ATE543123T1 - Zusammensetzung für eine antireflexive beschichtung - Google Patents
Zusammensetzung für eine antireflexive beschichtungInfo
- Publication number
- ATE543123T1 ATE543123T1 AT08720771T AT08720771T ATE543123T1 AT E543123 T1 ATE543123 T1 AT E543123T1 AT 08720771 T AT08720771 T AT 08720771T AT 08720771 T AT08720771 T AT 08720771T AT E543123 T1 ATE543123 T1 AT E543123T1
- Authority
- AT
- Austria
- Prior art keywords
- atom
- carbon atoms
- linear
- coating composition
- hydrogen atom
- Prior art date
Links
- 239000006117 anti-reflective coating Substances 0.000 title 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract 2
- 229910052801 chlorine Inorganic materials 0.000 abstract 2
- 125000001309 chloro group Chemical group Cl* 0.000 abstract 2
- 239000008199 coating composition Substances 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 2
- 125000001153 fluoro group Chemical group F* 0.000 abstract 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 2
- 239000012736 aqueous medium Substances 0.000 abstract 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 125000006551 perfluoro alkylene group Chemical group 0.000 abstract 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 abstract 1
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 abstract 1
- SNGREZUHAYWORS-UHFFFAOYSA-N perfluorooctanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SNGREZUHAYWORS-UHFFFAOYSA-N 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 abstract 1
- 229920003169 water-soluble polymer Polymers 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Paints Or Removers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007042418 | 2007-02-22 | ||
| PCT/JP2008/052890 WO2008102820A1 (ja) | 2007-02-22 | 2008-02-20 | 反射防止コーティング用組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE543123T1 true ATE543123T1 (de) | 2012-02-15 |
Family
ID=39710094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08720771T ATE543123T1 (de) | 2007-02-22 | 2008-02-20 | Zusammensetzung für eine antireflexive beschichtung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7964659B2 (de) |
| EP (1) | EP2113811B1 (de) |
| JP (1) | JP4962559B2 (de) |
| KR (1) | KR101415430B1 (de) |
| CN (1) | CN101617273B (de) |
| AT (1) | ATE543123T1 (de) |
| TW (1) | TWI421314B (de) |
| WO (1) | WO2008102820A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6071255B2 (ja) * | 2012-06-04 | 2017-02-01 | キヤノン株式会社 | 光硬化物 |
| WO2015080061A1 (ja) * | 2013-11-29 | 2015-06-04 | 旭硝子株式会社 | コーティング用組成物およびフォトレジスト積層体の製造方法 |
| TWI726065B (zh) * | 2016-04-22 | 2021-05-01 | 日商Ａｇｃ股份有限公司 | 塗佈用組成物及光阻積層體之製造方法 |
| CN113913060B (zh) * | 2021-10-19 | 2022-05-03 | 苏州润邦半导体材料科技有限公司 | 一种顶部抗反射涂层组合物 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69214035T2 (de) | 1991-06-28 | 1997-04-10 | Ibm | Reflexionsverminderde Überzüge |
| JP3447342B2 (ja) | 1993-12-01 | 2003-09-16 | シップレーカンパニー エル エル シー | 表面反射防止塗布組成物 |
