AT264594B - Verfahren zum Herstellen von Metallkontakten auf Halbleiterbauelementen - Google Patents
Verfahren zum Herstellen von Metallkontakten auf HalbleiterbauelementenInfo
- Publication number
- AT264594B AT264594B AT47467A AT47467A AT264594B AT 264594 B AT264594 B AT 264594B AT 47467 A AT47467 A AT 47467A AT 47467 A AT47467 A AT 47467A AT 264594 B AT264594 B AT 264594B
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor components
- metal contacts
- producing metal
- producing
- contacts
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1966S0101518 DE1514668B2 (de) | 1966-01-19 | 1966-01-19 | Verfahren zum herstellen von chrom- silber-kontakten auf halbleiterbauelementen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT264594B true AT264594B (de) | 1968-09-10 |
Family
ID=7523808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT47467A AT264594B (de) | 1966-01-19 | 1967-01-17 | Verfahren zum Herstellen von Metallkontakten auf Halbleiterbauelementen |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT264594B (de) |
| CH (1) | CH468720A (de) |
| DE (1) | DE1514668B2 (de) |
| FR (1) | FR1508570A (de) |
| GB (1) | GB1166202A (de) |
| NL (1) | NL6615306A (de) |
| SE (1) | SE331856B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3001613A1 (de) * | 1980-01-17 | 1981-07-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum einbau einer halbleitervorrichtung in ein gehaeuse |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2602329B2 (ja) * | 1988-07-06 | 1997-04-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 金属層で基板を被覆する方法 |
| DE69220566T2 (de) * | 1991-11-21 | 1998-02-19 | Nisshin Steel Co Ltd | Verfahren zur bildung einer beschichtung mittels aufdampfen |
-
1966
- 1966-01-19 DE DE1966S0101518 patent/DE1514668B2/de active Granted
- 1966-10-28 NL NL6615306A patent/NL6615306A/xx unknown
-
1967
- 1967-01-17 CH CH66167A patent/CH468720A/de unknown
- 1967-01-17 AT AT47467A patent/AT264594B/de active
- 1967-01-18 GB GB255667A patent/GB1166202A/en not_active Expired
- 1967-01-18 FR FR91624A patent/FR1508570A/fr not_active Expired
- 1967-01-19 SE SE83667A patent/SE331856B/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3001613A1 (de) * | 1980-01-17 | 1981-07-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum einbau einer halbleitervorrichtung in ein gehaeuse |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1508570A (fr) | 1968-01-05 |
| CH468720A (de) | 1969-02-15 |
| GB1166202A (en) | 1969-10-08 |
| SE331856B (de) | 1971-01-18 |
| DE1514668B2 (de) | 1977-05-12 |
| NL6615306A (de) | 1967-07-20 |
| DE1514668A1 (de) | 1969-07-03 |
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