CN101589181B - 用于合成含纳米级金属的纳米颗粒和纳米颗粒分散体的方法 - Google Patents

用于合成含纳米级金属的纳米颗粒和纳米颗粒分散体的方法 Download PDF

Info

Publication number
CN101589181B
CN101589181B CN2007800502434A CN200780050243A CN101589181B CN 101589181 B CN101589181 B CN 101589181B CN 2007800502434 A CN2007800502434 A CN 2007800502434A CN 200780050243 A CN200780050243 A CN 200780050243A CN 101589181 B CN101589181 B CN 101589181B
Authority
CN
China
Prior art keywords
temperature
nanoparticles
reaction
nucleation
precursor solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800502434A
Other languages
English (en)
Chinese (zh)
Other versions
CN101589181A (zh
Inventor
F·劳舍尔
V·哈弗坎普
B·亨宁杰
L·姆莱齐科
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quantum Materials Inc
Original Assignee
Bayer Technology Services GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer Technology Services GmbH filed Critical Bayer Technology Services GmbH
Publication of CN101589181A publication Critical patent/CN101589181A/zh
Application granted granted Critical
Publication of CN101589181B publication Critical patent/CN101589181B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Colloid Chemistry (AREA)
CN2007800502434A 2006-11-21 2007-11-08 用于合成含纳米级金属的纳米颗粒和纳米颗粒分散体的方法 Expired - Fee Related CN101589181B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006055218A DE102006055218A1 (de) 2006-11-21 2006-11-21 Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion
DE102006055218.0 2006-11-21
PCT/EP2007/009677 WO2008061632A1 (de) 2006-11-21 2007-11-08 Verfahren zur synthese von nanoskaligen metallhaltigen nanopartikel und nanopartikeldispersionen

Publications (2)

Publication Number Publication Date
CN101589181A CN101589181A (zh) 2009-11-25
CN101589181B true CN101589181B (zh) 2013-04-24

Family

ID=38984078

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800502434A Expired - Fee Related CN101589181B (zh) 2006-11-21 2007-11-08 用于合成含纳米级金属的纳米颗粒和纳米颗粒分散体的方法

Country Status (10)

