WO2009020089A1 - 芳香族スルホニウム塩化合物 - Google Patents

芳香族スルホニウム塩化合物 Download PDF

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Publication number
WO2009020089A1
WO2009020089A1 PCT/JP2008/063952 JP2008063952W WO2009020089A1 WO 2009020089 A1 WO2009020089 A1 WO 2009020089A1 JP 2008063952 W JP2008063952 W JP 2008063952W WO 2009020089 A1 WO2009020089 A1 WO 2009020089A1
Authority
WO
WIPO (PCT)
Prior art keywords
general formula
zero
salt compound
sulfonium salt
aromatic sulfonium
Prior art date
Application number
PCT/JP2008/063952
Other languages
English (en)
French (fr)
Inventor
Tetsuyuki Nakayashiki
Kentaro Kimura
Original Assignee
Adeka Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corporation filed Critical Adeka Corporation
Priority to US12/672,182 priority Critical patent/US8227624B2/en
Priority to CN200880102219.5A priority patent/CN101778818B/zh
Priority to JP2009526444A priority patent/JP5367572B2/ja
Priority to EP08792156.5A priority patent/EP2186799B1/en
Publication of WO2009020089A1 publication Critical patent/WO2009020089A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/76—Dibenzothiophenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/687—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K15/00—Anti-oxidant compositions; Compositions inhibiting chemical change
    • C09K15/04—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds
    • C09K15/10—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing

Abstract

　吸収したエネルギーに対して効率的に酸を発生することができ、現像性に優れ、微細なパターンを形成できる光酸発生剤、および、硬化性に優れたカチオン重合開始剤を提供することにあり、また、これらを用いたレジスト組成物およびカチオン重合組成物を提供する。 　下記一般式（Ｉ）、 （一般式（Ｉ）中、Ｅ１～Ｅ４は、それぞれ独立に、下記一般式（ＩＩ）または下記一般式（ＩＩＩ）、 で表される置換基である）で表される芳香族スルホニウム塩化合物である。一般式（Ｉ）中、ｒおよびｓが０であるもの、ｍおよびｎが０であるもの、あるいはｎおよびｒが０であるものが好ましく、一般式（Ｉ）中、ｍとｓのいずれか一方が１であるものが、より好ましい。
PCT/JP2008/063952 2007-08-07 2008-08-04 芳香族スルホニウム塩化合物 WO2009020089A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/672,182 US8227624B2 (en) 2007-08-07 2008-08-04 Aromatic sulfonium salt compound
CN200880102219.5A CN101778818B (zh) 2007-08-07 2008-08-04 芳香族硫鎓盐化合物
JP2009526444A JP5367572B2 (ja) 2007-08-07 2008-08-04 芳香族スルホニウム塩化合物
EP08792156.5A EP2186799B1 (en) 2007-08-07 2008-08-04 Aromatic sulfonium salt compound

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007205876 2007-08-07
JP2007-205876 2007-08-07

Publications (1)

Publication Number Publication Date
WO2009020089A1 true WO2009020089A1 (ja) 2009-02-12

Family

ID=40341322

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063952 WO2009020089A1 (ja) 2007-08-07 2008-08-04 芳香族スルホニウム塩化合物

Country Status (7)

Country Link
US (1) US8227624B2 (ja)
EP (1) EP2186799B1 (ja)
JP (1) JP5367572B2 (ja)
KR (1) KR101545931B1 (ja)
CN (1) CN101778818B (ja)
TW (1) TWI462896B (ja)
WO (1) WO2009020089A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010235579A (ja) * 2009-03-13 2010-10-21 Adeka Corp 芳香族スルホニウム塩化合物
JP2011016970A (ja) * 2009-07-10 2011-01-27 Jsr Corp 感放射線性樹脂組成物及びスルホニウム塩
JP2012246456A (ja) * 2011-05-31 2012-12-13 San Apro Kk フッ素化アルキルリン酸オニウム塩系酸発生剤
CN106414318A (zh) * 2014-01-17 2017-02-15 东友精细化工有限公司 新型磺酰亚胺盐化合物、其制造方法和包含其的光产酸剂以及感光性树脂组合物
WO2017212963A1 (ja) * 2016-06-09 2017-12-14 サンアプロ株式会社 スルホニウム塩、光酸発生剤、硬化性組成物およびレジスト組成物
JP2019048785A (ja) * 2017-09-11 2019-03-28 東京応化工業株式会社 化合物
JP2019073470A (ja) * 2017-10-16 2019-05-16 サンアプロ株式会社 光酸発生剤、硬化性組成物及びレジスト組成物
JP2019524737A (ja) * 2016-08-08 2019-09-05 常州強力電子新材料股▲分▼有限公司ＣＨＡＮＧＺＨＯＵ ＴＲＯＮＬＹ ＮＥＷ ＥＬＥＣＴＲＯＮＩＣ ＭＡＴＥＲＩＡＬＳ Ｃｏ．， Ｌｔｄ． 新規カチオン型光開始剤、並びにその製造方法及び使用
JPWO2019225185A1 (ja) * 2018-05-25 2021-06-24 サンアプロ株式会社 スルホニウム塩、光酸発生剤、硬化性組成物およびレジスト組成物

