FR2468996A1 - Procede de production d'une couche isolante recouvrant une face d'un substrat semiconducteur et son utilisation pour la production de photopiles - Google Patents
Procede de production d'une couche isolante recouvrant une face d'un substrat semiconducteur et son utilisation pour la production de photopilesInfo
- Publication number
- FR2468996A1 FR2468996A1 FR8023370A FR8023370A FR2468996A1 FR 2468996 A1 FR2468996 A1 FR 2468996A1 FR 8023370 A FR8023370 A FR 8023370A FR 8023370 A FR8023370 A FR 8023370A FR 2468996 A1 FR2468996 A1 FR 2468996A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor substrate
- insulating layer
- producing
- face
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000005119 centrifugation Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Procédé de production d'une couche isolante recouvrant une face d'un substrat semiconducteur, et en particulier d'une couche de masquage de diffusion pour la production de photopiles. La couche isolante est déposée par centrifugation d'une solution non-dopée sur le substrat semiconducteur en rotation.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792944180 DE2944180A1 (de) | 1979-11-02 | 1979-11-02 | Verfahren zum herstellen einer einen halbleiterkoerper einseitig bedeckenden isolierschicht |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2468996A1 true FR2468996A1 (fr) | 1981-05-08 |
Family
ID=6084926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8023370A Withdrawn FR2468996A1 (fr) | 1979-11-02 | 1980-10-31 | Procede de production d'une couche isolante recouvrant une face d'un substrat semiconducteur et son utilisation pour la production de photopiles |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5693333A (fr) |
DE (1) | DE2944180A1 (fr) |
FR (1) | FR2468996A1 (fr) |
GB (1) | GB2062962A (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5676538A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Formation of insulating film on semiconductor substrate |
JPS59111329A (ja) * | 1982-12-17 | 1984-06-27 | Fuji Electric Corp Res & Dev Ltd | 被着薄膜の製造方法 |
US4935095A (en) * | 1985-06-21 | 1990-06-19 | National Semiconductor Corporation | Germanosilicate spin-on glasses |
EP0218117A3 (fr) * | 1985-10-11 | 1989-11-23 | Allied Corporation | Polymères polycyclosilazanes et leur emploi comme film diélectrique dans la fabrication de circuits intégrés |
DE3725134A1 (de) * | 1987-07-29 | 1989-02-09 | Basf Ag | Flaechenfoermiges, mehrschichtiges, laseroptisches aufzeichnungsmaterial |
JPH01216544A (ja) * | 1988-02-24 | 1989-08-30 | Sharp Corp | 半導体素子のパッシベーション膜形成方法 |
DE3831857A1 (de) * | 1988-09-20 | 1990-03-22 | Meinhard Prof Dr Ing Knoll | Verfahren zur herstellung eines lichtdurchlaessigen dielektrikums aus einer dotierten silizium-verbindung bei einer inversionsschicht-solarzelle |
DE3833931A1 (de) * | 1988-10-05 | 1990-04-12 | Texas Instruments Deutschland | Verfahren zum herstellen einer dotierten isolierschicht |
US4894352A (en) * | 1988-10-26 | 1990-01-16 | Texas Instruments Inc. | Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride |
US5186745A (en) * | 1991-02-04 | 1993-02-16 | Motorola, Inc. | Teos based spin-on-glass and processes for making and using the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US505582A (en) * | 1893-09-26 | Speed-measure | ||
US3559002A (en) * | 1968-12-09 | 1971-01-26 | Gen Electric | Semiconductor device with multiple shock absorbing and passivation layers |
US3707944A (en) * | 1970-10-23 | 1973-01-02 | Ibm | Automatic photoresist apply and dry apparatus |
US3695928A (en) * | 1970-12-07 | 1972-10-03 | Western Electric Co | Selective coating |
US3889632A (en) * | 1974-05-31 | 1975-06-17 | Ibm | Variable incidence drive for deposition tooling |
DE2506457C3 (de) * | 1975-02-15 | 1980-01-24 | S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel | Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht |
DE2637105B2 (de) * | 1976-08-18 | 1978-10-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum gleichmäßigen Verteilen eines Lackes |
US4068019A (en) * | 1976-11-08 | 1978-01-10 | International Business Machines Corporation | Spin coating process for prevention of edge buildup |
DE2743011C2 (de) * | 1977-09-23 | 1982-06-03 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zum Aufbringen einer lichtempfindlichen Lackschicht auf eine Halbleiterscheibe |
DD136673A1 (de) * | 1977-10-21 | 1979-07-18 | Manfred Schwan | Verfahren zum aufbringen von schutz-und isolierschichten auf unebene halbleiteroberflaechen |
-
1979
- 1979-11-02 DE DE19792944180 patent/DE2944180A1/de not_active Ceased
-
1980
- 1980-10-31 FR FR8023370A patent/FR2468996A1/fr not_active Withdrawn
- 1980-11-03 GB GB8035287A patent/GB2062962A/en not_active Withdrawn
- 1980-11-04 JP JP15397180A patent/JPS5693333A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2944180A1 (de) | 1981-05-07 |
GB2062962A (en) | 1981-05-28 |
JPS5693333A (en) | 1981-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2468996A1 (fr) | Procede de production d'une couche isolante recouvrant une face d'un substrat semiconducteur et son utilisation pour la production de photopiles | |
CA1011005A (en) | Method for fabricating mos devices with a multiplicity of thresholds on a single semiconductor substrate | |
EP0329482A3 (fr) | Procédé pour fabriquer un transistor à couche mince | |
EP0193820A3 (fr) | Procédé pour former un dessin dans un film mince | |
JPS5334484A (en) | Forming method for multi layer wiring | |
AU561637B2 (en) | Coating | |
GB8401250D0 (en) | Semiconductor fabrication | |
JPS6439041A (en) | Method of depositing conductive material on semiconductor substrate selectively | |
JPS5516464A (en) | Method of forming wafer for semiconductor device | |
GB1433161A (en) | Epitaxially grown layers | |
AU654785B2 (en) | Apparatus for forming diffusion junctions in solar cell substrates | |
JPS5249772A (en) | Process for production of semiconductor device | |
US4050966A (en) | Method for the preparation of diffused silicon semiconductor components | |
TW331018B (en) | Method of fabricating semiconductor devices | |
SE7909584L (sv) | Solcell med grund homoovergang | |
JPS54127685A (en) | Manufacture of lateral field effect transistor | |
JPS57128063A (en) | Semiconductor device and manufacture thereof | |
JPS52137987A (en) | Production of semiconductor device | |
SE8503833D0 (sv) | Forfarande for tillverkning av solceller | |
JPS56158471A (en) | Manufacture of semiconductor storage device | |
JPS5272162A (en) | Production of semiconductor device | |
JPS5247689A (en) | Process for production of semiconductor device | |
JPS57130433A (en) | Manufacture of single crystal semiconductor thin film | |
JPS6472556A (en) | Manufacture of photoelectric conversion device | |
JPS5314555A (en) | Depositing method of impurity to silicon wafersa |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RE | Withdrawal of published application |