WO2008081663A1 - 含フッ素高分子化合物とそれを用いたコーティング用組成物 - Google Patents

含フッ素高分子化合物とそれを用いたコーティング用組成物 Download PDF

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Publication number
WO2008081663A1
WO2008081663A1 PCT/JP2007/072914 JP2007072914W WO2008081663A1 WO 2008081663 A1 WO2008081663 A1 WO 2008081663A1 JP 2007072914 W JP2007072914 W JP 2007072914W WO 2008081663 A1 WO2008081663 A1 WO 2008081663A1
Authority
WO
WIPO (PCT)
Prior art keywords
polymer compound
fluorine
coating composition
containing polymer
same
Prior art date
Application number
PCT/JP2007/072914
Other languages
English (en)
French (fr)
Inventor
Haruhiko Komoriya
Michitaka Ootani
Sunao Koga
Tetsu Taroura
Kazuhiko Maeda
Original Assignee
Central Glass Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Company, Limited filed Critical Central Glass Company, Limited
Publication of WO2008081663A1 publication Critical patent/WO2008081663A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/14—Esterification
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Optics & Photonics (AREA)
  • Polymers & Plastics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)

Abstract

式（１）で表される繰り返し単位 【化６３】 および、式（２）で表される繰り返し単位 【化６４】 を、少なくとも含有する含フッ素高分子化合物が提供される。該高分子は溶媒に溶かしてコーティング組成物とした上で、薄膜として用いたときに、特に優れた性能を発揮する。また、上記高分子化合物がＯＨ基を含有しているとき、該ＯＨ基をアクリロイル化することができ、それによって、より硬度の大きい薄膜を得ることもできる。
PCT/JP2007/072914 2006-12-28 2007-11-28 含フッ素高分子化合物とそれを用いたコーティング用組成物 WO2008081663A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-353902 2006-12-28
JP2006353902 2006-12-28

Publications (1)

Publication Number Publication Date
WO2008081663A1 true WO2008081663A1 (ja) 2008-07-10

Family

ID=39588347

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/072914 WO2008081663A1 (ja) 2006-12-28 2007-11-28 含フッ素高分子化合物とそれを用いたコーティング用組成物

Country Status (2)

Country Link
JP (1) JP5352996B2 (ja)
WO (1) WO2008081663A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107111018A (zh) * 2014-12-30 2017-08-29 3M创新有限公司 防污回射制品

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5428657B2 (ja) * 2009-08-31 2014-02-26 ダイキン工業株式会社 撥液−親液パターニング用トップコート組成物
WO2011161812A1 (ja) * 2010-06-25 2011-12-29 リケンテクノス株式会社 塗料および積層体
KR102126894B1 (ko) * 2013-03-11 2020-06-25 주식회사 동진쎄미켐 리소그래피용 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05238988A (ja) * 1992-02-28 1993-09-17 Shin Etsu Chem Co Ltd 含フッ素有機化合物及びその製造方法
JP2002322214A (ja) * 2001-04-24 2002-11-08 Central Glass Co Ltd 反応性高分子化合物
JP2005037777A (ja) * 2003-07-17 2005-02-10 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2005099157A (ja) * 2003-09-22 2005-04-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2005202205A (ja) * 2004-01-16 2005-07-28 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05238988A (ja) * 1992-02-28 1993-09-17 Shin Etsu Chem Co Ltd 含フッ素有機化合物及びその製造方法
JP2002322214A (ja) * 2001-04-24 2002-11-08 Central Glass Co Ltd 反応性高分子化合物
JP2005037777A (ja) * 2003-07-17 2005-02-10 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2005099157A (ja) * 2003-09-22 2005-04-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2005202205A (ja) * 2004-01-16 2005-07-28 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107111018A (zh) * 2014-12-30 2017-08-29 3M创新有限公司 防污回射制品

Also Published As

Publication number Publication date
JP2008179789A (ja) 2008-08-07
JP5352996B2 (ja) 2013-11-27

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