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ATE410460T1 (de) * 2005-08-23 2008-10-15 Fujifilm Corp Härtbare tinte enthaltend modifiziertes oxetan
JP5387181B2 (ja) * 2009-07-08 2014-01-15 信越化学工業株式会社 スルホニウム塩、レジスト材料及びパターン形成方法
TWI527792B (zh) 2012-06-26 2016-04-01 羅門哈斯電子材料有限公司 光酸產生劑、含該光酸產生劑之光阻劑及含該光阻劑之經塗覆物件
JP5879229B2 (ja) * 2012-08-20 2016-03-08 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
US9029065B2 (en) * 2012-10-26 2015-05-12 Rohm And Haas Electronic Materials Llc Photoacid generating compound and photoresist composition comprising same, coated article comprising the photoresist and method of making an article
US9067909B2 (en) 2013-08-28 2015-06-30 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US9046767B2 (en) 2013-10-25 2015-06-02 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
CN104267578B (zh) * 2014-08-15 2017-12-05 同济大学 一类含芴的硫鎓盐类光生酸剂、制备方法及其应用
EP3216837B1 (en) * 2015-04-16 2020-07-15 Furukawa Electric Co., Ltd. Electrically conductive adhesive film and dicing die bonding film
JP6708382B2 (ja) * 2015-09-03 2020-06-10 サンアプロ株式会社 硬化性組成物及びそれを用いた硬化体
CN109456242B (zh) 2017-09-06 2021-02-12 常州强力电子新材料股份有限公司 硫鎓盐光引发剂、其制备方法、包含其的光固化组合物及其应用
EP3865473A4 (en) 2018-10-09 2022-11-23 Changzhou Tronly Advanced Electronic Materials Co., Ltd. QUATERNARY TRIPHENYL-PHOSPHONIUM SALT COMPOUND, METHOD FOR PREPARATION AND APPLICATION
KR20220125230A (ko) * 2020-01-07 2022-09-14 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 화합물

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Cited By (15)

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Publication number Priority date Publication date Assignee Title
JP2010235579A (ja) * 2009-03-13 2010-10-21 Adeka Corp 芳香族スルホニウム塩化合物
JP2011016970A (ja) * 2009-07-10 2011-01-27 Jsr Corp 感放射線性樹脂組成物及びスルホニウム塩
JP2012246456A (ja) * 2011-05-31 2012-12-13 San Apro Kk フッ素化アルキルリン酸オニウム塩系酸発生剤
CN106414318A (zh) * 2014-01-17 2017-02-15 东友精细化工有限公司 新型磺酰亚胺盐化合物、其制造方法和包含其的光产酸剂以及感光性树脂组合物
WO2017212963A1 (ja) * 2016-06-09 2017-12-14 サンアプロ株式会社 スルホニウム塩、光酸発生剤、硬化性組成物およびレジスト組成物
KR20190017757A (ko) * 2016-06-09 2019-02-20 산아프로 가부시키가이샤 술포늄염, 광산 발생제, 경화성 조성물 및 레지스트 조성물
KR102272225B1 (ko) 2016-06-09 2021-07-01 산아프로 가부시키가이샤 술포늄염, 광산 발생제, 경화성 조성물 및 레지스트 조성물
JPWO2017212963A1 (ja) * 2016-06-09 2019-04-04 サンアプロ株式会社 スルホニウム塩、光酸発生剤、硬化性組成物およびレジスト組成物
JP2019524737A (ja) * 2016-08-08 2019-09-05 常州強力電子新材料股▲分▼有限公司ＣＨＡＮＧＺＨＯＵ ＴＲＯＮＬＹ ＮＥＷ ＥＬＥＣＴＲＯＮＩＣ ＭＡＴＥＲＩＡＬＳ Ｃｏ．， Ｌｔｄ． 新規カチオン型光開始剤、並びにその製造方法及び使用
US10995082B2 (en) 2016-08-08 2021-05-04 Changzhou Tronly New Electronic Materials Co., Ltd. Cationic photoinitiator and preparation method and use thereof
JP2019048785A (ja) * 2017-09-11 2019-03-28 東京応化工業株式会社 化合物
JP2019073470A (ja) * 2017-10-16 2019-05-16 サンアプロ株式会社 光酸発生剤、硬化性組成物及びレジスト組成物
JP7048248B2 (ja) 2017-10-16 2022-04-05 サンアプロ株式会社 光酸発生剤、硬化性組成物及びレジスト組成物
JPWO2019225185A1 (ja) * 2018-05-25 2021-06-24 サンアプロ株式会社 スルホニウム塩、光酸発生剤、硬化性組成物およびレジスト組成物
JP7174044B2 (ja) 2018-05-25 2022-11-17 サンアプロ株式会社 スルホニウム塩、光酸発生剤、硬化性組成物およびレジスト組成物

Also Published As

Publication number Publication date
EP2186799A1 (en) 2010-05-19
US20110152540A1 (en) 2011-06-23
JPWO2009020089A1 (ja) 2010-11-04
TW200927715A (en) 2009-07-01
KR101545931B1 (ko) 2015-08-20
KR20100050550A (ko) 2010-05-13
EP2186799B1 (en) 2015-07-08
US8227624B2 (en) 2012-07-24
CN101778818B (zh) 2014-01-08
CN101778818A (zh) 2010-07-14
EP2186799A4 (en) 2013-05-15
JP5367572B2 (ja) 2013-12-11
TWI462896B (zh) 2014-12-01

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