Country Link
US (1) US7833506B2 (enExample)
EP (1) EP2106464B1 (enExample)
JP (2) JP5324459B2 (enExample)
KR (1) KR20090082288A (enExample)
CN (1) CN101589181B (enExample)
CA (1) CA2669883C (enExample)
DE (1) DE102006055218A1 (enExample)
IL (1) IL198733A (enExample)
TW (1) TWI443236B (enExample)
WO (1) WO2008061632A1 (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101054747B1 (ko) * 2007-10-18 2011-08-05 주식회사 엘지화학 환원제를 이용한 ６ａ족 원소를 포함하는 화합물의제조방법
GB2457314A (en) 2008-02-11 2009-08-12 Ct Angewandte Nanotech Can Apparatus and method for the manufacture of nanoparticles
KR101078050B1 (ko) * 2008-10-27 2011-10-31 한국기계연구원 양자점 제조 장치 및 양자점 제조 방법
DE102009015470A1 (de) 2008-12-12 2010-06-17 Byk-Chemie Gmbh Verfahren zur Herstellung von Metallnanopartikeln und auf diese Weise erhaltene Metallnanopartikel und ihre Verwendung
EP2208526A1 (en) 2008-12-30 2010-07-21 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. An autosynthesizer for the controlled synthesis of nano- and sub-nanostructures
US8834965B2 (en) * 2009-02-12 2014-09-16 Xerox Corporation Organoamine stabilized silver nanoparticles and process for producing same
JP5333069B2 (ja) * 2009-09-01 2013-11-06 株式会社村田製作所 化合物半導体微粒子の製造方法
US20110076839A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Making films composed of semiconductor nanocrystals
JP5563329B2 (ja) * 2010-02-16 2014-07-30 株式会社新光化学工業所 金属ナノ粒子およびその製造方法
KR101698762B1 (ko) 2010-04-30 2017-01-23 삼성에스디아이 주식회사 리튬 전이금속 인산염의 제조방법
US8801979B2 (en) 2010-06-10 2014-08-12 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Apparatus and method for continuous production of materials
WO2012025548A1 (en) 2010-08-27 2012-03-01 Solvay Sa Process for the preparation of alkenones
JP5818196B2 (ja) * 2010-09-01 2015-11-18 株式会社 ナノ・キューブ・ジャパン 酸化スズ超微粒子の製造方法
WO2012035005A1 (en) 2010-09-14 2012-03-22 Bayer Technology Services Gmbh Multistage surface modification procedure of semiconducting nanoparticles for use in hybrid solar cells and printable electronics
US8663522B2 (en) * 2011-02-17 2014-03-04 Massachusetts Institute Of Technology Fiber draw synthesis
WO2012163976A1 (en) 2011-06-03 2012-12-06 Bayer Intellectual Property Gmbh Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
WO2012162858A1 (zh) * 2011-06-03 2012-12-06 拜尔技术工程（上海）有限公司 一种稀土掺杂荧光纳米粒子及其溶液的制备方法和系统
WO2012168192A2 (en) 2011-06-07 2012-12-13 Bayer Intellectual Property Gmbh Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification.
GB2494659A (en) * 2011-09-14 2013-03-20 Sharp Kk Nitride nanoparticles with high quantum yield and narrow luminescence spectrum.
EP2599898A1 (en) 2011-12-01 2013-06-05 Bayer Intellectual Property GmbH Continuous synthesis of high quantum yield InP/ZnS nanocrystals
EP2664607A1 (en) 2012-05-16 2013-11-20 Solvay Sa Fluorination process
US8920766B2 (en) * 2012-08-21 2014-12-30 University Of Rochester Quantum nanostructures, compositions thereof, and methods of making and using same
WO2014153266A2 (en) * 2013-03-14 2014-09-25 Shoei Electronic Materials, Inc. Continuous flow reactor for the synthesis of nanoparticles
USRE48454E1 (en) 2013-03-14 2021-03-02 Shoei Electronic Materials, Inc. Continuous flow reactor for the synthesis of nanoparticles
CN108048084B (zh) * 2013-03-15 2021-03-23 纳米技术有限公司 第iii-v族/锌硫属化物合金化的半导体量子点
US9751071B2 (en) 2013-12-27 2017-09-05 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Continuous microwave-assisted segmented flow reactor for high-quality nanocrystal synthesis
JP6493901B2 (ja) * 2014-05-22 2019-04-03 国立研究開発法人産業技術総合研究所 有機半導体微粒子分散液の製造方法
JP5888821B2 (ja) * 2014-06-09 2016-03-22 株式会社新光化学工業所 金属ナノ粒子およびその製造方法
CN107949542B (zh) * 2015-07-23 2021-03-16 昭荣化学工业株式会社 金属氧化物纳米晶体的制造方法、多元素氧化物纳米晶体的制造方法和金属氧化物纳米晶体
CN105460903B (zh) * 2015-09-22 2016-11-23 苏州星烁纳米科技有限公司 一种纳米晶体制备方法、纳米晶体及气体溶液的制备和保存装置
