AU2014294820B2 - Mos-bipolar device - Google Patents
Mos-bipolar device Download PDFInfo
- Publication number
- AU2014294820B2 AU2014294820B2 AU2014294820A AU2014294820A AU2014294820B2 AU 2014294820 B2 AU2014294820 B2 AU 2014294820B2 AU 2014294820 A AU2014294820 A AU 2014294820A AU 2014294820 A AU2014294820 A AU 2014294820A AU 2014294820 B2 AU2014294820 B2 AU 2014294820B2
- Authority
- AU
- Australia
- Prior art keywords
- region
- well
- well region
- trench
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1313126.3A GB201313126D0 (en) | 2013-07-23 | 2013-07-23 | MOS-Bipolar Device |
| GB1313126.3 | 2013-07-23 | ||
| GB1314474.6 | 2013-08-13 | ||
| GBGB1314474.6A GB201314474D0 (en) | 2013-07-23 | 2013-08-13 | MOS-Bipolar device |
| PCT/GB2014/052013 WO2015011440A1 (en) | 2013-07-23 | 2014-07-02 | Mos-bipolar device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU2014294820A1 AU2014294820A1 (en) | 2016-02-11 |
| AU2014294820B2 true AU2014294820B2 (en) | 2018-04-05 |
Family
ID=49119141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2014294820A Active AU2014294820B2 (en) | 2013-07-23 | 2014-07-02 | Mos-bipolar device |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US10170605B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3025373B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6495272B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102173473B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN105706241B (cg-RX-API-DMAC7.html) |
| AU (1) | AU2014294820B2 (cg-RX-API-DMAC7.html) |
| CA (1) | CA2918848A1 (cg-RX-API-DMAC7.html) |
| ES (1) | ES2942334T3 (cg-RX-API-DMAC7.html) |
| GB (3) | GB201313126D0 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2015011440A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016112721B4 (de) | 2016-07-12 | 2022-02-03 | Infineon Technologies Ag | n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen |
| DE102016117264B4 (de) | 2016-09-14 | 2020-10-08 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit Steuerbarkeit von dU/dt |
| DE102017107174B4 (de) | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
| DE102017124871B4 (de) * | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
| DE102017124872B4 (de) | 2017-10-24 | 2021-02-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit |
| GB2606383A (en) | 2021-05-06 | 2022-11-09 | Eco Semiconductors Ltd | A semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090008674A1 (en) * | 2007-07-05 | 2009-01-08 | Florin Udrea | Double gate insulated gate bipolar transistor |
| US20120043581A1 (en) * | 2010-08-17 | 2012-02-23 | Masaki Koyama | Semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4761011B2 (ja) * | 1999-05-26 | 2011-08-31 | 株式会社豊田中央研究所 | サイリスタを有する半導体装置及びその製造方法 |
| GB9921068D0 (en) * | 1999-09-08 | 1999-11-10 | Univ Montfort | Bipolar mosfet device |
| JP4028333B2 (ja) * | 2002-09-02 | 2007-12-26 | 株式会社東芝 | 半導体装置 |
| JP4130356B2 (ja) | 2002-12-20 | 2008-08-06 | 株式会社東芝 | 半導体装置 |
| JP5984282B2 (ja) | 2006-04-27 | 2016-09-06 | 富士電機株式会社 | 縦型トレンチ型絶縁ゲートｍｏｓ半導体装置 |
| JP5634318B2 (ja) | 2011-04-19 | 2014-12-03 | 三菱電機株式会社 | 半導体装置 |
| US8564047B2 (en) | 2011-09-27 | 2013-10-22 | Force Mos Technology Co., Ltd. | Semiconductor power devices integrated with a trenched clamp diode |
-
2013
- 2013-07-23 GB GBGB1313126.3A patent/GB201313126D0/en not_active Ceased
- 2013-08-13 GB GBGB1314474.6A patent/GB201314474D0/en not_active Ceased
- 2013-08-13 GB GBGB1314475.3A patent/GB201314475D0/en active Pending
-
2014
- 2014-07-02 CA CA2918848A patent/CA2918848A1/en not_active Abandoned
- 2014-07-02 JP JP2016528598A patent/JP6495272B2/ja active Active
- 2014-07-02 ES ES14749944T patent/ES2942334T3/es active Active
- 2014-07-02 US US14/906,654 patent/US10170605B2/en active Active
- 2014-07-02 KR KR1020167004755A patent/KR102173473B1/ko active Active
- 2014-07-02 WO PCT/GB2014/052013 patent/WO2015011440A1/en not_active Ceased
- 2014-07-02 EP EP14749944.6A patent/EP3025373B1/en active Active
- 2014-07-02 CN CN201480042128.2A patent/CN105706241B/zh active Active
- 2014-07-02 AU AU2014294820A patent/AU2014294820B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090008674A1 (en) * | 2007-07-05 | 2009-01-08 | Florin Udrea | Double gate insulated gate bipolar transistor |
| US20120043581A1 (en) * | 2010-08-17 | 2012-02-23 | Masaki Koyama | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201314475D0 (en) | 2013-09-25 |
| ES2942334T3 (es) | 2023-05-31 |
| JP6495272B2 (ja) | 2019-04-03 |
| KR20160035029A (ko) | 2016-03-30 |
| GB201313126D0 (en) | 2013-09-04 |
| US20160155831A1 (en) | 2016-06-02 |
| AU2014294820A1 (en) | 2016-02-11 |
| KR102173473B1 (ko) | 2020-11-03 |
| CN105706241B (zh) | 2019-12-31 |
| GB201314474D0 (en) | 2013-09-25 |
| CA2918848A1 (en) | 2015-01-29 |
| US10170605B2 (en) | 2019-01-01 |
| WO2015011440A1 (en) | 2015-01-29 |
| EP3025373B1 (en) | 2022-12-21 |
| CN105706241A (zh) | 2016-06-22 |
| EP3025373A1 (en) | 2016-06-01 |
| JP2016527722A (ja) | 2016-09-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FGA | Letters patent sealed or granted (standard patent) |