DE2621145C3 - - Google Patents

Info

Publication number
DE2621145C3
DE2621145C3 DE2621145A DE2621145A DE2621145C3 DE 2621145 C3 DE2621145 C3 DE 2621145C3 DE 2621145 A DE2621145 A DE 2621145A DE 2621145 A DE2621145 A DE 2621145A DE 2621145 C3 DE2621145 C3 DE 2621145C3
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2621145A
Other versions
DE2621145A1 (de
DE2621145B2 (de
Inventor
Hermann Dr.-Ing. 8034 Germering Sigmund
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority to DE2621145A priority Critical patent/DE2621145C3/de
Publication of DE2621145A1 publication Critical patent/DE2621145A1/de
Publication of DE2621145B2 publication Critical patent/DE2621145B2/de
Application granted granted Critical
Publication of DE2621145C3 publication Critical patent/DE2621145C3/de
Application status is Expired legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007Pulling on a substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06Non-vertical pulling
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/914Crystallization on a continuous moving substrate or cooling surface, e.g. wheel, cylinder, belt
DE2621145A 1976-05-13 1976-05-13 Expired DE2621145C3 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2621145A DE2621145C3 (de) 1976-05-13 1976-05-13

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2621145A DE2621145C3 (de) 1976-05-13 1976-05-13
US05/795,844 US4113548A (en) 1976-05-13 1977-05-11 Process for the production of silicon layers
JP5378677A JPS52137981A (en) 1976-05-13 1977-05-12 Method of making silicon layer

Publications (3)

Publication Number Publication Date
DE2621145A1 DE2621145A1 (de) 1977-11-17
DE2621145B2 DE2621145B2 (de) 1978-03-09
DE2621145C3 true DE2621145C3 (de) 1978-11-02

Family

ID=5977810

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2621145A Expired DE2621145C3 (de) 1976-05-13 1976-05-13

Country Status (3)

Country Link
US (1) US4113548A (de)
JP (1) JPS52137981A (de)
DE (1) DE2621145C3 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2850805C2 (de) * 1978-11-23 1986-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
DE3132776A1 (de) * 1981-08-19 1983-03-03 Heliotronic Gmbh Verfahren zur herstellung grob- bis einkristalliner folien aus halbleitermaterial
JP2693032B2 (ja) * 1990-10-16 1997-12-17 キヤノン株式会社 半導体層の形成方法及びこれを用いる太陽電池の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1794273A1 (de) * 1968-09-30 1971-09-23 Siemens Ag Verfahren zum Herstellen epitaktischer Halbleiterschichten auf Fremdsubstraten
BE795005A (fr) * 1972-02-09 1973-05-29 Rca Corp Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
US3785884A (en) * 1972-07-21 1974-01-15 Rca Corp Method for depositing a semiconductor material on the substrate from the liquid phase

Also Published As

Publication number Publication date
DE2621145B2 (de) 1978-03-09
US4113548A (en) 1978-09-12
DE2621145A1 (de) 1977-11-17
JPS52137981A (en) 1977-11-17

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee