ES348128A1 - Un dispositivo de transistor de efecto de campo, de com- puerta aislada. - Google Patents
Un dispositivo de transistor de efecto de campo, de com- puerta aislada.Info
- Publication number
- ES348128A1 ES348128A1 ES348128A ES348128A ES348128A1 ES 348128 A1 ES348128 A1 ES 348128A1 ES 348128 A ES348128 A ES 348128A ES 348128 A ES348128 A ES 348128A ES 348128 A1 ES348128 A1 ES 348128A1
- Authority
- ES
- Spain
- Prior art keywords
- source
- drain
- field effect
- insulated gate
- gate field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
- H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB55813/66A GB1173150A (en) | 1966-12-13 | 1966-12-13 | Improvements in Insulated Gate Field Effect Transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES348128A1 true ES348128A1 (es) | 1969-03-16 |
Family
ID=10474958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES348128A Expired ES348128A1 (es) | 1966-12-13 | 1967-12-11 | Un dispositivo de transistor de efecto de campo, de com- puerta aislada. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3631310A (es) |
| BE (1) | BE707821A (es) |
| CH (1) | CH466872A (es) |
| DE (1) | DE1614300C3 (es) |
| DK (1) | DK116803B (es) |
| ES (1) | ES348128A1 (es) |
| GB (1) | GB1173150A (es) |
| NL (1) | NL158657B (es) |
| SE (1) | SE340131B (es) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1316555A (es) * | 1969-08-12 | 1973-05-09 | ||
| US3766446A (en) * | 1969-11-20 | 1973-10-16 | Kogyo Gijutsuin | Integrated circuits comprising lateral transistors and process for fabrication thereof |
| DE2000093C2 (de) * | 1970-01-02 | 1982-04-01 | 6000 Frankfurt Licentia Patent-Verwaltungs-Gmbh | Feldeffekttransistor |
| US3988761A (en) * | 1970-02-06 | 1976-10-26 | Sony Corporation | Field-effect transistor and method of making the same |
| JPS4936515B1 (es) * | 1970-06-10 | 1974-10-01 | ||
| US3852800A (en) * | 1971-08-02 | 1974-12-03 | Texas Instruments Inc | One transistor dynamic memory cell |
| JPS5123432B2 (es) * | 1971-08-26 | 1976-07-16 | ||
| JPS5368581A (en) * | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
| DE2801085A1 (de) * | 1977-01-11 | 1978-07-13 | Zaidan Hojin Handotai Kenkyu | Statischer induktionstransistor |
| DE2729657A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
| US4132998A (en) * | 1977-08-29 | 1979-01-02 | Rca Corp. | Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate |
| JPS54125986A (en) * | 1978-03-23 | 1979-09-29 | Handotai Kenkyu Shinkokai | Semiconductor including insulated gate type transistor |
| US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
| GB2150348A (en) * | 1983-11-29 | 1985-06-26 | Philips Electronic Associated | Insulated-gate field-effect transistors and their manufacture |
| US6312997B1 (en) * | 1998-08-12 | 2001-11-06 | Micron Technology, Inc. | Low voltage high performance semiconductor devices and methods |
| US6777746B2 (en) * | 2002-03-27 | 2004-08-17 | Kabushiki Kaisha Toshiba | Field effect transistor and application device thereof |
| JP3944461B2 (ja) * | 2002-03-27 | 2007-07-11 | 株式会社東芝 | 電界効果型トランジスタおよびその応用装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2869055A (en) * | 1957-09-20 | 1959-01-13 | Beckman Instruments Inc | Field effect transistor |
| NL265382A (es) * | 1960-03-08 | |||
| NL267831A (es) * | 1960-08-17 | |||
| FR1399362A (fr) * | 1963-06-24 | 1965-05-14 | Hitachi Ltd | Elément semi-conducteur à effet de champ |
| GB1071384A (en) * | 1963-06-24 | 1967-06-07 | Hitachi Ltd | Method for manufacture of field effect semiconductor devices |
| FR1435488A (fr) * | 1964-06-01 | 1966-04-15 | Rca Corp | Transistors à effets de champ et à porte isolée |
| FR1443781A (fr) * | 1964-08-17 | 1966-06-24 | Motorola Inc | Procédé pour la fabrication de semi-conducteurs et cache photographique pour cette fabrication |
| US3305708A (en) * | 1964-11-25 | 1967-02-21 | Rca Corp | Insulated-gate field-effect semiconductor device |
| US3456168A (en) * | 1965-02-19 | 1969-07-15 | United Aircraft Corp | Structure and method for production of narrow doped region semiconductor devices |
| US3340598A (en) * | 1965-04-19 | 1967-09-12 | Teledyne Inc | Method of making field effect transistor device |
-
1966
- 1966-12-13 GB GB55813/66A patent/GB1173150A/en not_active Expired
-
1967
- 1967-11-29 DE DE1614300A patent/DE1614300C3/de not_active Expired
- 1967-12-05 US US688227A patent/US3631310A/en not_active Expired - Lifetime
- 1967-12-08 NL NL6716683.A patent/NL158657B/xx not_active IP Right Cessation
- 1967-12-08 DK DK616867AA patent/DK116803B/da unknown
- 1967-12-11 SE SE17001/67A patent/SE340131B/xx unknown
- 1967-12-11 BE BE707821D patent/BE707821A/xx not_active IP Right Cessation
- 1967-12-11 ES ES348128A patent/ES348128A1/es not_active Expired
- 1967-12-11 CH CH1743367A patent/CH466872A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH466872A (de) | 1968-12-31 |
| US3631310A (en) | 1971-12-28 |
| DK116803B (da) | 1970-02-16 |
| DE1614300A1 (de) | 1970-07-09 |
| BE707821A (es) | 1968-06-11 |
| DE1614300C3 (de) | 1982-02-11 |
| DE1614300B2 (de) | 1974-10-10 |
| NL6716683A (es) | 1968-06-14 |
| SE340131B (es) | 1971-11-08 |
| GB1173150A (en) | 1969-12-03 |
| NL158657B (nl) | 1978-11-15 |
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