WO2009051088A1 - スルホン化合物、スルホン酸塩および感放射線性樹脂組成物 - Google Patents

スルホン化合物、スルホン酸塩および感放射線性樹脂組成物 Download PDF

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Publication number
WO2009051088A1
WO2009051088A1 PCT/JP2008/068533 JP2008068533W WO2009051088A1 WO 2009051088 A1 WO2009051088 A1 WO 2009051088A1 JP 2008068533 W JP2008068533 W JP 2008068533W WO 2009051088 A1 WO2009051088 A1 WO 2009051088A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
resin composition
sulfonic acid
acid salt
sensitive resin
Prior art date
Application number
PCT/JP2008/068533
Other languages
English (en)
French (fr)
Inventor
Takuma Ebata
Tomoki Nagai
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to CN200880111642A priority Critical patent/CN101827813A/zh
Priority to KR1020107008086A priority patent/KR101330944B1/ko
Priority to JP2009538082A priority patent/JP5407866B2/ja
Publication of WO2009051088A1 publication Critical patent/WO2009051088A1/ja
Priority to US12/760,509 priority patent/US8440384B2/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/19—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/46—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)

Abstract

　一般式（１）で表される部分構造を有する化合物である。 （一般式（１）中、Ｒ１はそれぞれ独立に水素原子または炭化水素基、Ｒ２は炭化水素基、Ｒｆはフッ素原子またはパーフルオロアルキル基、Ｌは０～４の整数、ｎは０～１０の整数、ｍは１～４の整数を示す。）
PCT/JP2008/068533 2007-10-15 2008-10-14 スルホン化合物、スルホン酸塩および感放射線性樹脂組成物 WO2009051088A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880111642A CN101827813A (zh) 2007-10-15 2008-10-14 砜化合物、磺酸盐和放射线敏感性树脂组合物
KR1020107008086A KR101330944B1 (ko) 2007-10-15 2008-10-14 술폰 화합물, 술폰산염 및 감방사선성 수지 조성물
JP2009538082A JP5407866B2 (ja) 2007-10-15 2008-10-14 スルホン化合物、スルホン酸塩および感放射線性樹脂組成物
US12/760,509 US8440384B2 (en) 2007-10-15 2010-04-14 Compound, salt, and radiation-sensitive resin composition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-267700 2007-10-15
JP2007267700 2007-10-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/760,509 Continuation US8440384B2 (en) 2007-10-15 2010-04-14 Compound, salt, and radiation-sensitive resin composition

Publications (1)

Publication Number Publication Date
WO2009051088A1 true WO2009051088A1 (ja) 2009-04-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068533 WO2009051088A1 (ja) 2007-10-15 2008-10-14 スルホン化合物、スルホン酸塩および感放射線性樹脂組成物

Country Status (6)

Country Link
US (1) US8440384B2 (ja)
JP (1) JP5407866B2 (ja)
KR (1) KR101330944B1 (ja)
CN (1) CN101827813A (ja)
TW (1) TW200918495A (ja)
WO (1) WO2009051088A1 (ja)

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JP2010140014A (ja) * 2008-11-14 2010-06-24 Sumitomo Chemical Co Ltd 化学増幅型フォトレジスト組成物
JP2010282189A (ja) * 2009-05-07 2010-12-16 Jsr Corp 感放射線性樹脂組成物
JP2011053430A (ja) * 2009-09-01 2011-03-17 Fujifilm Corp 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP2011059516A (ja) * 2009-09-11 2011-03-24 Jsr Corp 感放射線性樹脂組成物
WO2011118490A1 (ja) * 2010-03-25 2011-09-29 Jsr株式会社 感放射線性樹脂組成物
WO2012043415A1 (ja) * 2010-09-29 2012-04-05 Jsr株式会社 感放射線性樹脂組成物
JP2012106980A (ja) * 2010-07-29 2012-06-07 Sumitomo Chemical Co Ltd 塩、レジスト組成物及びレジストパターンの製造方法
WO2012101942A1 (ja) * 2011-01-28 2012-08-02 Jsr株式会社 レジストパターン形成方法及び感放射線性樹脂組成物
JP2013033161A (ja) * 2011-08-02 2013-02-14 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法
JP2013068777A (ja) * 2011-09-22 2013-04-18 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
CN103086934A (zh) * 2011-09-30 2013-05-08 罗门哈斯电子材料有限公司 光酸产生剂及包含该光酸产生剂的光刻胶
US8580480B2 (en) 2010-07-27 2013-11-12 Jsr Corporation Radiation-sensitive resin composition, method for forming resist pattern, polymer and compound
US8603726B2 (en) 2010-09-29 2013-12-10 Jsr Corporation Radiation-sensitive resin composition, polymer and compound
US8609318B2 (en) 2010-08-05 2013-12-17 Jsr Corporation Radiation-sensitive resin composition, method for forming resist pattern and polymer
US8609319B2 (en) 2010-10-01 2013-12-17 Jsr Corporation Radiation-sensitive resin composition and resist film formed using the same
JP2014098921A (ja) * 2014-01-06 2014-05-29 Fujifilm Corp 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
US8765355B2 (en) 2010-08-19 2014-07-01 Jsr Corporation Radiation sensitive resin composition, method for forming a pattern, polymer and compound
JP2014178694A (ja) * 2014-04-08 2014-09-25 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
US8889335B2 (en) 2010-09-09 2014-11-18 Jsr Corporation Radiation-sensitive resin composition
US8889336B2 (en) 2010-12-02 2014-11-18 Jsr Corporation Radiation-sensitive resin composition and radiation-sensitive acid generating agent
WO2015012212A1 (ja) 2013-07-24 2015-01-29 Jsr株式会社 マイクロ流体装置およびその製造方法、流路形成用感光性樹脂組成物
US9040221B2 (en) 2010-05-20 2015-05-26 Jsr Corporation Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound
JP2015127827A (ja) * 2015-03-12 2015-07-09 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
US9104102B2 (en) 2010-01-29 2015-08-11 Jsr Corporation Radiation-sensitive resin composition
US9122154B2 (en) 2011-01-11 2015-09-01 Jsr Corporation Radiation-sensitive resin composition, and radiation-sensitive acid generating agent
US9140981B2 (en) 2011-09-22 2015-09-22 Fujifilm Corporation Actinic-ray-sensitive or radiation-sensitive resin composition, and resist film using the same, pattern forming method, electronic device manufacturing method, and electronic device, each using the same
JP2016028295A (ja) * 2010-01-25 2016-02-25 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 窒素含有化合物を含むフォトレジスト
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US9952517B2 (en) 2014-06-30 2018-04-24 Asml Netherlands B.V. Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method
US9964853B2 (en) 2012-11-30 2018-05-08 Asml Netherlands B.V. Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method

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US8440384B2 (en) 2013-05-14
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