CA2669883C - Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions - Google Patents
Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions Download PDFInfo
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- CA2669883C CA2669883C CA2669883A CA2669883A CA2669883C CA 2669883 C CA2669883 C CA 2669883C CA 2669883 A CA2669883 A CA 2669883A CA 2669883 A CA2669883 A CA 2669883A CA 2669883 C CA2669883 C CA 2669883C
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- temperature
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- nucleation
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- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 4
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- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 4
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- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 description 1
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- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- FPZZZGJWXOHLDJ-UHFFFAOYSA-N trihexylphosphane Chemical compound CCCCCCP(CCCCCC)CCCCCC FPZZZGJWXOHLDJ-UHFFFAOYSA-N 0.000 description 1
- BWHDROKFUHTORW-UHFFFAOYSA-N tritert-butylphosphane Chemical compound CC(C)(C)P(C(C)(C)C)C(C)(C)C BWHDROKFUHTORW-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/08—Other phosphides
- C01B25/082—Other phosphides of boron, aluminium, gallium or indium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
- Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe
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- Chemical & Material Sciences (AREA)
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- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006055218A DE102006055218A1 (de) | 2006-11-21 | 2006-11-21 | Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion |
| DE102006055218.0 | 2006-11-21 | ||
| PCT/EP2007/009677 WO2008061632A1 (de) | 2006-11-21 | 2007-11-08 | Verfahren zur synthese von nanoskaligen metallhaltigen nanopartikel und nanopartikeldispersionen |
Publications (2)
| Publication Number | Publication Date |
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| CA2669883A1 CA2669883A1 (en) | 2008-05-29 |
| CA2669883C true CA2669883C (en) | 2016-05-03 |
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|---|---|---|---|
| CA2669883A Expired - Fee Related CA2669883C (en) | 2006-11-21 | 2007-11-08 | Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions |
Country Status (10)
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| US (1) | US7833506B2 (enExample) |
| EP (1) | EP2106464B1 (enExample) |
| JP (2) | JP5324459B2 (enExample) |
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| CN (1) | CN101589181B (enExample) |
| CA (1) | CA2669883C (enExample) |
| DE (1) | DE102006055218A1 (enExample) |
| IL (1) | IL198733A (enExample) |
| TW (1) | TWI443236B (enExample) |
| WO (1) | WO2008061632A1 (enExample) |
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| KR101054747B1 (ko) * | 2007-10-18 | 2011-08-05 | 주식회사 엘지화학 | 환원제를 이용한 ６ａ족 원소를 포함하는 화합물의제조방법 |
| GB2457314A (en) | 2008-02-11 | 2009-08-12 | Ct Angewandte Nanotech Can | Apparatus and method for the manufacture of nanoparticles |
| KR101078050B1 (ko) * | 2008-10-27 | 2011-10-31 | 한국기계연구원 | 양자점 제조 장치 및 양자점 제조 방법 |
| DE102009015470A1 (de) | 2008-12-12 | 2010-06-17 | Byk-Chemie Gmbh | Verfahren zur Herstellung von Metallnanopartikeln und auf diese Weise erhaltene Metallnanopartikel und ihre Verwendung |
| EP2208526A1 (en) * | 2008-12-30 | 2010-07-21 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | An autosynthesizer for the controlled synthesis of nano- and sub-nanostructures |
| US8834965B2 (en) * | 2009-02-12 | 2014-09-16 | Xerox Corporation | Organoamine stabilized silver nanoparticles and process for producing same |
| JP5333069B2 (ja) * | 2009-09-01 | 2013-11-06 | 株式会社村田製作所 | 化合物半導体微粒子の製造方法 |
| US20110076839A1 (en) * | 2009-09-29 | 2011-03-31 | Xiaofan Ren | Making films composed of semiconductor nanocrystals |
| JP5563329B2 (ja) * | 2010-02-16 | 2014-07-30 | 株式会社新光化学工業所 | 金属ナノ粒子およびその製造方法 |
