ATE307919T1 - Nanokristalline tellur enthaltende materialien - Google Patents

Nanokristalline tellur enthaltende materialien

Info

Publication number
ATE307919T1
ATE307919T1 AT00950729T AT00950729T ATE307919T1 AT E307919 T1 ATE307919 T1 AT E307919T1 AT 00950729 T AT00950729 T AT 00950729T AT 00950729 T AT00950729 T AT 00950729T AT E307919 T1 ATE307919 T1 AT E307919T1
Authority
AT
Austria
Prior art keywords
nanocrystalline
containing materials
nanocrystallites
tellurium containing
tellurium
Prior art date
Application number
AT00950729T
Other languages
English (en)
Inventor
Frederic V Mikulec
Moungi G Bawendi
Sungjee Kim
Original Assignee
Massachusetts Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology filed Critical Massachusetts Inst Technology
Application granted granted Critical
Publication of ATE307919T1 publication Critical patent/ATE307919T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C07F9/22—Amides of acids of phosphorus
    • C07F9/224—Phosphorus triamides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/50—Organo-phosphines
    • C07F9/53—Organo-phosphine oxides; Organo-phosphine thioxides
    • C07F9/5304—Acyclic saturated phosphine oxides or thioxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
    • C01P2004/86—Thin layer coatings, i.e. the coating thickness being less than 0.1 time the particle radius
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Molecular Biology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Luminescent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
AT00950729T 1999-07-26 2000-07-26 Nanokristalline tellur enthaltende materialien ATE307919T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14570899P 1999-07-26 1999-07-26
PCT/US2000/020357 WO2001007689A2 (en) 1999-07-26 2000-07-26 Tellurium-containing nanocrystalline materials

Publications (1)

Publication Number Publication Date
ATE307919T1 true ATE307919T1 (de) 2005-11-15

Family

ID=22514201

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00950729T ATE307919T1 (de) 1999-07-26 2000-07-26 Nanokristalline tellur enthaltende materialien

Country Status (7)

Country Link
EP (1) EP1250474B1 (de)
JP (2) JP5165824B2 (de)
AT (1) ATE307919T1 (de)
AU (1) AU6379100A (de)
CA (1) CA2374337C (de)
DE (1) DE60023559T2 (de)
WO (1) WO2001007689A2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6207392B1 (en) 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
US6819692B2 (en) 2000-03-14 2004-11-16 Massachusetts Institute Of Technology Optical amplifiers and lasers
ATE362615T1 (de) 2000-03-20 2007-06-15 Massachusetts Inst Technology Anorganische teilchenkonjugate
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US20020110180A1 (en) 2001-02-09 2002-08-15 Barney Alfred A. Temperature-sensing composition
US6846565B2 (en) 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
AU2002320252A1 (en) * 2001-07-02 2003-01-21 Board Of Regents, University Of Texas System Light-emitting nanoparticles and method of making same
US8618595B2 (en) 2001-07-02 2013-12-31 Merck Patent Gmbh Applications of light-emitting nanoparticles
US6815064B2 (en) * 2001-07-20 2004-11-09 Quantum Dot Corporation Luminescent nanoparticles and methods for their preparation
DE60232350D1 (de) 2001-09-17 2009-06-25 Massachusetts Inst Technology Halbleiternanokristall-verbundstoff
US7150910B2 (en) 2001-11-16 2006-12-19 Massachusetts Institute Of Technology Nanocrystal structures
FR2838241B1 (fr) * 2002-04-09 2004-06-25 Commissariat Energie Atomique Materiaux luminescents constitues de nanocristaux a structure coeur/coquille et leur procede de preparation
AU2003224411B2 (en) * 2002-05-15 2008-07-31 Yissum Research Development Company Of The Hebrew University Of Jerusalem Method for producing inorganic semiconductor nanocrystalline rods and their use
US6788453B2 (en) 2002-05-15 2004-09-07 Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem Method for producing inorganic semiconductor nanocrystalline rods and their use
US7319709B2 (en) 2002-07-23 2008-01-15 Massachusetts Institute Of Technology Creating photon atoms
US7229497B2 (en) 2003-08-26 2007-06-12 Massachusetts Institute Of Technology Method of preparing nanocrystals
EP1731583A4 (de) * 2004-03-30 2008-12-03 Idemitsu Kosan Co Fluoreszenzlichtumwandlungsmedium und farbiges licht emittierende vorrichtung
US7465352B2 (en) * 2004-07-23 2008-12-16 University Of Florida Research Foundation, Inc. One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection
US8137457B2 (en) 2004-07-23 2012-03-20 University Of Florida Research Foundation, Inc. One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection
US7229690B2 (en) 2004-07-26 2007-06-12 Massachusetts Institute Of Technology Microspheres including nanoparticles
US7316967B2 (en) 2004-09-24 2008-01-08 Massachusetts Institute Of Technology Flow method and reactor for manufacturing noncrystals
DE102004055380B4 (de) * 2004-11-17 2007-11-22 Johannes-Gutenberg-Universität Mainz Verfahren zur Synthese von Nanokristalliten und danach hergestellte Nanokristallite
US8134175B2 (en) 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
JP2007224233A (ja) * 2006-02-27 2007-09-06 Idemitsu Kosan Co Ltd 半導体ナノ粒子の製造方法及びその製造装置
DE102006055218A1 (de) 2006-11-21 2008-05-29 Bayer Technology Services Gmbh Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145606A (ja) * 1982-02-22 1983-08-30 Toshiba Corp ＩｎＰ合成方法
JPS60108307A (ja) * 1983-11-16 1985-06-13 Res Dev Corp Of Japan テルル−リン系非晶質化合物材料及びその製造法
JP3229620B2 (ja) * 1991-07-22 2001-11-19 三井化学株式会社 半導体超微粒子の製造方法および組成物
JPH08328188A (ja) * 1995-05-30 1996-12-13 Konica Corp ハロゲン化銀写真感光材料
GB9518910D0 (en) * 1995-09-15 1995-11-15 Imperial College Process
US5711803A (en) * 1995-09-29 1998-01-27 Midwest Research Institute Preparation of a semiconductor thin film
US6322901B1 (en) * 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials

Also Published As

Publication number Publication date
WO2001007689A2 (en) 2001-02-01
JP2003505330A (ja) 2003-02-12
EP1250474B1 (de) 2005-10-26
CA2374337C (en) 2009-04-14
WO2001007689A3 (en) 2001-09-27
DE60023559T2 (de) 2006-09-07
JP5165824B2 (ja) 2013-03-21
DE60023559D1 (de) 2005-12-01
EP1250474A2 (de) 2002-10-23
JP5513421B2 (ja) 2014-06-04
CA2374337A1 (en) 2001-02-01
AU6379100A (en) 2001-02-13
JP2011148797A (ja) 2011-08-04

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