AT307506B - Verfahren zum Herstellen epitaktischer Halbleiterschichten auf Fremdsubstraten - Google Patents
Verfahren zum Herstellen epitaktischer Halbleiterschichten auf FremdsubstratenInfo
- Publication number
- AT307506B AT307506B AT919769A AT919769A AT307506B AT 307506 B AT307506 B AT 307506B AT 919769 A AT919769 A AT 919769A AT 919769 A AT919769 A AT 919769A AT 307506 B AT307506 B AT 307506B
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor layers
- epitaxial semiconductor
- foreign substrates
- producing epitaxial
- producing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/967—Semiconductor on specified insulator
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19681794273 DE1794273A1 (de) | 1968-09-30 | 1968-09-30 | Verfahren zum Herstellen epitaktischer Halbleiterschichten auf Fremdsubstraten |
Publications (1)
Publication Number | Publication Date |
---|---|
AT307506B true AT307506B (de) | 1973-05-25 |
Family
ID=5707933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT919769A AT307506B (de) | 1968-09-30 | 1969-09-29 | Verfahren zum Herstellen epitaktischer Halbleiterschichten auf Fremdsubstraten |
Country Status (9)
Country | Link |
---|---|
US (1) | US3650822A (de) |
JP (1) | JPS4844834B1 (de) |
AT (1) | AT307506B (de) |
CH (1) | CH500592A (de) |
DE (1) | DE1794273A1 (de) |
FR (1) | FR2019190A1 (de) |
GB (1) | GB1243295A (de) |
NL (1) | NL6912007A (de) |
SE (1) | SE359457B (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3902924A (en) * | 1973-08-30 | 1975-09-02 | Honeywell Inc | Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof |
US3914525A (en) * | 1974-03-15 | 1975-10-21 | Rockwell International Corp | Mercury sulfide films and method of growth |
DE2621145C3 (de) * | 1976-05-13 | 1978-11-02 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen | Verfahren zur Herstellung von Siliciumschichten |
FR2354810A1 (fr) * | 1976-06-14 | 1978-01-13 | Anvar | Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3341361A (en) * | 1963-02-21 | 1967-09-12 | Union Carbide Corp | Process for providing a silicon sheet |
US3411946A (en) * | 1963-09-05 | 1968-11-19 | Raytheon Co | Process and apparatus for producing an intermetallic compound |
US3414434A (en) * | 1965-06-30 | 1968-12-03 | North American Rockwell | Single crystal silicon on spinel insulators |
-
1968
- 1968-09-30 DE DE19681794273 patent/DE1794273A1/de active Pending
-
1969
- 1969-08-06 NL NL6912007A patent/NL6912007A/xx unknown
- 1969-09-25 US US860942A patent/US3650822A/en not_active Expired - Lifetime
- 1969-09-26 CH CH1453369A patent/CH500592A/de not_active IP Right Cessation
- 1969-09-29 AT AT919769A patent/AT307506B/de not_active IP Right Cessation
- 1969-09-29 GB GB47762/69A patent/GB1243295A/en not_active Expired
- 1969-09-29 FR FR6933104A patent/FR2019190A1/fr not_active Withdrawn
- 1969-09-29 JP JP44077009A patent/JPS4844834B1/ja active Pending
- 1969-09-30 SE SE13467/69A patent/SE359457B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1794273A1 (de) | 1971-09-23 |
FR2019190A1 (de) | 1970-06-26 |
JPS4844834B1 (de) | 1973-12-27 |
CH500592A (de) | 1970-12-15 |
NL6912007A (de) | 1970-04-01 |
US3650822A (en) | 1972-03-21 |
SE359457B (de) | 1973-09-03 |
GB1243295A (en) | 1971-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |