ATE525676T1 - Positiv arbeitende resistzusammensetzung - Google Patents
Positiv arbeitende resistzusammensetzungInfo
- Publication number
- ATE525676T1 ATE525676T1 AT03012142T AT03012142T ATE525676T1 AT E525676 T1 ATE525676 T1 AT E525676T1 AT 03012142 T AT03012142 T AT 03012142T AT 03012142 T AT03012142 T AT 03012142T AT E525676 T1 ATE525676 T1 AT E525676T1
- Authority
- AT
- Austria
- Prior art keywords
- resistant composition
- positive working
- acid
- positive
- aii
- Prior art date
Links
- 239000002253 acid Substances 0.000 abstract 2
- 239000003513 alkali Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002158822A JP4018454B2 (ja) | 2002-05-31 | 2002-05-31 | ポジ型レジスト組成物 |
JP2002158821A JP4073253B2 (ja) | 2002-05-31 | 2002-05-31 | ポジ型レジスト組成物 |
JP2002161617A JP4073255B2 (ja) | 2002-06-03 | 2002-06-03 | ポジ型レジスト組成物 |
JP2002285486A JP4056345B2 (ja) | 2002-09-30 | 2002-09-30 | ポジ型レジスト組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE525676T1 true ATE525676T1 (de) | 2011-10-15 |
Family
ID=29424667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03012142T ATE525676T1 (de) | 2002-05-31 | 2003-06-02 | Positiv arbeitende resistzusammensetzung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6939662B2 (de) |
EP (5) | EP2278400A3 (de) |
KR (2) | KR100955454B1 (de) |
AT (1) | ATE525676T1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7214467B2 (en) * | 2002-06-07 | 2007-05-08 | Fujifilm Corporation | Photosensitive resin composition |
US6830871B2 (en) * | 2002-08-19 | 2004-12-14 | Fuji Photo Film Co., Ltd. | Chemical amplification type resist composition |
WO2004040376A1 (ja) * | 2002-10-29 | 2004-05-13 | Jsr Corporation | 感放射線性樹脂組成物 |
US20040192876A1 (en) * | 2002-11-18 | 2004-09-30 | Nigel Hacker | Novolac polymer planarization films with high temparature stability |
JP4166598B2 (ja) * | 2003-03-12 | 2008-10-15 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP4565820B2 (ja) * | 2003-07-07 | 2010-10-20 | ダイセル化学工業株式会社 | 6−トリフルオロメチル−2−ビニルオキシ−4−オキサトリシクロ[4.2.1.03,7]ノナン−5−オン、及び高分子化合物 |
JP4426526B2 (ja) * | 2003-07-17 | 2010-03-03 | ハネウエル・インターナシヨナル・インコーポレーテツド | 最新式のマイクロエレクトロニクス用途およびデバイス用の平坦化膜およびそれらの製造方法 |
JP4377174B2 (ja) * | 2003-07-25 | 2009-12-02 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP2005049695A (ja) * | 2003-07-30 | 2005-02-24 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP4411102B2 (ja) * | 2003-09-01 | 2010-02-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US7923192B2 (en) * | 2004-02-20 | 2011-04-12 | Tokyo Ohka Kogyo Co., Ltd. | Base material for pattern-forming material, positive resist composition and method of resist pattern formation |
US7906268B2 (en) * | 2004-03-18 | 2011-03-15 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
JP2005275283A (ja) * | 2004-03-26 | 2005-10-06 | Fuji Photo Film Co Ltd | 電子線、euv光又はx線用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US7255973B2 (en) * | 2004-04-09 | 2007-08-14 | Shin-Etsu Chemical Co., Ltd. | Positive resist compositions and patterning process |
EP1778759B1 (de) * | 2004-07-07 | 2008-11-12 | Promerus, LLC | Lichtempfindliche dielektrische harzzusammensetzungen und ihre verwendungen |
JP3946715B2 (ja) * | 2004-07-28 | 2007-07-18 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4468119B2 (ja) * | 2004-09-08 | 2010-05-26 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
JP4837323B2 (ja) * | 2004-10-29 | 2011-12-14 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法および化合物 |
US7947421B2 (en) * | 2005-01-24 | 2011-05-24 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
US7981588B2 (en) * | 2005-02-02 | 2011-07-19 | Tokyo Ohka Kogyo Co., Ltd. | Negative resist composition and method of forming resist pattern |
US20060194143A1 (en) * | 2005-02-25 | 2006-08-31 | Shinichi Sumida | Fluorine-containing polymerizable monomers, fluorine-containing polymer compounds, resist compositions using the same, and patterning process |
JP5138157B2 (ja) * | 2005-05-17 | 2013-02-06 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4813103B2 (ja) | 2005-06-17 | 2011-11-09 | 東京応化工業株式会社 | 化合物、ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4732038B2 (ja) | 2005-07-05 | 2011-07-27 | 東京応化工業株式会社 | 化合物、ポジ型レジスト組成物およびレジストパターン形成方法 |
EP3537217B1 (de) * | 2005-12-09 | 2022-08-31 | FUJIFILM Corporation | Positive resistzusammensetzung, für die positive resistzusammensetzung verwendetes harz, für die synthese des harzes verwendete verbindung und musterformungsverfahren mit verwendung positiven resistzusammensetzung |
KR101425229B1 (ko) | 2006-03-31 | 2014-08-01 | 제이에스알 가부시끼가이샤 | 불소 함유 중합체 및 정제 방법, 및 감방사선성 수지 조성물 |
EP1975714A1 (de) * | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive Resistzusammensetzung und Verfahren zur Strukturformung |
JP2008268920A (ja) * | 2007-03-28 | 2008-11-06 | Fujifilm Corp | ポジ型レジスト組成物およびパターン形成方法 |
JP4621754B2 (ja) * | 2007-03-28 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
KR101729792B1 (ko) * | 2009-02-23 | 2017-04-24 | 제이에스알 가부시끼가이샤 | 화합물, 불소 원자 함유 중합체, 및 감방사선성 수지 조성물 |
KR101305111B1 (ko) * | 2010-06-30 | 2013-09-05 | 주식회사 동진쎄미켐 | 레지스트 보호막 형성용 중합체, 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성방법 |
US8835094B2 (en) * | 2010-09-29 | 2014-09-16 | Shin-Etsu Chemical Co., Ltd. | Fluoroalcohol, fluorinated monomer, polymer, resist composition and patterning process |
JP5282781B2 (ja) * | 2010-12-14 | 2013-09-04 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP5729313B2 (ja) * | 2011-01-19 | 2015-06-03 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
JP5783142B2 (ja) * | 2011-07-25 | 2015-09-24 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
JP5556765B2 (ja) * | 2011-08-05 | 2014-07-23 | 信越化学工業株式会社 | ArF液浸露光用化学増幅ポジ型レジスト材料及びパターン形成方法 |
JP5825248B2 (ja) | 2012-12-12 | 2015-12-02 | 信越化学工業株式会社 | ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
JP5825252B2 (ja) * | 2012-12-26 | 2015-12-02 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
JP5821862B2 (ja) * | 2013-01-29 | 2015-11-24 | 信越化学工業株式会社 | ネガ型レジスト材料並びにこれを用いたパターン形成方法 |
KR102126894B1 (ko) * | 2013-03-11 | 2020-06-25 | 주식회사 동진쎄미켐 | 리소그래피용 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성 방법 |
JP7229149B2 (ja) * | 2019-01-31 | 2023-02-27 | 信越化学工業株式会社 | 導電性ポリマー用高分子化合物及びその製造方法 |
Family Cites Families (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US469056A (en) | 1892-02-16 | Louis bredannaz | ||
US2833827A (en) | 1955-01-17 | 1958-05-06 | Bayer Ag | Tri (3, 5-di lower alkyl-4-hydroxy phenyl)-sulfonium chlorides and method of preparing same |
