JPS57181113A - Surface dielectric layer type semiconductor porcelain composition and method of producing same - Google Patents

Surface dielectric layer type semiconductor porcelain composition and method of producing same

Info

Publication number
JPS57181113A
JPS57181113A JP6666281A JP6666281A JPS57181113A JP S57181113 A JPS57181113 A JP S57181113A JP 6666281 A JP6666281 A JP 6666281A JP 6666281 A JP6666281 A JP 6666281A JP S57181113 A JPS57181113 A JP S57181113A
Authority
JP
Japan
Prior art keywords
dielectric layer
type semiconductor
layer type
producing same
porcelain composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6666281A
Other languages
Japanese (ja)
Inventor
Yoshihiro Matsuo
Tatsuya Wada
Shiyouichi Ikebe
Masanori Fujimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6666281A priority Critical patent/JPS57181113A/en
Publication of JPS57181113A publication Critical patent/JPS57181113A/en
Pending legal-status Critical Current

Links

Landscapes

  • Ceramic Capacitors (AREA)
JP6666281A 1981-04-30 1981-04-30 Surface dielectric layer type semiconductor porcelain composition and method of producing same Pending JPS57181113A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6666281A JPS57181113A (en) 1981-04-30 1981-04-30 Surface dielectric layer type semiconductor porcelain composition and method of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6666281A JPS57181113A (en) 1981-04-30 1981-04-30 Surface dielectric layer type semiconductor porcelain composition and method of producing same

Publications (1)

Publication Number Publication Date
JPS57181113A true JPS57181113A (en) 1982-11-08

Family

ID=13322331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6666281A Pending JPS57181113A (en) 1981-04-30 1981-04-30 Surface dielectric layer type semiconductor porcelain composition and method of producing same

Country Status (1)

Country Link
JP (1) JPS57181113A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0265211A (en) * 1988-08-31 1990-03-05 Taiyo Yuden Co Ltd Porcelain composition and porcelain for reduction reoxidation type semiconductor capacitor
JPH0265210A (en) * 1988-08-31 1990-03-05 Taiyo Yuden Co Ltd Porcelain composition and porcelain for reduction reoxidation type semiconductor capacitor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0265211A (en) * 1988-08-31 1990-03-05 Taiyo Yuden Co Ltd Porcelain composition and porcelain for reduction reoxidation type semiconductor capacitor
JPH0265210A (en) * 1988-08-31 1990-03-05 Taiyo Yuden Co Ltd Porcelain composition and porcelain for reduction reoxidation type semiconductor capacitor
JPH0514410B2 (en) * 1988-08-31 1993-02-25 Taiyo Yuden Kk
JPH0514409B2 (en) * 1988-08-31 1993-02-25 Taiyo Yuden Kk

Similar Documents

Publication Publication Date Title
EP0198976A3 (en) Preparation of polysilsesquioxane and formation of insulating layer of silylated polysilsesquioxane
JPS57113253A (en) Method of forming dielectric insulating region in single crystal silicon substrate
DE3572085D1 (en) Method of selectively forming an insulation layer
EP0161740A3 (en) Method of manufacturing semiconductor substrate
GB2014790A (en) Semiconductor substrate and method of manufacture thereof
JPS5763843A (en) Method of forming recess dielectric region on silicon substrate
GB2109995B (en) Semiconductor structures and methods of forming such structures
GB2104723B (en) Semiconductor substrate and method of manufacturing the same
DE3272508D1 (en) Pinned ceramic substrate and method of making such
GB2090588B (en) Method of producing glazed ceramic substrate
GB2149222B (en) Multilatered ceramic substrate and method of making the same
JPS56144522A (en) Grain boundary dielectric layer type semiconductor porcelain composition
DE3274972D1 (en) Silicon carbide electrical insulator material of low dielectric constant and manufacturing method therefor
JPS5693333A (en) Method of manufacturing insulating layer for covering one side surface of semiconductor
JPS57117235A (en) High resistance semiconductor substrate and method of producing same
JPS57181113A (en) Surface dielectric layer type semiconductor porcelain composition and method of producing same
JPS57132315A (en) Surface dielectric layer type semiconductor porcelain composition and method of producing same
JPS57199102A (en) Conductive paste for forming conductive layer on surface of porcelain
JPS56110201A (en) Method of forming positive temperature coefficient porcelain semiconductor
JPS57178313A (en) Surface layer type semiconductor porcelain condenser
HK89087A (en) Method of manufacturing semiconductor substrate and substrate so manufactured
JPS57180111A (en) Conductive paste for forming conductive layer on surface of porcelain
JPS5795020A (en) Switching substrate and method of producing same
JPS5694718A (en) Method of forming semiconductor porcelain grain boudary layer
JPS57211215A (en) Method of forming dielectric layer in integrated circuit