CH470762A - Feldeffekttransistor mit isolierter Torelektrode - Google Patents

Feldeffekttransistor mit isolierter Torelektrode

Info

Publication number
CH470762A
CH470762A CH238967A CH238967A CH470762A CH 470762 A CH470762 A CH 470762A CH 238967 A CH238967 A CH 238967A CH 238967 A CH238967 A CH 238967A CH 470762 A CH470762 A CH 470762A
Authority
CH
Switzerland
Prior art keywords
gate electrode
field effect
effect transistor
insulated gate
insulated
Prior art date
Application number
CH238967A
Other languages
English (en)
Inventor
Robert Beale Julian
Francis Bear Andrew
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH470762A publication Critical patent/CH470762A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CH238967A 1966-02-18 1967-02-17 Feldeffekttransistor mit isolierter Torelektrode CH470762A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7254/66A GB1142674A (en) 1966-02-18 1966-02-18 Improvements in and relating to insulated gate field effect transistors

Publications (1)

Publication Number Publication Date
CH470762A true CH470762A (de) 1969-03-31

Family

ID=9829586

Family Applications (1)

Application Number Title Priority Date Filing Date
CH238967A CH470762A (de) 1966-02-18 1967-02-17 Feldeffekttransistor mit isolierter Torelektrode

Country Status (10)

Country Link
US (1) US3449648A (de)
BE (1) BE694247A (de)
CH (1) CH470762A (de)
DE (1) DE1614219A1 (de)
DK (1) DK117441B (de)
ES (1) ES336908A1 (de)
FR (1) FR1511963A (de)
GB (1) GB1142674A (de)
NL (1) NL6702309A (de)
SE (1) SE363931B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3612964A (en) * 1969-01-06 1971-10-12 Mitsubishi Electric Corp Mis-type variable capacitance semiconductor device
US3967305A (en) * 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
FR2092803B1 (de) * 1970-06-19 1974-02-22 Thomson Csf
US3737743A (en) * 1971-12-23 1973-06-05 Gen Electric High power microwave field effect transistor
AT393009B (de) * 1989-11-07 1991-07-25 Poska Albertas Ionas Antanovic Selbsttaetiges ventil
US5258638A (en) * 1992-08-13 1993-11-02 Xerox Corporation Thermal ink jet power MOS device design/layout
JP2003060197A (ja) * 2001-08-09 2003-02-28 Sanyo Electric Co Ltd 半導体装置
GB0709706D0 (en) * 2007-05-21 2007-06-27 Filtronic Compound Semiconduct A field effect transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
US3094633A (en) * 1960-09-29 1963-06-18 Itt Semiconductor multiplanar rectifying junction diode
US3303400A (en) * 1961-07-25 1967-02-07 Fairchild Camera Instr Co Semiconductor device complex
NL282170A (de) * 1961-08-17
US3121177A (en) * 1962-01-23 1964-02-11 Robert H Davis Active thin-film devices controlling current by modulation of a quantum mechanical potential barrier
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3354354A (en) * 1964-03-24 1967-11-21 Rca Corp Oxide bonded semiconductor wafer utilizing intrinsic and degenerate material

Also Published As

Publication number Publication date
US3449648A (en) 1969-06-10
DK117441B (da) 1970-04-27
GB1142674A (en) 1969-02-12
ES336908A1 (es) 1968-06-01
DE1614219A1 (de) 1970-08-13
FR1511963A (fr) 1968-02-02
NL6702309A (de) 1967-08-21
BE694247A (de) 1967-08-17
SE363931B (de) 1974-02-04

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Legal Events

Date Code Title Description
PL Patent ceased