BR112021024998A2 - Dispositivo eletrônico e método de utilizar seu espaço de armazenamento - Google Patents

Dispositivo eletrônico e método de utilizar seu espaço de armazenamento

Info

Publication number
BR112021024998A2
BR112021024998A2 BR112021024998A BR112021024998A BR112021024998A2 BR 112021024998 A2 BR112021024998 A2 BR 112021024998A2 BR 112021024998 A BR112021024998 A BR 112021024998A BR 112021024998 A BR112021024998 A BR 112021024998A BR 112021024998 A2 BR112021024998 A2 BR 112021024998A2
Authority
BR
Brazil
Prior art keywords
storage
space
volatile memory
electronic device
utilizing
Prior art date
Application number
BR112021024998A
Other languages
English (en)
Inventor
Jintae Jang
Junwoo Lee
Wonsuk Jung
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of BR112021024998A2 publication Critical patent/BR112021024998A2/pt

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061Improving I/O performance
    • G06F3/0611Improving I/O performance in relation to response time
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • G06F1/28Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • G06F1/32Means for saving power
    • G06F1/3203Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3206Monitoring of events, devices or parameters that trigger a change in power modality
    • G06F1/3215Monitoring of peripheral devices
    • G06F1/3225Monitoring of peripheral devices of memory devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • G06F1/32Means for saving power
    • G06F1/3203Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234Power saving characterised by the action undertaken
    • G06F1/325Power saving in peripheral device
    • G06F1/3275Power saving in memory, e.g. RAM, cache
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • G06F1/32Means for saving power
    • G06F1/3203Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234Power saving characterised by the action undertaken
    • G06F1/3296Power saving characterised by the action undertaken by lowering the supply or operating voltage
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/08Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0866Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches for peripheral storage systems, e.g. disk cache
    • G06F12/0868Data transfer between cache memory and other subsystems, e.g. storage devices or host systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604Improving or facilitating administration, e.g. storage management
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604Improving or facilitating administration, e.g. storage management
    • G06F3/0605Improving or facilitating administration, e.g. storage management by facilitating the interaction with a user or administrator
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061Improving I/O performance
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0625Power saving in storage systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0656Data buffering arrangements
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0658Controller construction arrangements
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659Command handling arrangements, e.g. command buffers, queues, command scheduling
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0673Single storage device
    • G06F3/0679Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10Providing a specific technical effect
    • G06F2212/1016Performance improvement
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10Providing a specific technical effect
    • G06F2212/1056Simplification
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/21Employing a record carrier using a specific recording technology
    • G06F2212/214Solid state disk
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/31Providing disk cache in a specific location of a storage system
    • G06F2212/313In storage device
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7203Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7204Capacity control, e.g. partitioning, end-of-life degradation
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7206Reconfiguration of flash memory system
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/50Reducing energy consumption in communication networks in wire-line communication networks, e.g. low power modes or reduced link rate

Abstract

dispositivo eletrônico e método de utilizar seu espaço de armazenamento. as várias concretizações revelam um dispositivo eletrônico incluindo: um armazenamento incluindo uma memória não volátil tendo um espaço de buffer e um espaço de armazenamento, um controlador do dispositivo de armazenamento e uma interface de armazenamento e um processador. de acordo com várias concretizações, o processador pode ser configurado para executar controle para determinar se o armazenamento suporta um modo de armazenamento de dados em alta velocidade utilizando um espaço de buffer de uma memória não volátil do armazenamento, ativar uma função de gravar dados armazenados em buffer no espaço de buffer da memória não volátil dentro de um espaço de armazenamento da memória não volátil com base na interface de armazenamento operando em um primeiro estado com base no armazenamento suportando o modo de armazenamento de dados em alta velocidade, e fazer a transição da interface de armazenamento do armazenamento para o primeiro estado com base em nenhuma solicitação para o armazenamento sendo gerado durante um período de tempo predeterminado com base na interface de armazenamento operando em um segundo estado.
BR112021024998A 2019-06-12 2020-05-26 Dispositivo eletrônico e método de utilizar seu espaço de armazenamento BR112021024998A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190069161A KR20200142219A (ko) 2019-06-12 2019-06-12 전자 장치 및 그의 저장 공간 이용 방법
PCT/KR2020/006801 WO2020251192A1 (en) 2019-06-12 2020-05-26 Electronic device and method of utilizing storage space thereof

