CH466872A - Feldeffekttransistor mit isolierter Torelektrode - Google Patents

Feldeffekttransistor mit isolierter Torelektrode

Info

Publication number
CH466872A
CH466872A CH1743367A CH1743367A CH466872A CH 466872 A CH466872 A CH 466872A CH 1743367 A CH1743367 A CH 1743367A CH 1743367 A CH1743367 A CH 1743367A CH 466872 A CH466872 A CH 466872A
Authority
CH
Switzerland
Prior art keywords
gate electrode
field effect
effect transistor
insulated gate
insulated
Prior art date
Application number
CH1743367A
Other languages
English (en)
Inventor
Behari Das Mukunda
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH466872A publication Critical patent/CH466872A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
CH1743367A 1966-12-13 1967-12-11 Feldeffekttransistor mit isolierter Torelektrode CH466872A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB55813/66A GB1173150A (en) 1966-12-13 1966-12-13 Improvements in Insulated Gate Field Effect Transistors

Publications (1)

Publication Number Publication Date
CH466872A true CH466872A (de) 1968-12-31

Family

ID=10474958

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1743367A CH466872A (de) 1966-12-13 1967-12-11 Feldeffekttransistor mit isolierter Torelektrode

Country Status (9)

Country Link
US (1) US3631310A (de)
BE (1) BE707821A (de)
CH (1) CH466872A (de)
DE (1) DE1614300C3 (de)
DK (1) DK116803B (de)
ES (1) ES348128A1 (de)
GB (1) GB1173150A (de)
NL (1) NL158657B (de)
SE (1) SE340131B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2000093A1 (de) * 1970-01-02 1971-07-08 Heinz Dr Rer Nat Prof Beneking Feldeffekttransistor
US3766446A (en) * 1969-11-20 1973-10-16 Kogyo Gijutsuin Integrated circuits comprising lateral transistors and process for fabrication thereof

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1316555A (de) * 1969-08-12 1973-05-09
US3988761A (en) * 1970-02-06 1976-10-26 Sony Corporation Field-effect transistor and method of making the same
JPS4936515B1 (de) * 1970-06-10 1974-10-01
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5123432B2 (de) * 1971-08-26 1976-07-16
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor
DE2729657A1 (de) * 1977-06-30 1979-01-11 Siemens Ag Feldeffekttransistor mit extrem kurzer kanallaenge
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
JPS54125986A (en) * 1978-03-23 1979-09-29 Handotai Kenkyu Shinkokai Semiconductor including insulated gate type transistor
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
GB2150348A (en) * 1983-11-29 1985-06-26 Philips Electronic Associated Insulated-gate field-effect transistors and their manufacture
US6312997B1 (en) * 1998-08-12 2001-11-06 Micron Technology, Inc. Low voltage high performance semiconductor devices and methods
US6777746B2 (en) * 2002-03-27 2004-08-17 Kabushiki Kaisha Toshiba Field effect transistor and application device thereof
JP3944461B2 (ja) * 2002-03-27 2007-07-11 株式会社東芝 電界効果型トランジスタおよびその応用装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
NL265382A (de) * 1960-03-08
NL267831A (de) * 1960-08-17
FR1399362A (fr) * 1963-06-24 1965-05-14 Hitachi Ltd Elément semi-conducteur à effet de champ
GB1071383A (en) * 1963-06-24 1967-06-07 Hitachi Ltd Field-effect semiconductor devices
FR1435488A (fr) * 1964-06-01 1966-04-15 Rca Corp Transistors à effets de champ et à porte isolée
FR1443781A (fr) * 1964-08-17 1966-06-24 Motorola Inc Procédé pour la fabrication de semi-conducteurs et cache photographique pour cette fabrication
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3456168A (en) * 1965-02-19 1969-07-15 United Aircraft Corp Structure and method for production of narrow doped region semiconductor devices
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3766446A (en) * 1969-11-20 1973-10-16 Kogyo Gijutsuin Integrated circuits comprising lateral transistors and process for fabrication thereof
DE2000093A1 (de) * 1970-01-02 1971-07-08 Heinz Dr Rer Nat Prof Beneking Feldeffekttransistor

Also Published As

Publication number Publication date
GB1173150A (en) 1969-12-03
BE707821A (de) 1968-06-11
DK116803B (da) 1970-02-16
DE1614300A1 (de) 1970-07-09
DE1614300B2 (de) 1974-10-10
SE340131B (de) 1971-11-08
NL158657B (nl) 1978-11-15
ES348128A1 (es) 1969-03-16
NL6716683A (de) 1968-06-14
DE1614300C3 (de) 1982-02-11
US3631310A (en) 1971-12-28

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