US3902114A (en) | 1967-10-20 | 1975-08-26 | Gunther Alich | Method of and apparatus for measuring the distance between cooperating rollers of a rolling mill |
US3734928A (en) | 1970-08-11 | 1973-05-22 | Dow Chemical Co | Difunctional iodonium salts of diphenyl oxide and preparation |
US3987037A (en) | 1971-09-03 | 1976-10-19 | Minnesota Mining And Manufacturing Company | Chromophore-substituted vinyl-halomethyl-s-triazines |
US3905815A (en) | 1971-12-17 | 1975-09-16 | Minnesota Mining & Mfg | Photopolymerizable sheet material with diazo resin layer |
DE2242106A1 (de) | 1972-08-26 | 1974-03-21 | Agfa Gevaert Ag | Lichtempfindliches photographisches material |
USRE27992E (en) | 1973-01-31 | 1974-04-30 | Fig.io | |
GB1512981A (en) | 1974-05-02 | 1978-06-01 | Gen Electric | Curable epoxide compositions |
US4069056A (en) | 1974-05-02 | 1978-01-17 | General Electric Company | Photopolymerizable composition containing group Va aromatic onium salts |
DE2718130C2 (de) | 1977-04-23 | 1979-05-17 | Du Pont De Nemours (Deutschland) Gmbh, 4000 Duesseldorf | lichtempfindliches Aufzeichnungsmaterial |
US4173476A (en) | 1978-02-08 | 1979-11-06 | Minnesota Mining And Manufacturing Company | Complex salt photoinitiator |
US4181531A (en) | 1978-04-07 | 1980-01-01 | E. I. Du Pont De Nemours And Company | Positive non-silver systems containing nitrofuryldihydropyridine |
JPS6053300B2 (ja) | 1978-08-29 | 1985-11-25 | 富士写真フイルム株式会社 | 感光性樹脂組成物 |
ATE9811T1 (de) | 1980-07-14 | 1984-10-15 | Akzo N.V. | Einen blockierten katalysator enthaltende waermehaertbare ueberzugszusammensetzung. |
US4478967A (en) | 1980-08-11 | 1984-10-23 | Minnesota Mining And Manufacturing Company | Photolabile blocked surfactants and compositions containing the same |
US4371605A (en) | 1980-12-09 | 1983-02-01 | E. I. Du Pont De Nemours And Company | Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates |
US4431774A (en) | 1981-09-14 | 1984-02-14 | Ciba-Geigy Corporation | Process for the curing of stoving lacquers |
US4510290A (en) | 1982-01-11 | 1985-04-09 | Ciba Geigy Corporation | Acid-curable composition containing a masked curing catalyst, and a process for the curing thereof |
ATE20474T1 (de) | 1982-08-09 | 1986-07-15 | Akzo Nv | Waermehaertbare ueberzugszusammensetzung, die eine blockierte saeure als katalysator enthaelt. |
US4554238A (en) | 1984-03-20 | 1985-11-19 | Minnesota Mining And Manufacturing Company | Spectrally-sensitized imaging system |
JPS60198538A (ja) | 1984-03-22 | 1985-10-08 | Toshiba Corp | ポジ型レジスト材料 |
JPS60218309A (ja) | 1984-04-16 | 1985-11-01 | Nippon Oil & Fats Co Ltd | パ−ル状ヘア−リンス |
JPS60239736A (ja) | 1984-05-14 | 1985-11-28 | Fuji Photo Film Co Ltd | 感光性組成物 |
JP2525568B2 (ja) | 1985-01-18 | 1996-08-21 | 富士写真フイルム株式会社 | 光可溶化組成物 |
JPS61169837A (ja) | 1985-01-22 | 1986-07-31 | Fuji Photo Film Co Ltd | 光可溶化組成物 |
JPS61169835A (ja) | 1985-01-22 | 1986-07-31 | Fuji Photo Film Co Ltd | 光可溶化組成物 |
JPS61226745A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
JPS61226746A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
DE3660255D1 (en) | 1985-04-12 | 1988-07-07 | Ciba Geigy Ag | Oxime sulphonates containing reactive groups |
JPS62123444A (ja) | 1985-08-07 | 1987-06-04 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