Publications (1)

Publication Number Publication Date
BR112021024998A2 true BR112021024998A2 (pt) 2022-01-25

Family

ID=71094088

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112021024998A BR112021024998A2 (pt) 2019-06-12 2020-05-26 Dispositivo eletrônico e método de utilizar seu espaço de armazenamento

Country Status (8)

Country Link
US (2) US11392318B2 (pt)
EP (2) EP3751407B1 (pt)
KR (1) KR20200142219A (pt)
CN (2) CN114968093A (pt)
BR (1) BR112021024998A2 (pt)
ES (1) ES2965751T3 (pt)
WO (1) WO2020251192A1 (pt)
ZA (1) ZA202110284B (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11119659B2 (en) * 2019-08-12 2021-09-14 Micron Technology, Inc. Write buffer implementation for multiple memory array memory spaces
TWI739676B (zh) * 2020-11-25 2021-09-11 群聯電子股份有限公司 記憶體控制方法、記憶體儲存裝置及記憶體控制電路單元
CN114168076A (zh) * 2021-12-06 2022-03-11 陕西空天动力研究院有限公司 一种数据存储方法、装置及系统
TWI793932B (zh) * 2021-12-21 2023-02-21 建興儲存科技股份有限公司 固態儲存裝置及其相關的寫入控制方法

