JPS5693333A - Method of manufacturing insulating layer for covering one side surface of semiconductor - Google Patents

Method of manufacturing insulating layer for covering one side surface of semiconductor

Info

Publication number
JPS5693333A
JPS5693333A JP15397180A JP15397180A JPS5693333A JP S5693333 A JPS5693333 A JP S5693333A JP 15397180 A JP15397180 A JP 15397180A JP 15397180 A JP15397180 A JP 15397180A JP S5693333 A JPS5693333 A JP S5693333A
Authority
JP
Japan
Prior art keywords
covering
semiconductor
insulating layer
manufacturing insulating
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15397180A
Other languages
English (en)
Japanese (ja)
Inventor
Pushiyundaa Buirii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of JPS5693333A publication Critical patent/JPS5693333A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP15397180A 1979-11-02 1980-11-04 Method of manufacturing insulating layer for covering one side surface of semiconductor Pending JPS5693333A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792944180 DE2944180A1 (de) 1979-11-02 1979-11-02 Verfahren zum herstellen einer einen halbleiterkoerper einseitig bedeckenden isolierschicht

Publications (1)

Publication Number Publication Date
JPS5693333A true JPS5693333A (en) 1981-07-28

Family

ID=6084926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15397180A Pending JPS5693333A (en) 1979-11-02 1980-11-04 Method of manufacturing insulating layer for covering one side surface of semiconductor

Country Status (4)

Country Link
JP (1) JPS5693333A (fr)
DE (1) DE2944180A1 (fr)
FR (1) FR2468996A1 (fr)
GB (1) GB2062962A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111329A (ja) * 1982-12-17 1984-06-27 Fuji Electric Corp Res & Dev Ltd 被着薄膜の製造方法
JPH01216544A (ja) * 1988-02-24 1989-08-30 Sharp Corp 半導体素子のパッシベーション膜形成方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676538A (en) * 1979-11-28 1981-06-24 Sumitomo Electric Ind Ltd Formation of insulating film on semiconductor substrate
US4935095A (en) * 1985-06-21 1990-06-19 National Semiconductor Corporation Germanosilicate spin-on glasses
EP0218117A3 (fr) * 1985-10-11 1989-11-23 Allied Corporation Polymères polycyclosilazanes et leur emploi comme film diélectrique dans la fabrication de circuits intégrés
DE3725134A1 (de) * 1987-07-29 1989-02-09 Basf Ag Flaechenfoermiges, mehrschichtiges, laseroptisches aufzeichnungsmaterial
DE3831857A1 (de) * 1988-09-20 1990-03-22 Meinhard Prof Dr Ing Knoll Verfahren zur herstellung eines lichtdurchlaessigen dielektrikums aus einer dotierten silizium-verbindung bei einer inversionsschicht-solarzelle
DE3833931A1 (de) * 1988-10-05 1990-04-12 Texas Instruments Deutschland Verfahren zum herstellen einer dotierten isolierschicht
US4894352A (en) * 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
US5186745A (en) * 1991-02-04 1993-02-16 Motorola, Inc. Teos based spin-on-glass and processes for making and using the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US505582A (en) * 1893-09-26 Speed-measure
US3559002A (en) * 1968-12-09 1971-01-26 Gen Electric Semiconductor device with multiple shock absorbing and passivation layers
US3707944A (en) * 1970-10-23 1973-01-02 Ibm Automatic photoresist apply and dry apparatus
US3695928A (en) * 1970-12-07 1972-10-03 Western Electric Co Selective coating
US3889632A (en) * 1974-05-31 1975-06-17 Ibm Variable incidence drive for deposition tooling
DE2506457C3 (de) * 1975-02-15 1980-01-24 S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht
DE2637105B2 (de) * 1976-08-18 1978-10-05 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum gleichmäßigen Verteilen eines Lackes
US4068019A (en) * 1976-11-08 1978-01-10 International Business Machines Corporation Spin coating process for prevention of edge buildup
DE2743011C2 (de) * 1977-09-23 1982-06-03 Siemens AG, 1000 Berlin und 8000 München Anordnung zum Aufbringen einer lichtempfindlichen Lackschicht auf eine Halbleiterscheibe
DD136673A1 (de) * 1977-10-21 1979-07-18 Manfred Schwan Verfahren zum aufbringen von schutz-und isolierschichten auf unebene halbleiteroberflaechen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111329A (ja) * 1982-12-17 1984-06-27 Fuji Electric Corp Res & Dev Ltd 被着薄膜の製造方法
JPH01216544A (ja) * 1988-02-24 1989-08-30 Sharp Corp 半導体素子のパッシベーション膜形成方法

Also Published As

Publication number Publication date
DE2944180A1 (de) 1981-05-07
GB2062962A (en) 1981-05-28
FR2468996A1 (fr) 1981-05-08

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