JP2016000867A (ja) * 2015-10-05 2016-01-07 株式会社新光化学工業所 金属ナノ粒子およびその製造方法
US10815424B2 (en) 2015-12-31 2020-10-27 Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. One-step process for synthesis of core shell nanocrystals
US20180273844A1 (en) * 2015-12-31 2018-09-27 Dow Global Technologies Llc Continuous flow syntheses of nanostructure materials
US10369538B2 (en) 2015-12-31 2019-08-06 Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. Flow system and process for photoluminescent nanoparticle production
CN108057898A (zh) * 2016-11-08 2018-05-22 高勇谦 一种高度可控金属纳米线的连续自动化合成方法
EP3604215A4 (en) 2017-03-28 2020-02-26 Fujifilm Corporation GROUP (III) - (V) SEMICONDUCTOR NANOPARTICLE PRODUCTION METHOD, GROUP (III) - (V) SEMICONDUCTOR QUANTIC POINT PRODUCTION METHOD, AND FLOW REACTION SYSTEM
CN106952705A (zh) * 2017-03-30 2017-07-14 中国人民解放军装甲兵工程学院 一种再分散性优越的磁流变液及其湿式制备方法
JP6442715B2 (ja) * 2017-04-28 2018-12-26 エム・テクニック株式会社 微粒子の製造方法
KR102008875B1 (ko) * 2017-12-26 2019-08-08 주식회사 포스코 농도 구배 전구체의 제조 장치 및 그 재료 투입 스케줄링 방법
JP7196728B2 (ja) * 2019-03-28 2022-12-27 昭栄化学工業株式会社 粒子の製造方法及び粒子製造装置
WO2020219370A1 (en) * 2019-04-20 2020-10-29 Trustees Of Dartmouth College Method and apparatus for magnetic nanoparticles development with ultra-small size, uniformity and monodispersity
JP7643835B2 (ja) * 2020-03-30 2025-03-11 ノリタケ株式会社 金属ナノ粒子の製造方法
GB202008101D0 (en) * 2020-05-29 2020-07-15 Ucl Business Ltd Synthesis of nanoparticles
CN113000851B (zh) * 2021-01-28 2023-04-18 南开大学 一种利用微通道反应器制备粒径可控超顺磁性纳米铁的方法
JP2023061896A (ja) * 2021-10-20 2023-05-02 財團法人工業技術研究院 コアシェル型量子ドットの調製装置および調製方法
IT202200001577A1 (it) * 2022-01-31 2023-07-31 Consiglio Nazionale Ricerche Process for the production of nanocrystals of metal chalcohalides
CN114957732B (zh) * 2022-05-31 2025-08-12 浙江大学 一种基于微反应器系统的生物相容纳米团聚体颗粒制备方法
CN116425195B (zh) * 2023-04-14 2024-10-29 安徽精卓光显技术有限责任公司 一种化合物半导体纳米材料及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004202406A (ja) * 2002-12-26 2004-07-22 Dainippon Printing Co Ltd 半導体超微粒子の製造方法および製造装置
EP1452225A1 (en) * 2003-02-26 2004-09-01 National Institute of Advanced Industrial Science and Technology Preparation of nanoparticles
CN1552547A (zh) * 2003-06-05 2004-12-08 中国科学院理化技术研究所 立方体银纳米晶颗粒的制备方法
CN1710154A (zh) * 2005-04-22 2005-12-21 吉林大学 温和条件下水相快速合成CdTe纳米晶的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9518910D0 (en) 1995-09-15 1995-11-15 Imperial College Process
EP0912238B1 (en) 1996-07-15 2001-10-10 CalCiTech Ltd. Production of powders
US6179312B1 (en) 1997-03-14 2001-01-30 Freightliner Llc Retractable stairway for entering and exiting a vehicle
EP1250474B1 (en) 1999-07-26 2005-10-26 Massachusetts Institute of Technology Tellurium-containing nanocrystalline materials
US20020083888A1 (en) 2000-12-28 2002-07-04 Zehnder Donald A. Flow synthesis of quantum dot nanocrystals
JP2003193119A (ja) * 2001-12-20 2003-07-09 Fuji Photo Film Co Ltd ナノ粒子の製造方法および該ナノ粒子含有分散液の調製方法
JP4058267B2 (ja) * 2001-12-20 2008-03-05 富士フイルム株式会社 ナノ粒子の製造方法および該ナノ粒子含有分散液の調製方法
JP3740528B2 (ja) * 2002-02-05 2006-02-01 独立行政法人産業技術総合研究所 微細粒子製造方法
US6929591B2 (en) * 2002-12-16 2005-08-16 Macdonald, Dettwiler And Associates Inc. Tool storage holster
US7393516B2 (en) * 2003-01-31 2008-07-01 Seo Dong-Kyun Preparation of metal chalcogenides from reactions of metal compounds and chalcogen
US20050016851A1 (en) * 2003-07-24 2005-01-27 Jensen Klavs F. Microchemical method and apparatus for synthesis and coating of colloidal nanoparticles
US7229497B2 (en) 2003-08-26 2007-06-12 Massachusetts Institute Of Technology Method of preparing nanocrystals
US7998271B2 (en) 2003-11-19 2011-08-16 William Marsh Rice Universtiy Solvents and new method for the synthesis of CdSe semiconductor nanocrystals
CA2491144C (en) * 2003-12-30 2013-06-11 National Research Council Of Canada Method of synthesizing colloidal nanocrystals