JPH0616174B2 (ja) | 1985-08-12 | 1994-03-02 | 三菱化成株式会社 | ナフトキノンジアジド系化合物及び該化合物を含有するポジ型フオトレジスト組成物 |
JPH0766185B2 (ja) | 1985-09-09 | 1995-07-19 | 富士写真フイルム株式会社 | 感光性組成物 |
JPH0692509B2 (ja) | 1985-12-17 | 1994-11-16 | 日本石油株式会社 | 高強度・高弾性率繊維又はフイルム製造用ポリエチレン溶液の製造法 |
JPH083630B2 (ja) | 1986-01-23 | 1996-01-17 | 富士写真フイルム株式会社 | 感光性組成物 |
DE3604581A1 (de) | 1986-02-14 | 1987-08-20 | Basf Ag | 4-acylbenzylsulfoniumsalze, ihre herstellung sowie sie enthaltende photohaertbare gemische und aufzeichnungsmaterialien |
DE3604580A1 (de) | 1986-02-14 | 1987-08-20 | Basf Ag | Haertbare mischungen, enthaltend n-sulfonylaminosulfoniumsalze als kationisch wirksame katalysatoren |
JPS62212401A (ja) | 1986-03-14 | 1987-09-18 | Fuji Photo Film Co Ltd | 光重合性組成物 |
JPS6334540A (ja) | 1986-07-30 | 1988-02-15 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
JPS6370243A (ja) | 1986-09-11 | 1988-03-30 | Fuji Photo Film Co Ltd | 感光性組成物 |
DE3642855C1 (de) | 1986-12-16 | 1988-06-23 | Du Pont Deutschland | Lichtempfindliches Gemisch |
US4760013A (en) | 1987-02-17 | 1988-07-26 | International Business Machines Corporation | Sulfonium salt photoinitiators |
AU612143B2 (en) | 1987-03-19 | 1991-07-04 | Xytronyx, Inc. | Systems for the visualization of exposure to ultraviolet radiation and for the utilization of ultraviolet radiation to effect color changes |
JPH0743536B2 (ja) | 1987-05-29 | 1995-05-15 | 富士写真フイルム株式会社 | 感光性組成物 |
DE3721541A1 (de) | 1987-06-30 | 1989-01-12 | Wilfried Dreyfuss | Schutzvorrichtung fuer rohrenden |
DE3721741A1 (de) | 1987-07-01 | 1989-01-12 | Basf Ag | Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien |
DE3721740A1 (de) | 1987-07-01 | 1989-01-12 | Basf Ag | Sulfoniumsalze mit saeurelabilen gruppierungen |
US4846009A (en) | 1987-10-21 | 1989-07-11 | Caterpillar Inc. | Countershaft transmission |
US4933377A (en) | 1988-02-29 | 1990-06-12 | Saeva Franklin D | Novel sulfonium salts and the use thereof as photoinitiators |
CA2002873A1 (en) | 1988-11-21 | 1990-05-21 | Franklin Donald Saeva | Onium salts and the use thereof as photoinitiators |
JPH02161445A (ja) | 1988-12-15 | 1990-06-21 | Fujitsu Ltd | 可視レーザ記録用感光材料 |
DE69027799T2 (de) | 1989-03-14 | 1997-01-23 | Ibm | Chemisch amplifizierter Photolack |
JP2661671B2 (ja) | 1989-03-20 | 1997-10-08 | 株式会社日立製作所 | パタン形成材料とそれを用いたパタン形成方法 |
IT1233538B (it) | 1989-07-25 | 1992-04-03 | Dolomite Spa | Scarpone da sci a calzata posteriore |
GB8923480D0 (en) | 1989-10-18 | 1989-12-06 | Moore John A | Improvements relating to hanger support elements |
JP2845995B2 (ja) | 1989-10-27 | 1999-01-13 | 株式会社日立製作所 | 領域抽出手法 |
JP2717602B2 (ja) | 1990-01-16 | 1998-02-18 | 富士写真フイルム株式会社 | 感光性組成物 |
DE69104605T2 (de) | 1990-02-16 | 1995-06-08 | Frykhult R Ingf Ab | Gerät zum filtrieren von flüssigkeiten. |
JPH04164041A (ja) * | 1990-10-25 | 1992-06-09 | Toagosei Chem Ind Co Ltd | 含フッ素スチレン誘導体 |
US5296330A (en) | 1991-08-30 | 1994-03-22 | Ciba-Geigy Corp. | Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive |
US5576143A (en) | 1991-12-03 | 1996-11-19 | Fuji Photo Film Co., Ltd. | Light-sensitive composition |
JP2753921B2 (ja) | 1992-06-04 | 1998-05-20 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
FR2703553B1 (fr) | 1993-04-02 | 1995-05-12 | Gec Alsthom Transport Sa | Procédé de contrôle actif du bruit produit par un appareil et dispositif de mise en Óoeuvre du procédé. |
