) 1967-10-02
US3764864A (en) 1973-10-09
BE696173A (de) 1967-09-01
SE307198B (de) 1968-12-23

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Legal Events

Date Code Title Description
PL Patent ceased