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004202406A (ja) * 2002-12-26 2004-07-22 Dainippon Printing Co Ltd 半導体超微粒子の製造方法および製造装置
EP1452225A1 (en) * 2003-02-26 2004-09-01 National Institute of Advanced Industrial Science and Technology Preparation of nanoparticles
CN1552547A (zh) * 2003-06-05 2004-12-08 中国科学院理化技术研究所 立方体银纳米晶颗粒的制备方法
CN1710154A (zh) * 2005-04-22 2005-12-21 吉林大学 温和条件下水相快速合成CdTe纳米晶的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Hiroyuki Nakamura et al.《Application of a microfluidic reaction system for CdSe nanocrystal preparation: their growth kinetics and photoluminescence analysis》.《Lab Chip》.2004,第4卷(第3期),237-240. *

Also Published As

Publication number Publication date
US7833506B2 (en) 2010-11-16
US20090295005A1 (en) 2009-12-03
TWI443236B (zh) 2014-07-01
IL198733A0 (en) 2010-02-17
KR20090082288A (ko) 2009-07-29
DE102006055218A1 (de) 2008-05-29
JP2014004576A (ja) 2014-01-16
IL198733A (en) 2013-10-31
TW200839042A (en) 2008-10-01
CN101589181A (zh) 2009-11-25
EP2106464A1 (de) 2009-10-07
EP2106464B1 (de) 2018-12-26
JP2010510056A (ja) 2010-04-02
JP5324459B2 (ja) 2013-10-23
WO2008061632A1 (de) 2008-05-29
CA2669883C (en) 2016-05-03
CA2669883A1 (en) 2008-05-29

Similar Documents

Publication Publication Date Title
CN101589181B (zh) 用于合成含纳米级金属的纳米颗粒和纳米颗粒分散体的方法
US7229497B2 (en) Method of preparing nanocrystals
US8101021B2 (en) Flow method and reactor for manufacturing nanocrystals
Ethayaraja et al. CdS− ZnS core− shell nanoparticle formation: Experiment, mechanism, and simulation
Yarema et al. Upscaling colloidal nanocrystal hot-injection syntheses via reactor underpressure
US6179912B1 (en) Continuous flow process for production of semiconductor nanocrystals
CN101939093B (zh) 制造纳米粒子的反应器
JP5721134B2 (ja) マイクロリアクター
Yang et al. Synthesis and characterization of ZnSe nanocrystals by W/O reverse microemulsion method: the effect of cosurfactant
Yang et al. Continuous synthesis of full-color emitting core/shell quantum dots via microreaction
Luan et al. Open-to-air synthesis of monodisperse CdSe nanocrystals via microfluidic reaction andits kinetics
Yang et al. High-temperature synthesis of CdSe nanocrystals in a serpentine microchannel: wide size tunability achieved under a short residence time
Liu et al. Formation of “steady size” state for accurate size control of CdSe and CdS quantum dots
Han et al. Growth kinetics of aqueous CdTe nanocrystals in the presence of simple amines
Zhang et al. Understanding the “Tailoring Synthesis” of CdS nanorods by O2
EP1452225A1 (en) Preparation of nanoparticles
Kim et al. Large-scale continuous synthesis of CdS quantum dots using an impinging jet mixer
WO2012163976A1 (en) Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
US20060240590A1 (en) Controlled synthesis of nanowires, nanodiscs, and nanostructured materials using liquid crystalline templates
Korotcenkov et al. Synthesis of II-VI Semiconductor Nanocrystals
Liu et al. Nanoparticulate materials and core/shell structures derived from wet chemistry methods
Lesnyak Large-Scale Colloidal Synthesis of Nanoparticles
Yang et al. Large-Scale Synthesis of Monodisperse Nanocrystals via Microreaction
Karanikolos Templating the synthesis of compound semiconductor nanostructures using microemulsions and lyotropic liquid crystals
Han Ki-Joong Kim, Chang-Ho Choi

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: BAYER INTELLECTUAL PROPERTY GMBH

Free format text: FORMER OWNER: BAYER AG

Effective date: 20130813

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20130813

Address after: German Monheim

Patentee after: Bayer Pharma Aktiengesellschaft

Address before: Germany Leverkusen

Patentee before: Bayer Ag

ASS Succession or assignment of patent right

Owner name: QUANTUM MATERIALS, INC.

Free format text: FORMER OWNER: BAYER INTELLECTUAL PROPERTY GMBH

Effective date: 20150605

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20150605

Address after: American Texas

Patentee after: Quantum Materials, Inc.

Address before: German Monheim

Patentee before: Bayer Pharma Aktiengesellschaft

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130424

Termination date: 20191108

CF01 Termination of patent right due to non-payment of annual fee