| JP3491978B2 (ja) | 1994-08-01 | 2004-02-03 | シップレーカンパニー エル エル シー | 表面反射防止塗布組成物 |
| JP2985688B2 (ja) * | 1994-09-21 | 1999-12-06 | 信越化学工業株式会社 | 水溶性膜材料及びパターン形成方法 |
| JP3510003B2 (ja) | 1995-05-01 | 2004-03-22 | クラリアント インターナショナル リミテッド | 反射防止コーティング用組成物 |
| JPH09325500A (ja) | 1996-06-07 | 1997-12-16 | Mitsubishi Chem Corp | 表面反射防止塗布組成物及びパターン形成方法 |
| JP3965740B2 (ja) | 1997-10-24 | 2007-08-29 | 旭硝子株式会社 | コーティング組成物 |
| JP3712043B2 (ja) * | 2000-01-21 | 2005-11-02 | 信越化学工業株式会社 | 高分子化合物、反射防止膜材料及びパターン形成方法 |
| EP1375540A4 (de) * | 2001-02-23 | 2005-12-28 | Daikin Ind Ltd | Ethylenisches fluormonomer mit hydroxyl- oder fluoralkylcarbonylgruppe und durch polymerisation davon erhaltenes fluorpolymer |
| JP3851594B2 (ja) * | 2002-07-04 | 2006-11-29 | Ａｚエレクトロニックマテリアルズ株式会社 | 反射防止コーティング用組成物およびパターン形成方法 |
| KR20050096161A (ko) * | 2003-01-29 | 2005-10-05 | 아사히 가라스 가부시키가이샤 | 코팅 조성물, 반사 방지막, 포토레지스트 및 그것을 사용한패턴 형성 방법 |
| KR100852840B1 (ko) * | 2003-11-19 | 2008-08-18 | 다이킨 고교 가부시키가이샤 | 레지스트 적층체의 형성 방법 |
| TWI362566B (en) | 2004-06-30 | 2012-04-21 | Dainippon Ink & Chemicals | Composition for antireflection coating and pattern forming method |
| JP2006047351A (ja) * | 2004-07-30 | 2006-02-16 | Asahi Glass Co Ltd | フォトレジスト保護膜用組成物、フォトレジスト保護膜およびフォトレジストパターン形成方法 |
| JP4510644B2 (ja) * | 2005-01-11 | 2010-07-28 | 東京応化工業株式会社 | 保護膜形成用材料、積層体およびレジストパターン形成方法 |
| JP4956925B2 (ja) * | 2005-07-13 | 2012-06-20 | 旭硝子株式会社 | ポリテトラフルオロエチレン水性分散液およびその製造方法 |
| JP2007042418A (ja) | 2005-08-03 | 2007-02-15 | Mk Seiko Co Ltd | 発光装置 |
| EP1806621A1 (de) * | 2006-01-08 | 2007-07-11 | Rohm and Haas Electronic Materials LLC | Beschichtungszusammensetzungen für Fotolacke |
| JP4752597B2 (ja) * | 2006-02-14 | 2011-08-17 | ダイキン工業株式会社 | レジスト積層体の形成方法 |
-
2008
- 2008-02-20 CN CN2008800056993A patent/CN101617273B/zh not_active Expired - Fee Related
- 2008-02-20 WO PCT/JP2008/052890 patent/WO2008102820A1/ja active Application Filing
- 2008-02-20 JP JP2009500220A patent/JP4962559B2/ja not_active Expired - Fee Related
- 2008-02-20 AT AT08720771T patent/ATE543123T1/de active
- 2008-02-20 EP EP08720771A patent/EP2113811B1/de not_active Not-in-force
- 2008-02-20 KR KR1020097015933A patent/KR101415430B1/ko active IP Right Grant
- 2008-02-22 TW TW097106342A patent/TWI421314B/zh not_active IP Right Cessation
-
2009
- 2009-08-20 US US12/544,723 patent/US7964659B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2008102820A1 (ja) | 2010-05-27 |
| US20090312471A1 (en) | 2009-12-17 |
| CN101617273B (zh) | 2012-11-28 |
| EP2113811B1 (de) | 2012-01-25 |
| KR101415430B1 (ko) | 2014-08-06 |
| TW200904914A (en) | 2009-02-01 |
| WO2008102820A1 (ja) | 2008-08-28 |
| EP2113811A4 (de) | 2010-08-04 |
| KR20090122201A (ko) | 2009-11-26 |
| JP4962559B2 (ja) | 2012-06-27 |
| CN101617273A (zh) | 2009-12-30 |
| EP2113811A1 (de) | 2009-11-04 |
| US7964659B2 (en) | 2011-06-21 |
| TWI421314B (zh) | 2014-01-01 |
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