AT320023B - Feldeffekttransistor mit isolierter Torelektrode - Google Patents

Feldeffekttransistor mit isolierter Torelektrode

Info

Publication number
AT320023B
AT320023B AT239269A AT239269A AT320023B AT 320023 B AT320023 B AT 320023B AT 239269 A AT239269 A AT 239269A AT 239269 A AT239269 A AT 239269A AT 320023 B AT320023 B AT 320023B
Authority
AT
Austria
Prior art keywords
gate electrode
field effect
effect transistor
insulated gate
insulated
Prior art date
Application number
AT239269A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT320023B publication Critical patent/AT320023B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
AT239269A 1968-03-11 1969-03-11 Feldeffekttransistor mit isolierter Torelektrode AT320023B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB01844/68A GB1254302A (en) 1968-03-11 1968-03-11 Improvements in insulated gate field effect transistors
GB1184469 1969-02-28

Publications (1)

Publication Number Publication Date
AT320023B true AT320023B (de) 1975-01-27

Family

ID=26248564

Family Applications (1)

Application Number Title Priority Date Filing Date
AT239269A AT320023B (de) 1968-03-11 1969-03-11 Feldeffekttransistor mit isolierter Torelektrode

Country Status (8)

Country Link
US (1) US3586930A (de)
AT (1) AT320023B (de)
BE (1) BE729668A (de)
CH (1) CH508277A (de)
DE (1) DE1913053C3 (de)
FR (1) FR2003655B1 (de)
GB (1) GB1254302A (de)
NL (1) NL6903513A (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2092803B1 (de) * 1970-06-19 1974-02-22 Thomson Csf
GB2049273B (en) * 1979-05-02 1983-05-25 Philips Electronic Associated Method for short-circuting igfet source regions to a substrate
JPS5727070A (en) * 1980-07-25 1982-02-13 Toshiba Corp Mos type semiconductor device
US4462041A (en) * 1981-03-20 1984-07-24 Harris Corporation High speed and current gain insulated gate field effect transistors
US4456888A (en) * 1981-03-26 1984-06-26 Raytheon Company Radio frequency network having plural electrically interconnected field effect transistor cells
JPS57197456A (en) * 1981-05-29 1982-12-03 Toshiba Corp Metallic ion detector
GB2154820B (en) * 1984-01-23 1988-05-25 Int Rectifier Corp Photovoltaic relay
JPH04252036A (ja) * 1991-01-10 1992-09-08 Fujitsu Ltd 半導体装置
US5321291A (en) * 1991-12-16 1994-06-14 Texas Instruments Incorporated Power MOSFET transistor
US5258638A (en) * 1992-08-13 1993-11-02 Xerox Corporation Thermal ink jet power MOS device design/layout
JP3322738B2 (ja) * 1993-12-08 2002-09-09 株式会社半導体エネルギー研究所 半導体装置及び集積回路ならびに表示装置
JPH07183345A (ja) * 1993-12-24 1995-07-21 Nec Corp 半導体装置
JPH08213409A (ja) * 1995-02-06 1996-08-20 Nec Corp 半導体装置
US6313512B1 (en) 1999-02-25 2001-11-06 Tyco Electronics Logistics Ag Low source inductance compact FET topology for power amplifiers
GB9922763D0 (en) * 1999-09-28 1999-11-24 Koninkl Philips Electronics Nv Semiconductor devices
US6642578B1 (en) 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage
US8274265B1 (en) 2007-02-28 2012-09-25 Netlogic Microsystems, Inc. Multi-phase power system with redundancy
US7808223B1 (en) * 2007-05-08 2010-10-05 Netlogic Microsystems, Inc. Transistor with spatially integrated schottky diode
GB0709706D0 (en) * 2007-05-21 2007-06-27 Filtronic Compound Semiconduct A field effect transistor
JP2014229737A (ja) * 2013-05-22 2014-12-08 株式会社東芝 半導体装置
JP2016174240A (ja) 2015-03-16 2016-09-29 株式会社東芝 半導体スイッチ
US10978583B2 (en) 2017-06-21 2021-04-13 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
US10615273B2 (en) 2017-06-21 2020-04-07 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

Also Published As

Publication number Publication date
NL6903513A (de) 1969-09-15
CH508277A (de) 1971-05-31
FR2003655A1 (de) 1969-11-14
BE729668A (de) 1969-09-10
US3586930A (en) 1971-06-22
DE1913053C3 (de) 1979-10-25
FR2003655B1 (de) 1973-10-19
GB1254302A (en) 1971-11-17
DE1913053A1 (de) 1969-12-11
DE1913053B2 (de) 1979-03-01

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee