FR1508570A - Procédé pour la réalisation de contacts métalliques sur des composants à semiconducteurs - Google Patents

Procédé pour la réalisation de contacts métalliques sur des composants à semiconducteurs

Info

Publication number
FR1508570A
FR1508570A FR91624A FR91624A FR1508570A FR 1508570 A FR1508570 A FR 1508570A FR 91624 A FR91624 A FR 91624A FR 91624 A FR91624 A FR 91624A FR 1508570 A FR1508570 A FR 1508570A
Authority
FR
France
Prior art keywords
semiconductor components
metal contacts
making metal
making
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR91624A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Application granted granted Critical
Publication of FR1508570A publication Critical patent/FR1508570A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
FR91624A 1966-01-19 1967-01-18 Procédé pour la réalisation de contacts métalliques sur des composants à semiconducteurs Expired FR1508570A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1966S0101518 DE1514668B2 (de) 1966-01-19 1966-01-19 Verfahren zum herstellen von chrom- silber-kontakten auf halbleiterbauelementen

Publications (1)

Publication Number Publication Date
FR1508570A true FR1508570A (fr) 1968-01-05

Family

ID=7523808

Family Applications (1)

Application Number Title Priority Date Filing Date
FR91624A Expired FR1508570A (fr) 1966-01-19 1967-01-18 Procédé pour la réalisation de contacts métalliques sur des composants à semiconducteurs

Country Status (7)

Country Link
AT (1) AT264594B (de)
CH (1) CH468720A (de)
DE (1) DE1514668B2 (de)
FR (1) FR1508570A (de)
GB (1) GB1166202A (de)
NL (1) NL6615306A (de)
SE (1) SE331856B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0351533A1 (de) * 1988-07-06 1990-01-24 International Business Machines Corporation Verfahren zur Beschichtung eines Substrats mit einer Metallschicht

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001613C2 (de) * 1980-01-17 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Befestigung eines, eine monolithisch integrierte Halbleiterschaltung enthaltenden Halbleiterkörpers aus Silicium an einer Unterlage mit einem entsprechenden Verfahren hierzu
WO1993010275A1 (fr) * 1991-11-21 1993-05-27 Nisshin Steel Co., Ltd. Procede de formation d'une couche de revetement par evaporation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0351533A1 (de) * 1988-07-06 1990-01-24 International Business Machines Corporation Verfahren zur Beschichtung eines Substrats mit einer Metallschicht

Also Published As

Publication number Publication date
DE1514668A1 (de) 1969-07-03
DE1514668B2 (de) 1977-05-12
GB1166202A (en) 1969-10-08
SE331856B (de) 1971-01-18
NL6615306A (de) 1967-07-20
CH468720A (de) 1969-02-15
AT264594B (de) 1968-09-10

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