Family Cites Families (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040160968A1 (en) 2003-02-12 2004-08-19 Chae-Ho Ko Method for interconnecting of system for interconnecting wired and wireless phone services
US7788427B1 (en) * 2005-05-05 2010-08-31 Marvell International Ltd. Flash memory interface for disk drive
KR101086072B1 (ko) 2004-09-18 2011-11-22 삼성전자주식회사 Agps 정보를 이용한 단말 위치 결정 방법
KR100666174B1 (ko) 2005-04-27 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
US8055833B2 (en) 2006-10-05 2011-11-08 Google Inc. System and method for increasing capacity, performance, and flexibility of flash storage
KR100634458B1 (ko) 2005-07-04 2006-10-16 삼성전자주식회사 단일의 페이지 버퍼 구조로 멀티-비트 및 단일-비트프로그램 동작을 수행하는 플래시 메모리 장치
KR101257848B1 (ko) 2005-07-13 2013-04-24 삼성전자주식회사 복합 메모리를 구비하는 데이터 저장 시스템 및 그 동작방법
JP2007193866A (ja) 2006-01-17 2007-08-02 Toshiba Corp 情報記録装置及びその制御方法
US8478287B2 (en) 2006-06-07 2013-07-02 Samsung Electronics Co., Ltd. Method for positioning target terminal while protecting privacy of user thereof
KR101223788B1 (ko) 2006-06-09 2013-01-17 삼성전자주식회사 위치 정보 제공 시스템의 목표단말기 위치값 제공 방법
KR100809320B1 (ko) 2006-09-27 2008-03-05 삼성전자주식회사 이종 셀 타입을 지원하는 비휘발성 메모리를 위한 맵핑정보 관리 장치 및 방법
KR100855467B1 (ko) 2006-09-27 2008-09-01 삼성전자주식회사 이종 셀 타입을 지원하는 비휘발성 메모리를 위한 맵핑장치 및 방법
KR100771521B1 (ko) 2006-10-30 2007-10-30 삼성전자주식회사 멀티 레벨 셀을 포함하는 플래시 메모리 장치 및 그것의데이터 쓰기 방법
KR100833188B1 (ko) 2006-11-03 2008-05-28 삼성전자주식회사 데이터의 특성에 따라 싱글 레벨 셀 또는 멀티 레벨 셀에데이터를 저장하는 불휘발성 메모리 시스템
US7852654B2 (en) 2006-12-28 2010-12-14 Hynix Semiconductor Inc. Semiconductor memory device, and multi-chip package and method of operating the same
KR100875539B1 (ko) 2007-01-17 2008-12-26 삼성전자주식회사 프로그램 방식을 선택할 수 있는 메모리 시스템
KR100855972B1 (ko) 2007-01-23 2008-09-02 삼성전자주식회사 서로 다른 독출 대기 시간을 가지는 복수개의 메모리 셀어레이들을 구비하는 불휘발성 메모리 시스템 및 상기불휘발성 메모리 시스템의 데이터 독출 방법
KR100819102B1 (ko) 2007-02-06 2008-04-03 삼성전자주식회사 개선된 멀티 페이지 프로그램 동작을 갖는 불휘발성 반도체메모리 장치
JP2008225916A (ja) * 2007-03-13 2008-09-25 Fujitsu Ltd データバックアップ時の電力低減装置
KR100890017B1 (ko) 2007-04-23 2009-03-25 삼성전자주식회사 프로그램 디스터브를 감소시킬 수 있는 플래시 메모리 장치및 그것의 프로그램 방법
WO2008140171A1 (en) 2007-05-14 2008-11-20 Samsung Electronics Co., Ltd. Apparatus for reading data and method using the same
KR100892583B1 (ko) 2007-06-08 2009-04-08 삼성전자주식회사 커플링을 고려한 메모리 셀의 데이터 프로그램 장치 및 그방법
KR100838292B1 (ko) 2007-06-20 2008-06-17 삼성전자주식회사 메모리 셀의 읽기 레벨 제어 장치 및 그 방법
KR101301774B1 (ko) 2007-07-23 2013-09-02 삼성전자주식회사 메모리 셀의 데이터 읽기 장치 및 방법
US8429358B2 (en) 2007-08-14 2013-04-23 Samsung Electronics Co., Ltd. Method and data storage device for processing commands
KR101498673B1 (ko) 2007-08-14 2015-03-09 삼성전자주식회사 반도체 드라이브, 그것의 데이터 저장 방법, 그리고 그것을포함한 컴퓨팅 시스템
KR101382562B1 (ko) 2007-08-24 2014-04-10 삼성전자주식회사 복수개의 뱅크들을 동시에 프로그램할 수 있는 반도체메모리 장치 및 방법
US8706951B2 (en) * 2008-07-18 2014-04-22 Marvell World Trade Ltd. Selectively accessing faster or slower multi-level cell memory
KR101548175B1 (ko) 2008-11-05 2015-08-28 삼성전자주식회사 싱글 레벨 메모리 셀 블락과 멀티 레벨 메모리 셀 블락을 포함하는 불휘발성 메모리 장치의 마모 레벨링 방법
KR101515098B1 (ko) 2008-11-20 2015-04-24 삼성전자주식회사 플래시 메모리 장치 및 이의 독출 방법
US8239724B2 (en) 2009-04-08 2012-08-07 Google Inc. Error correction for a data storage device
US8402243B2 (en) 2010-02-25 2013-03-19 Apple Inc. Dynamically allocating number of bits per cell for memory locations of a non-volatile memory
US9063728B2 (en) 2010-03-17 2015-06-23 Apple Inc. Systems and methods for handling hibernation data
KR101678407B1 (ko) 2010-05-10 2016-11-23 삼성전자주식회사 데이터 저장 장치 및 그것의 프로그램 방법
