ES348128A1 - Un dispositivo de transistor de efecto de campo, de com- puerta aislada. - Google Patents
Un dispositivo de transistor de efecto de campo, de com- puerta aislada.Info
- Publication number
- ES348128A1 ES348128A1 ES348128A ES348128A ES348128A1 ES 348128 A1 ES348128 A1 ES 348128A1 ES 348128 A ES348128 A ES 348128A ES 348128 A ES348128 A ES 348128A ES 348128 A1 ES348128 A1 ES 348128A1
- Authority
- ES
- Spain
- Prior art keywords
- source
- drain
- field effect
- insulated gate
- gate field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB55813/66A GB1173150A (en) | 1966-12-13 | 1966-12-13 | Improvements in Insulated Gate Field Effect Transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
ES348128A1 true ES348128A1 (es) | 1969-03-16 |
Family
ID=10474958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES348128A Expired ES348128A1 (es) | 1966-12-13 | 1967-12-11 | Un dispositivo de transistor de efecto de campo, de com- puerta aislada. |
Country Status (9)
Country | Link |
---|---|
US (1) | US3631310A (es) |
BE (1) | BE707821A (es) |
CH (1) | CH466872A (es) |
DE (1) | DE1614300C3 (es) |
DK (1) | DK116803B (es) |
ES (1) | ES348128A1 (es) |
GB (1) | GB1173150A (es) |
NL (1) | NL158657B (es) |
SE (1) | SE340131B (es) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1316555A (es) * | 1969-08-12 | 1973-05-09 | ||
US3766446A (en) * | 1969-11-20 | 1973-10-16 | Kogyo Gijutsuin | Integrated circuits comprising lateral transistors and process for fabrication thereof |
DE2000093C2 (de) * | 1970-01-02 | 1982-04-01 | 6000 Frankfurt Licentia Patent-Verwaltungs-Gmbh | Feldeffekttransistor |
US3988761A (en) * | 1970-02-06 | 1976-10-26 | Sony Corporation | Field-effect transistor and method of making the same |
JPS4936515B1 (es) * | 1970-06-10 | 1974-10-01 | ||
US3852800A (en) * | 1971-08-02 | 1974-12-03 | Texas Instruments Inc | One transistor dynamic memory cell |
JPS5123432B2 (es) * | 1971-08-26 | 1976-07-16 | ||
JPS5368581A (en) * | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
DE2801085A1 (de) * | 1977-01-11 | 1978-07-13 | Zaidan Hojin Handotai Kenkyu | Statischer induktionstransistor |
DE2729657A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
US4132998A (en) * | 1977-08-29 | 1979-01-02 | Rca Corp. | Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate |
JPS54125986A (en) * | 1978-03-23 | 1979-09-29 | Handotai Kenkyu Shinkokai | Semiconductor including insulated gate type transistor |
US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
GB2150348A (en) * | 1983-11-29 | 1985-06-26 | Philips Electronic Associated | Insulated-gate field-effect transistors and their manufacture |
US6312997B1 (en) * | 1998-08-12 | 2001-11-06 | Micron Technology, Inc. | Low voltage high performance semiconductor devices and methods |
US6777746B2 (en) * | 2002-03-27 | 2004-08-17 | Kabushiki Kaisha Toshiba | Field effect transistor and application device thereof |
JP3944461B2 (ja) * | 2002-03-27 | 2007-07-11 | 株式会社東芝 | 電界効果型トランジスタおよびその応用装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2869055A (en) * | 1957-09-20 | 1959-01-13 | Beckman Instruments Inc | Field effect transistor |
NL265382A (es) * | 1960-03-08 | |||
NL267831A (es) * | 1960-08-17 | |||
NL6407158A (es) * | 1963-06-24 | 1964-12-28 | ||
FR1399362A (fr) * | 1963-06-24 | 1965-05-14 | Hitachi Ltd | Elément semi-conducteur à effet de champ |
FR1435488A (fr) * | 1964-06-01 | 1966-04-15 | Rca Corp | Transistors à effets de champ et à porte isolée |
FR1443781A (fr) * | 1964-08-17 | 1966-06-24 | Motorola Inc | Procédé pour la fabrication de semi-conducteurs et cache photographique pour cette fabrication |
US3305708A (en) * | 1964-11-25 | 1967-02-21 | Rca Corp | Insulated-gate field-effect semiconductor device |
US3456168A (en) * | 1965-02-19 | 1969-07-15 | United Aircraft Corp | Structure and method for production of narrow doped region semiconductor devices |
US3340598A (en) * | 1965-04-19 | 1967-09-12 | Teledyne Inc | Method of making field effect transistor device |
-
1966
- 1966-12-13 GB GB55813/66A patent/GB1173150A/en not_active Expired
-
1967
- 1967-11-29 DE DE1614300A patent/DE1614300C3/de not_active Expired
- 1967-12-05 US US688227A patent/US3631310A/en not_active Expired - Lifetime
- 1967-12-08 NL NL6716683.A patent/NL158657B/xx not_active IP Right Cessation
- 1967-12-08 DK DK616867AA patent/DK116803B/da unknown
- 1967-12-11 BE BE707821D patent/BE707821A/xx not_active IP Right Cessation
- 1967-12-11 CH CH1743367A patent/CH466872A/de unknown
- 1967-12-11 SE SE17001/67A patent/SE340131B/xx unknown
- 1967-12-11 ES ES348128A patent/ES348128A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1614300B2 (de) | 1974-10-10 |
CH466872A (de) | 1968-12-31 |
SE340131B (es) | 1971-11-08 |
DE1614300A1 (de) | 1970-07-09 |
NL158657B (nl) | 1978-11-15 |
US3631310A (en) | 1971-12-28 |
NL6716683A (es) | 1968-06-14 |
DE1614300C3 (de) | 1982-02-11 |
DK116803B (da) | 1970-02-16 |
BE707821A (es) | 1968-06-11 |
GB1173150A (en) | 1969-12-03 |
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