CH419354A - Verfahren zur Herstellung von inversionsschichtfreien Halbleiter-Sperrschichten - Google Patents

Verfahren zur Herstellung von inversionsschichtfreien Halbleiter-Sperrschichten

Info

Publication number
CH419354A
CH419354A CH674464A CH674464A CH419354A CH 419354 A CH419354 A CH 419354A CH 674464 A CH674464 A CH 674464A CH 674464 A CH674464 A CH 674464A CH 419354 A CH419354 A CH 419354A
Authority
CH
Switzerland
Prior art keywords
production
inversion layer
free semiconductor
semiconductor barriers
barriers
Prior art date
Application number
CH674464A
Other languages
English (en)
Inventor
Edward Mutter Walter
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH419354A publication Critical patent/CH419354A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/098—Layer conversion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
CH674464A 1963-05-24 1964-05-22 Verfahren zur Herstellung von inversionsschichtfreien Halbleiter-Sperrschichten CH419354A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US283028A US3319311A (en) 1963-05-24 1963-05-24 Semiconductor devices and their fabrication
US63633567A 1967-05-05 1967-05-05

Publications (1)

Publication Number Publication Date
CH419354A true CH419354A (de) 1966-08-31

Family

ID=26961826

Family Applications (1)

Application Number Title Priority Date Filing Date
CH674464A CH419354A (de) 1963-05-24 1964-05-22 Verfahren zur Herstellung von inversionsschichtfreien Halbleiter-Sperrschichten

Country Status (7)

Country Link
US (2) US3319311A (de)
BE (1) BE647885A (de)
CH (1) CH419354A (de)
DE (1) DE1259469B (de)
GB (1) GB1003131A (de)
NL (1) NL143072B (de)
SE (1) SE313117B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860948A (en) * 1964-02-13 1975-01-14 Hitachi Ltd Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby
US3389023A (en) * 1966-01-14 1968-06-18 Ibm Methods of making a narrow emitter transistor by masking and diffusion
USB534135I5 (de) * 1966-03-14
US3490964A (en) * 1966-04-29 1970-01-20 Texas Instruments Inc Process of forming semiconductor devices by masking and diffusion
US3479736A (en) * 1966-08-31 1969-11-25 Hitachi Ltd Method of making a semiconductor device
US3514846A (en) * 1967-11-15 1970-06-02 Bell Telephone Labor Inc Method of fabricating a planar avalanche photodiode
US3612959A (en) * 1969-01-31 1971-10-12 Unitrode Corp Planar zener diodes having uniform junction breakdown characteristics
US3755720A (en) * 1972-09-25 1973-08-28 Rca Corp Glass encapsulated semiconductor device
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
JPH06204236A (ja) * 1992-12-28 1994-07-22 Canon Inc 半導体装置、半導体製造装置、集積回路、半導体装置の製造方法および半導体製造方法
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
DE69429913T2 (de) * 1994-06-23 2002-10-31 St Microelectronics Srl Verfahren zur Herstellung eines Leistungsbauteils in MOS-Technik
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
JP3411559B2 (ja) * 1997-07-28 2003-06-03 マサチューセッツ・インスティチュート・オブ・テクノロジー シリコーン膜の熱分解化学蒸着法
US8928142B2 (en) * 2013-02-22 2015-01-06 Fairchild Semiconductor Corporation Apparatus related to capacitance reduction of a signal port

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2841510A (en) * 1958-07-01 Method of producing p-n junctions in
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
US2804405A (en) * 1954-12-24 1957-08-27 Bell Telephone Labor Inc Manufacture of silicon devices
US2989805A (en) * 1957-01-29 1961-06-27 August R Bringewald Magazine type safety razor
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
NL252855A (de) * 1959-06-23
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
FR1262176A (fr) * 1959-07-30 1961-05-26 Fairchild Semiconductor Dispositif semi-conducteur et conducteur
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
NL256734A (de) * 1959-10-28
FR1282020A (fr) * 1960-06-10 1962-01-19 Western Electric Co Dispositif semi-conducteur utilisant des films épitaxiaux
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor
NL276751A (de) * 1961-04-10
NL282779A (de) * 1961-09-08
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
NL286507A (de) * 1961-12-11
US3178798A (en) * 1962-05-09 1965-04-20 Ibm Vapor deposition process wherein the vapor contains both donor and acceptor impurities
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
BE636316A (de) * 1962-08-23 1900-01-01
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure

Also Published As

Publication number Publication date
DE1259469B (de) 1968-01-25
GB1003131A (en) 1965-09-02
US3319311A (en) 1967-05-16
SE313117B (de) 1969-08-04
BE647885A (de) 1964-08-31
NL143072B (nl) 1974-08-15
US3451866A (en) 1969-06-24
NL6405696A (de) 1964-11-25

Similar Documents

Publication Publication Date Title
CH468967A (de) Verfahren zur Herstellung von Aminen
CH419354A (de) Verfahren zur Herstellung von inversionsschichtfreien Halbleiter-Sperrschichten
CH442272A (de) Verfahren zur Herstellung von Nitrilen
AT251874B (de) Verfahren zur Herstellung von Organosiloxanmischpolymerisaten
AT266219B (de) Verfahren zur Herstellung von Halbleiteranordnungen
CH437789A (de) Verfahren zur Herstellung von Polykondensaten
CH440263A (de) Verfahren zur Herstellung von Cyclododecen
AT252212B (de) Verfahren zur Herstellung von Dicarbinolen
CH430750A (de) Verfahren zur Herstellung von Azapentanolen
CH455054A (de) Verfahren zur Herstellung von Planartransistoren
AT248404B (de) Verfahren zur Herstellung von Chlortrifluoräthylen
CH488765A (de) Verfahren zur Herstellung von Silicon-Polyimiden
CH441355A (de) Verfahren zur Herstellung von Antibiotika
CH413809A (de) Verfahren zur Herstellung von Mannit
AT279572B (de) Verfahren zur Herstellung von ω-Lactamen
CH460759A (de) Verfahren zur Herstellung von 11a-Hydroxy-progesteron
CH494065A (de) Verfahren zur Herstellung von Halbleiterkristallen
CH437247A (de) Verfahren zur Herstellung von Ylenalen
CH478072A (de) Verfahren zur Herstellung von Olefinen
CH480279A (de) Verfahren zur Herstellung von Decahydronaphthalin
AT249022B (de) Verfahren zur kontinuierlichen Herstellung von Trimethyladipinsäuredinitril
AT247358B (de) Verfahren zur kontinuierlichen Herstellung von Äthylenimin
CH443251A (de) Verfahren zur Herstellung von Propionaldehyd
CH414644A (de) Verbessertes Verfahren zur Herstellung von w-Lactamen
AT264710B (de) Verfahren zur Herstellung von Demethyltetracyclinen