SE313879B - - Google Patents
Info
- Publication number
- SE313879B SE313879B SE4271/67A SE427167A SE313879B SE 313879 B SE313879 B SE 313879B SE 4271/67 A SE4271/67 A SE 4271/67A SE 427167 A SE427167 A SE 427167A SE 313879 B SE313879 B SE 313879B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2048966 | 1966-03-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE313879B true SE313879B (xx) | 1969-08-25 |
Family
ID=12028544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE4271/67A SE313879B (xx) | 1966-03-30 | 1967-03-29 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3453506A (xx) |
BE (1) | BE696250A (xx) |
CH (1) | CH476399A (xx) |
FR (1) | FR1517242A (xx) |
GB (1) | GB1132810A (xx) |
NL (1) | NL6704306A (xx) |
SE (1) | SE313879B (xx) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL161924C (nl) * | 1969-07-03 | 1980-03-17 | Philips Nv | Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden. |
SE456291B (sv) * | 1980-02-22 | 1988-09-19 | Rca Corp | Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen |
US4511911A (en) * | 1981-07-22 | 1985-04-16 | International Business Machines Corporation | Dense dynamic memory cell structure and process |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3333115A (en) * | 1963-11-20 | 1967-07-25 | Toko Inc | Field-effect transistor having plural insulated-gate electrodes that vary space-charge voltage as a function of drain voltage |
US3339128A (en) * | 1964-07-31 | 1967-08-29 | Rca Corp | Insulated offset gate field effect transistor |
US3363166A (en) * | 1965-04-03 | 1968-01-09 | Hitachi Ltd | Semiconductor modulator |
-
1967
- 1967-03-14 GB GB11894/67A patent/GB1132810A/en not_active Expired
- 1967-03-21 US US624922A patent/US3453506A/en not_active Expired - Lifetime
- 1967-03-23 NL NL6704306A patent/NL6704306A/xx unknown
- 1967-03-29 BE BE696250D patent/BE696250A/xx not_active IP Right Cessation
- 1967-03-29 SE SE4271/67A patent/SE313879B/xx unknown
- 1967-03-29 FR FR100635A patent/FR1517242A/fr not_active Expired
- 1967-03-30 CH CH446567A patent/CH476399A/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CH476399A (de) | 1969-07-31 |
GB1132810A (en) | 1968-11-06 |
NL6704306A (xx) | 1967-10-02 |
DE1614141A1 (de) | 1970-05-27 |
US3453506A (en) | 1969-07-01 |
FR1517242A (fr) | 1968-03-15 |
BE696250A (xx) | 1967-09-01 |
DE1614141B2 (de) | 1970-12-10 |