JP3112229B2 (ja) | 1993-06-30 | 2000-11-27 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
JP3224115B2 (ja) | 1994-03-17 | 2001-10-29 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
DE69525883T2 (de) | 1994-07-04 | 2002-10-31 | Fuji Photo Film Co Ltd | Positiv-photoresistzusammensetzung |
JPH0862834A (ja) | 1994-08-22 | 1996-03-08 | Mitsubishi Chem Corp | フォトレジスト組成物 |
JPH095988A (ja) | 1995-06-21 | 1997-01-10 | Mitsubishi Chem Corp | 感放射線性塗布組成物 |
JP3562599B2 (ja) | 1995-08-18 | 2004-09-08 | 大日本インキ化学工業株式会社 | フォトレジスト組成物 |
IL141803A0 (en) | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
WO2000067072A1 (en) | 1999-05-04 | 2000-11-09 | E.I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
AU1603101A (en) * | 1999-11-17 | 2001-05-30 | E.I. Du Pont De Nemours And Company | Nitrile/fluoroalcohol-containing photoresists and associated processes for microlithography |
US6579658B2 (en) * | 2000-02-17 | 2003-06-17 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
US6531260B2 (en) | 2000-04-07 | 2003-03-11 | Jsr Corporation | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition |
TW565747B (en) * | 2000-09-07 | 2003-12-11 | Shinetsu Chemical Co | Polymers, resist compositions and patterning process |
JP4190167B2 (ja) * | 2000-09-26 | 2008-12-03 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
US20050100814A1 (en) | 2000-11-29 | 2005-05-12 | Berger Larry L. | Bases and surfactants and their use in photoresist compositions for microlithography |
WO2002077712A2 (en) | 2001-03-22 | 2002-10-03 | Shipley Company, L.L.C. | Photoresist composition |
KR100863984B1 (ko) | 2001-07-03 | 2008-10-16 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
EP1341038B1 (de) | 2002-02-26 | 2012-10-24 | FUJIFILM Corporation | Photosensitive Harzzusammensetzung |
-
2003
- 2003-05-30 US US10/448,041 patent/US6939662B2/en not_active Expired - Fee Related
- 2003-05-30 KR KR1020030034881A patent/KR100955454B1/ko not_active IP Right Cessation
- 2003-06-02 EP EP10188668A patent/EP2278400A3/de not_active Withdrawn
- 2003-06-02 EP EP03012142A patent/EP1367440B1/de not_active Expired - Lifetime
- 2003-06-02 EP EP10188666A patent/EP2278398A3/de not_active Withdrawn
- 2003-06-02 EP EP10188667.9A patent/EP2278399B1/de not_active Expired - Lifetime
- 2003-06-02 EP EP10188665A patent/EP2278397A3/de not_active Withdrawn
- 2003-06-02 AT AT03012142T patent/ATE525676T1/de not_active IP Right Cessation
-
2009
- 2009-11-11 KR KR1020090108795A patent/KR100947853B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP2278398A2 (de) | 2011-01-26 |
EP2278397A3 (de) | 2011-02-23 |
EP1367440A2 (de) | 2003-12-03 |
EP2278397A2 (de) | 2011-01-26 |
EP1367440A3 (de) | 2004-06-30 |
EP1367440B1 (de) | 2011-09-21 |
KR100947853B1 (ko) | 2010-03-18 |
EP2278400A3 (de) | 2011-03-02 |
KR20090130838A (ko) | 2009-12-24 |
KR100955454B1 (ko) | 2010-04-29 |
EP2278399A2 (de) | 2011-01-26 |
US6939662B2 (en) | 2005-09-06 |
US20040005512A1 (en) | 2004-01-08 |
EP2278400A2 (de) | 2011-01-26 |
EP2278399A3 (de) | 2011-02-23 |
KR20040012459A (ko) | 2004-02-11 |
EP2278398A3 (de) | 2011-05-18 |
EP2278399B1 (de) | 2013-05-15 |
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