CH514937A - Halbleiteranordnung mit einem Feldeffekttransistor mit isolierter Torelektrode - Google Patents
Halbleiteranordnung mit einem Feldeffekttransistor mit isolierter TorelektrodeInfo
- Publication number
- CH514937A CH514937A CH957070A CH957070A CH514937A CH 514937 A CH514937 A CH 514937A CH 957070 A CH957070 A CH 957070A CH 957070 A CH957070 A CH 957070A CH 514937 A CH514937 A CH 514937A
- Authority
- CH
- Switzerland
- Prior art keywords
- gate electrode
- field effect
- effect transistor
- insulated gate
- semiconductor arrangement
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6909788A NL165005C (nl) | 1969-06-26 | 1969-06-26 | Halfgeleiderinrichting bevattende veldeffecttransistors met geisoleerde stuurelektrode en werkwijze voor het vervaardigen van de halfgeleiderinrichting. |
Publications (1)
Publication Number | Publication Date |
---|---|
CH514937A true CH514937A (de) | 1971-10-31 |
Family
ID=19807307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH957070A CH514937A (de) | 1969-06-26 | 1970-06-23 | Halbleiteranordnung mit einem Feldeffekttransistor mit isolierter Torelektrode |
Country Status (8)
Country | Link |
---|---|
AT (1) | AT336080B (de) |
BE (1) | BE752480A (de) |
CH (1) | CH514937A (de) |
DE (1) | DE2029058C2 (de) |
FR (1) | FR2047958B1 (de) |
GB (1) | GB1325332A (de) |
NL (1) | NL165005C (de) |
SE (1) | SE365905B (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5528229B1 (de) * | 1971-03-19 | 1980-07-26 | ||
US3728161A (en) * | 1971-12-28 | 1973-04-17 | Bell Telephone Labor Inc | Integrated circuits with ion implanted chan stops |
JPS559834B2 (de) * | 1972-03-31 | 1980-03-12 | ||
JPS551189A (en) * | 1979-05-07 | 1980-01-07 | Nec Corp | Semiconductor device |
JPS55102274A (en) * | 1980-01-25 | 1980-08-05 | Agency Of Ind Science & Technol | Insulated gate field effect transistor |
GB2123605A (en) * | 1982-06-22 | 1984-02-01 | Standard Microsyst Smc | MOS integrated circuit structure and method for its fabrication |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE636316A (de) * | 1962-08-23 | 1900-01-01 | ||
US3400383A (en) * | 1964-08-05 | 1968-09-03 | Texas Instruments Inc | Trainable decision system and adaptive memory element |
US3417464A (en) * | 1965-05-21 | 1968-12-24 | Ibm | Method for fabricating insulated-gate field-effect transistors |
GB1145092A (en) * | 1965-06-09 | 1969-03-12 | Mullard Ltd | Improvements in insulated gate field effect semiconductor devices |
GB1155578A (en) * | 1965-10-08 | 1969-06-18 | Sony Corp | Field Effect Transistor |
US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
GB1131675A (en) * | 1966-07-11 | 1968-10-23 | Hitachi Ltd | Semiconductor device |
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
GB1203298A (en) * | 1967-01-10 | 1970-08-26 | Hewlett Packard Co | Mis integrated circuit and method of fabricating the same |
-
1969
- 1969-06-26 NL NL6909788A patent/NL165005C/xx not_active IP Right Cessation
-
1970
- 1970-06-12 DE DE19702029058 patent/DE2029058C2/de not_active Expired
- 1970-06-23 GB GB3046370A patent/GB1325332A/en not_active Expired
- 1970-06-23 CH CH957070A patent/CH514937A/de not_active IP Right Cessation
- 1970-06-23 SE SE868970A patent/SE365905B/xx unknown
- 1970-06-23 AT AT564470A patent/AT336080B/de active
- 1970-06-24 BE BE752480D patent/BE752480A/xx not_active IP Right Cessation
- 1970-06-25 FR FR7023553A patent/FR2047958B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2029058C2 (de) | 1983-06-23 |
NL6909788A (de) | 1970-12-29 |
NL165005B (nl) | 1980-09-15 |
BE752480A (fr) | 1970-12-24 |
AT336080B (de) | 1977-04-12 |
FR2047958B1 (de) | 1975-09-26 |
FR2047958A1 (de) | 1971-03-19 |
NL165005C (nl) | 1981-02-16 |
ATA564470A (de) | 1976-08-15 |
GB1325332A (en) | 1973-08-01 |
SE365905B (de) | 1974-04-01 |
DE2029058A1 (de) | 1971-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH535495A (de) | Feldeffektspeichertransistor mit isolierter Gate-Elektrode | |
AT320023B (de) | Feldeffekttransistor mit isolierter Torelektrode | |
CH480735A (de) | Feldeffekttransistor mit isolierten Torelektroden | |
DK119016B (da) | Felteffekttransistor med isoleret styreelektrode. | |
NL152707B (nl) | Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan. | |
CH466872A (de) | Feldeffekttransistor mit isolierter Torelektrode | |
MY7300263A (en) | Insulated gate field effect transistor | |
NL144091B (nl) | Halfgeleiderveldeffectinrichting van het type met een geisoleerde poortelektrode. | |
NL150950B (nl) | Veldeffecttransistor met geisoleerde stuurelektrode. | |
AT289198B (de) | Verstärkerschaltung mit einem Feldeffekttransistor | |
CH505475A (de) | Halbleitervorrichtung mit einem lateralen Transistor | |
NL152708B (nl) | Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode. | |
CH470762A (de) | Feldeffekttransistor mit isolierter Torelektrode | |
AT315240B (de) | Feldeffekttransistor mit isolierter Torelektrode | |
CH514937A (de) | Halbleiteranordnung mit einem Feldeffekttransistor mit isolierter Torelektrode | |
AT288489B (de) | Verstärkerschaltung mit einem Feldeffekttransistor | |
CH478461A (de) | Feldeffekttransistor mit einem Halbleiterkörper | |
AT331859B (de) | Feldeffekttransistor mit isolierter torelektrode | |
AT303819B (de) | Schutzvorrichtung für einen Feldeffekttransistor mit isolierter Torelektrode | |
CH476399A (de) | Feldeffekttransistor mit mehreren isolierten Torelektroden | |
AT320741B (de) | Halbleiterbauelement mit Feldeffekttransistor | |
BE755991A (fr) | Circuit a transistors a courbe caracteristique amelioree | |
AT303420B (de) | Elektrische Speicheranordnung mit einem Feldeffekttransistor | |
NL143370B (nl) | Veldeffecttransistor met geisoleerde poortelektrode. | |
AT290622B (de) | Feldeffekttransistor mit isolierter Torelektrode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |