FR2354810A1 - Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline - Google Patents

Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline

Info

Publication number
FR2354810A1
FR2354810A1 FR7617957A FR7617957A FR2354810A1 FR 2354810 A1 FR2354810 A1 FR 2354810A1 FR 7617957 A FR7617957 A FR 7617957A FR 7617957 A FR7617957 A FR 7617957A FR 2354810 A1 FR2354810 A1 FR 2354810A1
Authority
FR
France
Prior art keywords
layers
monocristalline
layer
monocrystalline
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7617957A
Other languages
English (en)
Inventor
Armand Hadni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7617957A priority Critical patent/FR2354810A1/fr
Priority to US05/806,103 priority patent/US4211821A/en
Priority to DE19772726657 priority patent/DE2726657A1/de
Priority to NL7706537A priority patent/NL7706537A/xx
Priority to JP7039277A priority patent/JPS52152880A/ja
Publication of FR2354810A1 publication Critical patent/FR2354810A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/063—Gp II-IV-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/068—Graphite masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y10T428/24339—Keyed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

L'invention est relative aux couches monocristallines. Le procédé de réalisation de telles couches consiste à déposer une couche mince 2, de nature quelconque, sur un support monocristallin 3. Sur la couche 2 on fait croître la couche monocristalline qui est établie en un matériau présentant la même structure ou une structure voisine de celle du cristal 3. Pour faire croître la couche monocristalline, on peut déposer une goutte de solution 6 sur la couche 2 et faire tourner un support 4 sur lequel est installé l'ensemble. Applications : Réalisation de couches monocristallines sur support quelconque.
FR7617957A 1976-06-14 1976-06-14 Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline Withdrawn FR2354810A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7617957A FR2354810A1 (fr) 1976-06-14 1976-06-14 Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline
US05/806,103 US4211821A (en) 1976-06-14 1977-06-13 Monocrystalline like layers, processes of manufacturing such layers, and articles comprising such layers
DE19772726657 DE2726657A1 (de) 1976-06-14 1977-06-14 Verfahren zur herstellung einer duennen, monokristallinen schicht bzw. eines solchen belages aus gegebenem material
NL7706537A NL7706537A (nl) 1976-06-14 1977-06-14 Monokristallijne lagen, werkwijzen ter vervaar- diging van dergelijke lagen, en structuren, die een monokristallijne laag omvatten.
JP7039277A JPS52152880A (en) 1976-06-14 1977-06-14 Single crystal layer*manufacture of same and structure equipped with same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7617957A FR2354810A1 (fr) 1976-06-14 1976-06-14 Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline

Publications (1)

Publication Number Publication Date
FR2354810A1 true FR2354810A1 (fr) 1978-01-13

Family

ID=9174333

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7617957A Withdrawn FR2354810A1 (fr) 1976-06-14 1976-06-14 Couches monocristallines, procedes de fabrication de telles couches, et structures comportant une couche monocristalline

Country Status (5)

Country Link
US (1) US4211821A (fr)
JP (1) JPS52152880A (fr)
DE (1) DE2726657A1 (fr)
FR (1) FR2354810A1 (fr)
NL (1) NL7706537A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981002948A1 (fr) * 1980-04-10 1981-10-15 Massachusetts Inst Technology Procede de production de feuilles d'un materiau cristallin et dispositifs fabriques a partir de ces feuilles
US4350561A (en) * 1980-05-16 1982-09-21 Spire Corporation Single crystal processes and products
US4509162A (en) * 1980-10-28 1985-04-02 Quixote Corporation High density recording medium
US4561486A (en) * 1981-04-30 1985-12-31 Hoxan Corporation Method for fabricating polycrystalline silicon wafer
US4688623A (en) * 1981-12-21 1987-08-25 Atlantic Richfield Company Textured silicon ribbon growth wheel
US4562106A (en) * 1982-06-23 1985-12-31 Massachusetts Institute Of Technology Product made by method of entraining dislocations and other crystalline defects
US4479846A (en) * 1982-06-23 1984-10-30 Massachusetts Institute Of Technology Method of entraining dislocations and other crystalline defects in heated film contacting patterned region
US4648991A (en) * 1984-05-30 1987-03-10 Research Corporation Pyroelectric crystals with high figures of merit
US5254211A (en) * 1987-03-27 1993-10-19 Canon Kabushiki Kaisha Method for forming crystals
JPH0628250B2 (ja) * 1988-07-18 1994-04-13 古河機械金属株式会社 砒素拡散剤とその成形物の製法およびこれを使用した半導体装置の製造方法
JPH06196648A (ja) * 1992-12-25 1994-07-15 Fuji Xerox Co Ltd 配向性強誘電体薄膜素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289831B (de) * 1961-12-22 1969-02-27 Siemens Ag Verfahren zur Herstellung duenner frei tragender Folien aus einkristallinem Halbleitermaterial
DE1794273A1 (de) * 1968-09-30 1971-09-23 Siemens Ag Verfahren zum Herstellen epitaktischer Halbleiterschichten auf Fremdsubstraten
US3634150A (en) * 1969-06-25 1972-01-11 Gen Electric Method for forming epitaxial crystals or wafers in selected regions of substrates
SU400139A1 (ru) * 1971-07-07 1974-02-25 Фонд вноертш
FR2227640B1 (fr) * 1973-04-27 1977-12-30 Radiotechnique Compelec
US4111725A (en) * 1977-05-06 1978-09-05 Bell Telephone Laboratories, Incorporated Selective lift-off technique for fabricating gaas fets

Also Published As

Publication number Publication date
US4211821A (en) 1980-07-08
NL7706537A (nl) 1977-12-16
DE2726657A1 (de) 1978-02-09
JPS52152880A (en) 1977-12-19

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