DK116803B - Felteffekttransistor med isoleret styreelektrode. - Google Patents

Felteffekttransistor med isoleret styreelektrode.

Info

Publication number
DK116803B
DK116803B DK616867AA DK616867A DK116803B DK 116803 B DK116803 B DK 116803B DK 616867A A DK616867A A DK 616867AA DK 616867 A DK616867 A DK 616867A DK 116803 B DK116803 B DK 116803B
Authority
DK
Denmark
Prior art keywords
field effect
effect transistor
insulated gate
insulated
gate
Prior art date
Application number
DK616867AA
Other languages
Danish (da)
English (en)
Inventor
M Das
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of DK116803B publication Critical patent/DK116803B/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
DK616867AA 1966-12-13 1967-12-08 Felteffekttransistor med isoleret styreelektrode. DK116803B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB55813/66A GB1173150A (en) 1966-12-13 1966-12-13 Improvements in Insulated Gate Field Effect Transistors

Publications (1)

Publication Number Publication Date
DK116803B true DK116803B (da) 1970-02-16

Family

ID=10474958

Family Applications (1)

Application Number Title Priority Date Filing Date
DK616867AA DK116803B (da) 1966-12-13 1967-12-08 Felteffekttransistor med isoleret styreelektrode.

Country Status (9)

Country Link
US (1) US3631310A (de)
BE (1) BE707821A (de)
CH (1) CH466872A (de)
DE (1) DE1614300C3 (de)
DK (1) DK116803B (de)
ES (1) ES348128A1 (de)
GB (1) GB1173150A (de)
NL (1) NL158657B (de)
SE (1) SE340131B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1316555A (de) * 1969-08-12 1973-05-09
US3766446A (en) * 1969-11-20 1973-10-16 Kogyo Gijutsuin Integrated circuits comprising lateral transistors and process for fabrication thereof
DE2000093C2 (de) * 1970-01-02 1982-04-01 6000 Frankfurt Licentia Patent-Verwaltungs-Gmbh Feldeffekttransistor
US3988761A (en) * 1970-02-06 1976-10-26 Sony Corporation Field-effect transistor and method of making the same
JPS4936515B1 (de) * 1970-06-10 1974-10-01
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5123432B2 (de) * 1971-08-26 1976-07-16
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor
DE2729657A1 (de) * 1977-06-30 1979-01-11 Siemens Ag Feldeffekttransistor mit extrem kurzer kanallaenge
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
JPS54125986A (en) * 1978-03-23 1979-09-29 Handotai Kenkyu Shinkokai Semiconductor including insulated gate type transistor
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
GB2150348A (en) * 1983-11-29 1985-06-26 Philips Electronic Associated Insulated-gate field-effect transistors and their manufacture
US6312997B1 (en) * 1998-08-12 2001-11-06 Micron Technology, Inc. Low voltage high performance semiconductor devices and methods
JP3944461B2 (ja) * 2002-03-27 2007-07-11 株式会社東芝 電界効果型トランジスタおよびその応用装置
US6777746B2 (en) * 2002-03-27 2004-08-17 Kabushiki Kaisha Toshiba Field effect transistor and application device thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
NL265382A (de) * 1960-03-08
NL267831A (de) * 1960-08-17
FR1399362A (fr) * 1963-06-24 1965-05-14 Hitachi Ltd Elément semi-conducteur à effet de champ
GB1071384A (en) * 1963-06-24 1967-06-07 Hitachi Ltd Method for manufacture of field effect semiconductor devices
FR1435488A (fr) * 1964-06-01 1966-04-15 Rca Corp Transistors à effets de champ et à porte isolée
FR1443781A (fr) * 1964-08-17 1966-06-24 Motorola Inc Procédé pour la fabrication de semi-conducteurs et cache photographique pour cette fabrication
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3456168A (en) * 1965-02-19 1969-07-15 United Aircraft Corp Structure and method for production of narrow doped region semiconductor devices
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device

Also Published As

Publication number Publication date
US3631310A (en) 1971-12-28
NL158657B (nl) 1978-11-15
DE1614300A1 (de) 1970-07-09
ES348128A1 (es) 1969-03-16
BE707821A (de) 1968-06-11
DE1614300B2 (de) 1974-10-10
DE1614300C3 (de) 1982-02-11
CH466872A (de) 1968-12-31
GB1173150A (en) 1969-12-03
SE340131B (de) 1971-11-08
NL6716683A (de) 1968-06-14

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