KR101662827B1 (ko) 2010-07-02 2016-10-06 삼성전자주식회사 쓰기 패턴에 따라 데이터 블록의 쓰기 모드를 선택하는 메모리 시스템 및 그것의 데이터 쓰기 방법
US8832507B2 (en) 2010-08-23 2014-09-09 Apple Inc. Systems and methods for generating dynamic super blocks
TWI451435B (zh) * 2010-10-08 2014-09-01 Phison Electronics Corp 非揮發性記憶體儲存裝置、記憶體控制器與資料儲存方法
KR101727553B1 (ko) 2010-11-04 2017-04-17 삼성전자주식회사 휴대용 단말기에서 다수의 블루투스 기기와 통신하기 위한 장치 및 방법
KR101699786B1 (ko) 2010-11-25 2017-01-26 삼성전자주식회사 위치 서비스 기반 시스템에서 센서노드의 측위를 위한 장치 및 방법
US8886990B2 (en) 2011-01-27 2014-11-11 Apple Inc. Block management schemes in hybrid SLC/MLC memory
KR20120126389A (ko) 2011-05-11 2012-11-21 삼성전자주식회사 멀티-비트 메모리 장치를 포함한 데이터 저장 시스템 및 그것의 온칩 버퍼 프로그램 방법
KR101861170B1 (ko) 2011-08-17 2018-05-25 삼성전자주식회사 마이그레이션 관리자를 포함하는 메모리 시스템
KR101903091B1 (ko) 2011-10-05 2018-10-02 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 동작 방법
KR101919902B1 (ko) 2011-10-18 2018-11-20 삼성전자 주식회사 메모리 장치의 데이터 독출 방법
KR20130043474A (ko) 2011-10-20 2013-04-30 에스케이하이닉스 주식회사 통합 메모리 블록 및 이를 포함하는 데이터 처리 시스템
KR101845510B1 (ko) 2011-10-25 2018-04-05 삼성전자주식회사 반도체 저장 장치 및 시스템
KR20130049330A (ko) 2011-11-04 2013-05-14 삼성전자주식회사 메모리 시스템 및 그것의 메모리 관리 기법
KR20130049332A (ko) 2011-11-04 2013-05-14 삼성전자주식회사 메모리 시스템 및 그것의 동작 방법
KR101874408B1 (ko) 2011-11-09 2018-07-05 삼성전자주식회사 비휘발성 메모리 장치 및 이를 포함하는 메모리 시스템
KR101813182B1 (ko) 2011-11-16 2017-12-29 삼성전자주식회사 비휘발성 메모리 소자를 포함하는 다치 논리 장치
KR102049306B1 (ko) 2011-12-12 2019-11-27 삼성전자주식회사 메모리 셀의 리드 또는 라이트 동작 방법 과 장치 및 이를 포함하는 메모리 시스템
US9251055B2 (en) * 2012-02-23 2016-02-02 Kabushiki Kaisha Toshiba Memory system and control method of memory system
US8935459B2 (en) 2012-03-08 2015-01-13 Apple Inc. Heuristics for programming data in a non-volatile memory
KR101967895B1 (ko) 2012-05-02 2019-04-11 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 구동 방법
KR101959567B1 (ko) 2012-05-14 2019-03-18 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
US20150160999A1 (en) 2012-07-13 2015-06-11 Samsung Electronics Co., Ltd. Solid state drive controller, solid state drive, data processing method of solid state drive, multi-channel solid state drive, raid controller and computer-readable recording medium having recorded therein computer program for providing sequence information to solid state drive
KR102083271B1 (ko) 2012-07-31 2020-03-02 삼성전자주식회사 플래시 메모리의 물리적 특성을 이용하여 난수를 생성하는 플래시 메모리 시스템 및 그것의 난수 생성 방법
US8942754B2 (en) * 2012-08-07 2015-01-27 Sharp Laboratories Of America, Inc. Devices for allocating power for uplink transmission
KR20140033964A (ko) 2012-09-11 2014-03-19 삼성전자주식회사 단말기의 데이터 저장장치 및 방법
TWI493447B (zh) * 2013-01-18 2015-07-21 Acer Inc 雙碟式資料快取方法及系統
US8990458B2 (en) 2013-02-28 2015-03-24 Kabushiki Kaisha Toshiba Controller, semiconductor storage device and method of controlling data writing
KR102081415B1 (ko) 2013-03-15 2020-02-25 삼성전자주식회사 비휘발성 메모리 장치의 llr 최적화 방법 및 비휘발성 메모리 장치의 에러 정정 방법
BR122016006764B1 (pt) * 2013-03-15 2022-02-01 Intel Corporation Aparelhos e métodos de memória
KR102098246B1 (ko) 2013-04-29 2020-04-07 삼성전자 주식회사 호스트, 저장 장치, 및 이를 포함하는 시스템의 동작 방법
US9727493B2 (en) * 2013-08-14 2017-08-08 Micron Technology, Inc. Apparatuses and methods for providing data to a configurable storage area
US20150074490A1 (en) 2013-09-06 2015-03-12 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
KR102190399B1 (ko) 2013-10-11 2020-12-11 삼성전자주식회사 신뢰성을 보장할 수 있는 불휘발성 메모리 장치의 동작 방법 및 상기 방법을 수행하는 메모리 시스템
KR102127105B1 (ko) 2013-11-11 2020-06-29 삼성전자 주식회사 비휘발성 메모리 장치의 구동 방법
US9326298B2 (en) * 2013-11-15 2016-04-26 Verizon Patent And Licensing Inc. Wireless device background uplink small data packet
