CH476399A - Feldeffekttransistor mit mehreren isolierten Torelektroden - Google Patents

Feldeffekttransistor mit mehreren isolierten Torelektroden

Info

Publication number
CH476399A
CH476399A CH446567A CH446567A CH476399A CH 476399 A CH476399 A CH 476399A CH 446567 A CH446567 A CH 446567A CH 446567 A CH446567 A CH 446567A CH 476399 A CH476399 A CH 476399A
Authority
CH
Switzerland
Prior art keywords
field effect
effect transistor
gate electrodes
isolated gate
several isolated
Prior art date
Application number
CH446567A
Other languages
English (en)
Inventor
Okumura Tomisaburo
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of CH476399A publication Critical patent/CH476399A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
CH446567A 1966-03-30 1967-03-30 Feldeffekttransistor mit mehreren isolierten Torelektroden CH476399A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2048966 1966-03-30

Publications (1)

Publication Number Publication Date
CH476399A true CH476399A (de) 1969-07-31

Family

ID=12028544

Family Applications (1)

Application Number Title Priority Date Filing Date
CH446567A CH476399A (de) 1966-03-30 1967-03-30 Feldeffekttransistor mit mehreren isolierten Torelektroden

Country Status (7)

Country Link
US (1) US3453506A (de)
BE (1) BE696250A (de)
CH (1) CH476399A (de)
FR (1) FR1517242A (de)
GB (1) GB1132810A (de)
NL (1) NL6704306A (de)
SE (1) SE313879B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2476914A1 (fr) * 1980-02-22 1981-08-28 Rca Corp Dispositif mosfet vertical avec electrode de blindage

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161924C (nl) * 1969-07-03 1980-03-17 Philips Nv Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
US10510600B1 (en) * 2018-07-11 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Shared contact structure and methods for forming the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333115A (en) * 1963-11-20 1967-07-25 Toko Inc Field-effect transistor having plural insulated-gate electrodes that vary space-charge voltage as a function of drain voltage
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor
US3363166A (en) * 1965-04-03 1968-01-09 Hitachi Ltd Semiconductor modulator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2476914A1 (fr) * 1980-02-22 1981-08-28 Rca Corp Dispositif mosfet vertical avec electrode de blindage

Also Published As

Publication number Publication date
BE696250A (de) 1967-09-01
FR1517242A (fr) 1968-03-15
DE1614141B2 (de) 1970-12-10
NL6704306A (de) 1967-10-02
DE1614141A1 (de) 1970-05-27
SE313879B (de) 1969-08-25
US3453506A (en) 1969-07-01
GB1132810A (en) 1968-11-06

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Legal Events

Date Code Title Description
PL Patent ceased