| KR101698762B1 (ko) | 2010-04-30 | 2017-01-23 | 삼성에스디아이 주식회사 | 리튬 전이금속 인산염의 제조방법 |
| US8801979B2 (en) | 2010-06-10 | 2014-08-12 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Apparatus and method for continuous production of materials |
| WO2012025548A1 (en) | 2010-08-27 | 2012-03-01 | Solvay Sa | Process for the preparation of alkenones |
| JP5818196B2 (ja) * | 2010-09-01 | 2015-11-18 | 株式会社 ナノ・キューブ・ジャパン | 酸化スズ超微粒子の製造方法 |
| WO2012035005A1 (en) | 2010-09-14 | 2012-03-22 | Bayer Technology Services Gmbh | Multistage surface modification procedure of semiconducting nanoparticles for use in hybrid solar cells and printable electronics |
| US8663522B2 (en) * | 2011-02-17 | 2014-03-04 | Massachusetts Institute Of Technology | Fiber draw synthesis |
| WO2012163976A1 (en) | 2011-06-03 | 2012-12-06 | Bayer Intellectual Property Gmbh | Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification |
| CN103502389B (zh) * | 2011-06-03 | 2016-01-20 | 拜耳技术工程（上海）有限公司 | 一种稀土掺杂荧光纳米粒子及其溶液的制备方法和系统 |
| WO2012168192A2 (en) | 2011-06-07 | 2012-12-13 | Bayer Intellectual Property Gmbh | Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification. |
| GB2494659A (en) * | 2011-09-14 | 2013-03-20 | Sharp Kk | Nitride nanoparticles with high quantum yield and narrow luminescence spectrum. |
| EP2599898A1 (en) | 2011-12-01 | 2013-06-05 | Bayer Intellectual Property GmbH | Continuous synthesis of high quantum yield InP/ZnS nanocrystals |
| EP2664607A1 (en) | 2012-05-16 | 2013-11-20 | Solvay Sa | Fluorination process |
| US8920766B2 (en) * | 2012-08-21 | 2014-12-30 | University Of Rochester | Quantum nanostructures, compositions thereof, and methods of making and using same |
| US9592555B2 (en) | 2013-03-14 | 2017-03-14 | Shoei Electronic Materials, Inc. | Continuous flow reactor for the synthesis of nanoparticles |
| USRE48454E1 (en) | 2013-03-14 | 2021-03-02 | Shoei Electronic Materials, Inc. | Continuous flow reactor for the synthesis of nanoparticles |
| HK1213003A1 (zh) | 2013-03-15 | 2016-06-24 | Nanoco Technologies Ltd | 第iii-v族/锌硫属化物合金化的半导体量子点 |
| US9751071B2 (en) | 2013-12-27 | 2017-09-05 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Continuous microwave-assisted segmented flow reactor for high-quality nanocrystal synthesis |
| JP6493901B2 (ja) * | 2014-05-22 | 2019-04-03 | 国立研究開発法人産業技術総合研究所 | 有機半導体微粒子分散液の製造方法 |
| JP5888821B2 (ja) * | 2014-06-09 | 2016-03-22 | 株式会社新光化学工業所 | 金属ナノ粒子およびその製造方法 |
| US10640882B2 (en) * | 2015-07-23 | 2020-05-05 | Shoei Chemical Inc. | Method for producing nanocrystals and nanocrystal production device |
| CN105460903B (zh) * | 2015-09-22 | 2016-11-23 | 苏州星烁纳米科技有限公司 | 一种纳米晶体制备方法、纳米晶体及气体溶液的制备和保存装置 |
| JP2016000867A (ja) * | 2015-10-05 | 2016-01-07 | 株式会社新光化学工業所 | 金属ナノ粒子およびその製造方法 |
| US10369538B2 (en) | 2015-12-31 | 2019-08-06 | Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. | Flow system and process for photoluminescent nanoparticle production |
| US10815424B2 (en) | 2015-12-31 | 2020-10-27 | Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. | One-step process for synthesis of core shell nanocrystals |
| CN114538369A (zh) * | 2015-12-31 | 2022-05-27 | 陶氏环球技术有限责任公司 | 纳米结构材料的连续流动合成 |
| CN108057898A (zh) * | 2016-11-08 | 2018-05-22 | 高勇谦 | 一种高度可控金属纳米线的连续自动化合成方法 |
| EP3604215A4 (en) | 2017-03-28 | 2020-02-26 | Fujifilm Corporation | GROUP (III) - (V) SEMICONDUCTOR NANOPARTICLE PRODUCTION METHOD, GROUP (III) - (V) SEMICONDUCTOR QUANTIC POINT PRODUCTION METHOD, AND FLOW REACTION SYSTEM |
| CN106952705A (zh) * | 2017-03-30 | 2017-07-14 | 中国人民解放军装甲兵工程学院 | 一种再分散性优越的磁流变液及其湿式制备方法 |
| JP6442715B2 (ja) * | 2017-04-28 | 2018-12-26 | エム・テクニック株式会社 | 微粒子の製造方法 |
| KR102008875B1 (ko) * | 2017-12-26 | 2019-08-08 | 주식회사 포스코 | 농도 구배 전구체의 제조 장치 및 그 재료 투입 스케줄링 방법 |
| JP7196728B2 (ja) * | 2019-03-28 | 2022-12-27 | 昭栄化学工業株式会社 | 粒子の製造方法及び粒子製造装置 |
| US11998989B2 (en) * | 2019-04-20 | 2024-06-04 | Trustees Of Dartmouth College | Method and apparatus for magnetic nanoparticles development with ultra-small size, uniformity and monodispersity |
| JP7643835B2 (ja) * | 2020-03-30 | 2025-03-11 | ノリタケ株式会社 | 金属ナノ粒子の製造方法 |
