AT251040B - Verfahren zum Herstellen von Halbleiterkörperstrukturen mit mindestens einem fast völlig im Inneren des epitaktischen Körpers gelegenen flächenhaften, leitenden Bereich - Google Patents
Verfahren zum Herstellen von Halbleiterkörperstrukturen mit mindestens einem fast völlig im Inneren des epitaktischen Körpers gelegenen flächenhaften, leitenden BereichInfo
- Publication number
- AT251040B AT251040B AT927264A AT927264A AT251040B AT 251040 B AT251040 B AT 251040B AT 927264 A AT927264 A AT 927264A AT 927264 A AT927264 A AT 927264A AT 251040 B AT251040 B AT 251040B
- Authority
- AT
- Austria
- Prior art keywords
- entirely
- planar
- interior
- area located
- conductive area
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/142—Semiconductor-metal-semiconductor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US329079A US3386864A (en) | 1963-12-09 | 1963-12-09 | Semiconductor-metal-semiconductor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT251040B true AT251040B (de) | 1966-12-12 |
Family
ID=23283758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT927264A AT251040B (de) | 1963-12-09 | 1964-11-02 | Verfahren zum Herstellen von Halbleiterkörperstrukturen mit mindestens einem fast völlig im Inneren des epitaktischen Körpers gelegenen flächenhaften, leitenden Bereich |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3386864A (de) |
| AT (1) | AT251040B (de) |
| DE (1) | DE1280416B (de) |
| GB (1) | GB1046840A (de) |
| NL (1) | NL144777B (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508980A (en) * | 1967-07-26 | 1970-04-28 | Motorola Inc | Method of fabricating an integrated circuit structure with dielectric isolation |
| US3737739A (en) * | 1971-02-22 | 1973-06-05 | Ibm | Single crystal regions in dielectric substrate |
| BE791930A (fr) * | 1971-12-02 | 1973-03-16 | Western Electric Co | Dispositif electroluminescent et procede pour sa fabrication |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
| US4378629A (en) * | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
| US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
| US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US4671851A (en) * | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
| US4735679A (en) * | 1987-03-30 | 1988-04-05 | International Business Machines Corporation | Method of improving silicon-on-insulator uniformity |
| SE0002179D0 (sv) * | 2000-06-13 | 2000-06-13 | Abb Research Ltd | A method for producing a pn-junction |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2882377A (en) * | 1951-10-24 | 1959-04-14 | Pittsburgh Plate Glass Co | Electrical resistor metal coatings on refractory materials |
| US2984589A (en) * | 1952-08-06 | 1961-05-16 | Centre Nat Rech Scient | Electrical resistors |
| US2842463A (en) * | 1953-09-04 | 1958-07-08 | Bell Telephone Labor Inc | Vapor deposited metal films |
| BE549320A (de) * | 1955-09-02 | |||
| US3039896A (en) * | 1959-02-24 | 1962-06-19 | Union Carbide Corp | Transparent electrically conductive film and method of making the same |
| US3083441A (en) * | 1959-04-13 | 1963-04-02 | Texas Instruments Inc | Method for fabricating transistors |
| US3094650A (en) * | 1960-04-22 | 1963-06-18 | Servomechanisms Inc | Method of making multiple layer condensers by vapor deposition and product thereof |
| BE603293A (de) * | 1960-05-02 | |||
| FR1338169A (fr) * | 1961-11-27 | 1963-09-20 | Western Electric Co | Dispositifs semiconducteurs et leur procédé de fabrication |
| US3234058A (en) * | 1962-06-27 | 1966-02-08 | Ibm | Method of forming an integral masking fixture by epitaxial growth |
| NL295980A (de) * | 1962-07-31 |
-
1963
- 1963-12-09 US US329079A patent/US3386864A/en not_active Expired - Lifetime
-
1964
- 1964-10-31 DE DEJ26794A patent/DE1280416B/de active Pending
- 1964-11-02 AT AT927264A patent/AT251040B/de active
- 1964-11-30 GB GB48594/64A patent/GB1046840A/en not_active Expired
- 1964-12-04 NL NL646414096A patent/NL144777B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1046840A (en) | 1966-10-26 |
| US3386864A (en) | 1968-06-04 |
| NL6414096A (de) | 1965-06-10 |
| NL144777B (nl) | 1975-01-15 |
| DE1280416B (de) | 1968-10-17 |
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