KR102140792B1 (ko) 2013-12-24 2020-08-03 삼성전자주식회사 데이터 중복 제거를 수행할 수 있는 데이터 저장 장치의 동작 방법들
KR102100161B1 (ko) 2014-02-04 2020-04-14 삼성전자주식회사 Gpu 데이터 캐싱 방법 및 그에 따른 데이터 프로세싱 시스템
KR102190670B1 (ko) 2014-03-03 2020-12-14 삼성전자주식회사 마이그레이션 관리자를 포함하는 메모리 시스템
KR102289919B1 (ko) 2014-04-15 2021-08-12 삼성전자주식회사 스토리지 컨트롤러, 스토리지 장치, 스토리지 시스템 및 상기 스토리지 컨트롤러의 동작 방법
US20160103478A1 (en) * 2014-10-08 2016-04-14 Kabushiki Kaisha Toshiba Memory system and memory controller
KR102287760B1 (ko) 2014-10-29 2021-08-09 삼성전자주식회사 메모리 시스템 및 상기 메모리 시스템의 동작 방법
KR20160058458A (ko) 2014-11-17 2016-05-25 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
KR102295208B1 (ko) 2014-12-19 2021-09-01 삼성전자주식회사 프로그램 영역을 동적으로 할당하는 저장 장치 및 그것의 프로그램 방법
KR102295223B1 (ko) * 2015-01-13 2021-09-01 삼성전자주식회사 속도 모드 관리자를 포함하는 저장 장치 및 사용자 장치
US9558839B2 (en) 2015-03-09 2017-01-31 Toshiba Corporation Power fail saving modes in solid state drive with MLC memory
US10008250B2 (en) * 2015-03-27 2018-06-26 Intel Corporation Single level cell write buffering for multiple level cell non-volatile memory
US11010054B1 (en) * 2015-06-10 2021-05-18 EMC IP Holding Company LLC Exabyte-scale data processing system
KR102274280B1 (ko) 2015-06-22 2021-07-07 삼성전자주식회사 불휘발성 메모리 장치의 동작 방법
US20170024278A1 (en) 2015-07-24 2017-01-26 Samsung Electronics Co., Ltd. Method and apparatus for encoding and decoding data in memory system
KR102379202B1 (ko) 2015-09-30 2022-03-28 삼성전자주식회사 전자 장치 및 그 부팅 방법
KR20170046862A (ko) 2015-10-21 2017-05-04 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
US20170161202A1 (en) 2015-12-02 2017-06-08 Samsung Electronics Co., Ltd. Flash memory device including address mapping for deduplication, and related methods
TWI672706B (zh) 2015-12-14 2019-09-21 南韓商愛思開海力士有限公司 記憶體儲存裝置及其操作方法
US9996268B2 (en) 2015-12-18 2018-06-12 Toshiba Memory Corporation Memory system and control method of the same
US10572651B2 (en) 2016-02-16 2020-02-25 Samsung Electronics Co., Ltd. Key generating method and apparatus using characteristic of memory
US9990023B2 (en) 2016-03-28 2018-06-05 Apple Inc. Systems and methods for handling sudden power failures in solid state drives
US20170285967A1 (en) 2016-03-29 2017-10-05 Samsung Electronics Co., Ltd. Multi-ware smart ssd
KR102550343B1 (ko) 2016-07-27 2023-07-03 삼성전자주식회사 솔리드 스테이트 드라이브 장치 및 그것의 동작 방법
US9891859B1 (en) 2016-08-09 2018-02-13 Apple Inc. Systems and methods for managing non-volatile memory based on temperature
KR20180031289A (ko) 2016-09-19 2018-03-28 삼성전자주식회사 스토리지 장치 및 상기 스토리지 장치의 동작 방법
KR102208058B1 (ko) * 2016-11-04 2021-01-27 삼성전자주식회사 저장 장치 및 이를 포함하는 데이터 처리 시스템
KR102319189B1 (ko) 2017-06-21 2021-10-28 삼성전자주식회사 스토리지 장치, 이를 포함하는 스토리지 시스템 및 스토리지 장치의 동작 방법
US10606484B2 (en) 2017-06-23 2020-03-31 Google Llc NAND flash storage device with NAND buffer
KR102427327B1 (ko) 2017-07-25 2022-08-01 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 및 그것을 포함하는 저장 장치
JP7030463B2 (ja) * 2017-09-22 2022-03-07 キオクシア株式会社 メモリシステム
US10705590B2 (en) * 2017-11-28 2020-07-07 Google Llc Power-conserving cache memory usage
US10877686B2 (en) * 2018-04-13 2020-12-29 Intel Corporation Mass storage device with host initiated buffer flushing
US10909040B2 (en) * 2018-04-19 2021-02-02 Intel Corporation Adaptive calibration of nonvolatile memory channel based on platform power management state
CN109471596B (zh) * 2018-10-31 2022-03-18 北京小米移动软件有限公司 数据写入方法、装置、设备及存储介质
KR20210092964A (ko) * 2020-01-17 2021-07-27 삼성전자주식회사 이미지 센서 및 이를 포함하는 카메라 모듈