| GB202008101D0 (en) * | 2020-05-29 | 2020-07-15 | Ucl Business Ltd | Synthesis of nanoparticles |
| CN113000851B (zh) * | 2021-01-28 | 2023-04-18 | 南开大学 | 一种利用微通道反应器制备粒径可控超顺磁性纳米铁的方法 |
| JP2023061896A (ja) * | 2021-10-20 | 2023-05-02 | 財團法人工業技術研究院 | コアシェル型量子ドットの調製装置および調製方法 |
| IT202200001577A1 (it) * | 2022-01-31 | 2023-07-31 | Consiglio Nazionale Ricerche | Process for the production of nanocrystals of metal chalcohalides |
| CN114957732B (zh) * | 2022-05-31 | 2025-08-12 | 浙江大学 | 一种基于微反应器系统的生物相容纳米团聚体颗粒制备方法 |
| CN116425195B (zh) * | 2023-04-14 | 2024-10-29 | 安徽精卓光显技术有限责任公司 | 一种化合物半导体纳米材料及其制备方法 |
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| GB9518910D0 (en) | 1995-09-15 | 1995-11-15 | Imperial College | Process |
| DE69707288T2 (de) | 1996-07-15 | 2002-07-18 | Calcitech Ltd., Hamilton | Herstellung von pulvern |
| US6179312B1 (en) * | 1997-03-14 | 2001-01-30 | Freightliner Llc | Retractable stairway for entering and exiting a vehicle |
| ATE307919T1 (de) | 1999-07-26 | 2005-11-15 | Massachusetts Inst Technology | Nanokristalline tellur enthaltende materialien |
| US20020083888A1 (en) * | 2000-12-28 | 2002-07-04 | Zehnder Donald A. | Flow synthesis of quantum dot nanocrystals |
| JP4058267B2 (ja) * | 2001-12-20 | 2008-03-05 | 富士フイルム株式会社 | ナノ粒子の製造方法および該ナノ粒子含有分散液の調製方法 |
| JP2003193119A (ja) * | 2001-12-20 | 2003-07-09 | Fuji Photo Film Co Ltd | ナノ粒子の製造方法および該ナノ粒子含有分散液の調製方法 |
| JP3740528B2 (ja) * | 2002-02-05 | 2006-02-01 | 独立行政法人産業技術総合研究所 | 微細粒子製造方法 |
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| JP4486305B2 (ja) * | 2002-12-26 | 2010-06-23 | 大日本印刷株式会社 | 半導体超微粒子の製造方法および製造装置 |
| US7393516B2 (en) * | 2003-01-31 | 2008-07-01 | Seo Dong-Kyun | Preparation of metal chalcogenides from reactions of metal compounds and chalcogen |
| EP1452225B1 (en) * | 2003-02-26 | 2008-09-10 | National Institute of Advanced Industrial Science and Technology | Preparation of nanoparticles |
| CN1232377C (zh) * | 2003-06-05 | 2005-12-21 | 中国科学院理化技术研究所 | 立方体银纳米晶颗粒的制备方法 |
| US20050016851A1 (en) * | 2003-07-24 | 2005-01-27 | Jensen Klavs F. | Microchemical method and apparatus for synthesis and coating of colloidal nanoparticles |
| US7229497B2 (en) | 2003-08-26 | 2007-06-12 | Massachusetts Institute Of Technology | Method of preparing nanocrystals |
| US7998271B2 (en) | 2003-11-19 | 2011-08-16 | William Marsh Rice Universtiy | Solvents and new method for the synthesis of CdSe semiconductor nanocrystals |
| CA2491144C (en) * | 2003-12-30 | 2013-06-11 | National Research Council Of Canada | Method of synthesizing colloidal nanocrystals |
| CN100554532C (zh) * | 2005-04-22 | 2009-10-28 | 吉林大学 | 温和条件下水相快速合成CdTe纳米晶的方法 |
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2006
- 2006-11-21 DE DE102006055218A patent/DE102006055218A1/de not_active Withdrawn
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2007
- 2007-11-08 WO PCT/EP2007/009677 patent/WO2008061632A1/de not_active Ceased
- 2007-11-08 EP EP07819686.2A patent/EP2106464B1/de not_active Not-in-force
- 2007-11-08 CA CA2669883A patent/CA2669883C/en not_active Expired - Fee Related
- 2007-11-08 KR KR1020097012813A patent/KR20090082288A/ko not_active Ceased
- 2007-11-08 US US12/515,706 patent/US7833506B2/en active Active
- 2007-11-08 JP JP2009537505A patent/JP5324459B2/ja not_active Expired - Fee Related
- 2007-11-08 CN CN2007800502434A patent/CN101589181B/zh not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2106464B1 (de) | 2018-12-26 |
| TWI443236B (zh) | 2014-07-01 |
| CN101589181A (zh) | 2009-11-25 |
| US7833506B2 (en) | 2010-11-16 |
| CA2669883A1 (en) | 2008-05-29 |
| IL198733A (en) | 2013-10-31 |
| WO2008061632A1 (de) | 2008-05-29 |
| US20090295005A1 (en) | 2009-12-03 |
| JP2010510056A (ja) | 2010-04-02 |
| DE102006055218A1 (de) | 2008-05-29 |
| CN101589181B (zh) | 2013-04-24 |
| IL198733A0 (en) | 2010-02-17 |
| JP2014004576A (ja) | 2014-01-16 |
| TW200839042A (en) | 2008-10-01 |
| EP2106464A1 (de) | 2009-10-07 |
| KR20090082288A (ko) | 2009-07-29 |
| JP5324459B2 (ja) | 2013-10-23 |
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