Also Published As

Publication number Publication date
EP4235442A2 (en) 2023-08-30
US20220350540A1 (en) 2022-11-03
ZA202110284B (en) 2023-10-25
KR20200142219A (ko) 2020-12-22
EP3751407B1 (en) 2023-09-13
CN112083876B (zh) 2022-05-24
EP3751407A1 (en) 2020-12-16
ES2965751T3 (es) 2024-04-16
US11392318B2 (en) 2022-07-19
CN112083876A (zh) 2020-12-15
EP4235442A3 (en) 2023-10-04
WO2020251192A1 (en) 2020-12-17
US20200393995A1 (en) 2020-12-17
CN114968093A (zh) 2022-08-30
EP3751407C0 (en) 2023-09-13
US11704072B2 (en) 2023-07-18

Similar Documents

Publication Publication Date Title
BR112021024998A2 (pt) Dispositivo eletrônico e método de utilizar seu espaço de armazenamento
JP6334828B2 (ja) セルフリフレッシュ省電力モードを有するソリッドステートドライブ
US20130139007A1 (en) Nonvolatile cache memory, processing method of nonvolatile cache memory, and computer system
US10445211B2 (en) Logging trace data for program code execution at an instruction level
US11042469B2 (en) Logging trace data for program code execution at an instruction level
JP2017138852A (ja) 情報処理装置、記憶装置およびプログラム
TW200619971A (en) System with host and storage controller
JP2018504694A (ja) 仮想アドレスを使用してアクセスされるキャッシュ
US11042304B2 (en) Determining a transfer rate for channels of a memory system
US7165165B2 (en) Anticipatory power control of memory
KR20170134704A (ko) 확장 메모리에 대한 액세스 방법, 디바이스 및 시스템
AU2012205187A1 (en) Non-volatile temporary data handling
US10657065B2 (en) Delayed write-back in memory
TW200713034A (en) Preventing multiple translation lookaside buffer accesses for a same page in memory
CN106062724A (zh) 存储器模块上的数据管理
TWI703566B (zh) 快閃記憶體控制器及相關的存取方法及電子裝置
US11775046B2 (en) Static power reduction in caches using deterministic Naps
KR20160125887A (ko) 메모리 관리
US20170031833A1 (en) Hibernation based on page source
US20140052931A1 (en) Data Type Dependent Memory Scrubbing
US8806140B1 (en) Dynamic memory module switching with read prefetch caching
KR20180047481A (ko) 자기 저항 메모리 모듈 및 이를 포함하는 컴퓨팅 디바이스
US20160371189A1 (en) Cache memory and processor system
US20210042220A1 (en) Memory sub-system for managing flash translation layers table updates in response to unmap commands
US9927988B2 (en) Data move engine to move a block of data

Legal Events

Date Code Title Description
B06A Patent application procedure suspended [chapter 6.1 patent gazette]