ATE497638T1 - Solarzellenmodul - Google Patents

Solarzellenmodul

Info

Publication number
ATE497638T1
ATE497638T1 AT07252876T AT07252876T ATE497638T1 AT E497638 T1 ATE497638 T1 AT E497638T1 AT 07252876 T AT07252876 T AT 07252876T AT 07252876 T AT07252876 T AT 07252876T AT E497638 T1 ATE497638 T1 AT E497638T1
Authority
AT
Austria
Prior art keywords
photovoltaic element
light receiving
surface side
protective member
receiving surface
Prior art date
Application number
AT07252876T
Other languages
English (en)
Inventor
Takeshi Nakashima
Eiji Maruyama
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of ATE497638T1 publication Critical patent/ATE497638T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
AT07252876T 2006-07-20 2007-07-19 Solarzellenmodul ATE497638T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006198721A JP4568254B2 (ja) 2006-07-20 2006-07-20 太陽電池モジュール

Publications (1)

Publication Number Publication Date
ATE497638T1 true ATE497638T1 (de) 2011-02-15

Family

ID=38657857

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07252876T ATE497638T1 (de) 2006-07-20 2007-07-19 Solarzellenmodul

Country Status (6)

Country Link
US (1) US7741558B2 (de)
EP (1) EP1881534B1 (de)
JP (1) JP4568254B2 (de)
AT (1) ATE497638T1 (de)
DE (1) DE602007012327D1 (de)
ES (1) ES2360141T3 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI390756B (zh) * 2008-07-16 2013-03-21 Applied Materials Inc 使用摻質層遮罩之混合異接面太陽能電池製造
JP2010034275A (ja) * 2008-07-29 2010-02-12 Toyo Aluminium Kk 太陽電池モジュール用裏面保護シート
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
FR2936905B1 (fr) * 2008-10-02 2010-10-29 Commissariat Energie Atomique Cellule photovoltaique a heterojonction a deux dopages et procede de fabrication.
KR100993511B1 (ko) 2008-11-19 2010-11-12 엘지전자 주식회사 태양 전지 및 그 제조 방법
JP5362379B2 (ja) * 2009-02-06 2013-12-11 三洋電機株式会社 太陽電池のｉ−ｖ特性の測定方法
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
CN102473750B (zh) * 2009-07-03 2014-08-20 株式会社钟化 晶体硅系太阳能电池及其制造方法
KR101070024B1 (ko) * 2009-07-21 2011-10-04 삼성전기주식회사 박막형 태양전지 및 그 제조방법
CN102473761A (zh) * 2009-09-18 2012-05-23 三洋电机株式会社 太阳能电池、太阳能电池模块和太阳能电池系统
KR101656118B1 (ko) * 2009-09-18 2016-09-08 파나소닉 아이피 매니지먼트 가부시키가이샤 태양 전지, 태양 전지 모듈 및 태양 전지 시스템
JP2011077454A (ja) * 2009-10-01 2011-04-14 Kaneka Corp 結晶シリコン系太陽電池とその製造方法
KR101113007B1 (ko) 2010-02-19 2012-03-13 한국과학기술원 유기 광전변환물질을 포함하는 탄뎀형 태양전지
WO2011115177A1 (ja) * 2010-03-19 2011-09-22 住友金属鉱山株式会社 透明導電膜
JP5541980B2 (ja) * 2010-06-24 2014-07-09 株式会社カネカ 結晶シリコン系太陽電池およびその製造方法
JPWO2012020682A1 (ja) * 2010-08-09 2013-10-28 株式会社カネカ 結晶シリコン系太陽電池
US9340867B2 (en) 2011-02-04 2016-05-17 Sumitomo Metal Mining Co., Ltd. Oxide sintered body and tablets obtained by processing same
US10043934B2 (en) * 2011-06-08 2018-08-07 International Business Machines Corporation Silicon-containing heterojunction photovoltaic element and device
JP5842170B2 (ja) * 2011-06-23 2016-01-13 パナソニックＩｐマネジメント株式会社 太陽電池モジュール
US20130180577A1 (en) * 2012-01-18 2013-07-18 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
ES2873473T5 (es) * 2012-07-02 2024-06-07 Meyer Burger Germany Gmbh Procedimientos de fabricación de células solares de heterounión con aislamiento de bordes
KR101979843B1 (ko) * 2013-03-13 2019-05-17 엘지전자 주식회사 태양전지
JP2015072936A (ja) * 2013-10-01 2015-04-16 長州産業株式会社 光発電素子
JP2015072938A (ja) * 2013-10-01 2015-04-16 長州産業株式会社 光発電素子及びその製造方法
JP2015070255A (ja) * 2013-10-01 2015-04-13 長州産業株式会社 光発電素子及びその製造方法
JP2015072939A (ja) * 2013-10-01 2015-04-16 長州産業株式会社 光発電素子
US9401438B2 (en) 2013-11-13 2016-07-26 Industrial Technology Research Institute Solar cell module and solar cell thereof
CN104638040A (zh) * 2013-11-13 2015-05-20 财团法人工业技术研究院 太阳能电池组

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318724A (ja) 1993-05-07 1994-11-15 Canon Inc 電極及び光起電力素子
JPH0783131A (ja) 1993-09-20 1995-03-28 Hiroshi Maekawa 液体燃料改質装置
JPH07278791A (ja) 1994-04-15 1995-10-24 Hitachi Ltd 低抵抗透明導電膜
JPH0864848A (ja) 1994-08-23 1996-03-08 Canon Inc 光電気変換装置、反射防止膜及び電極基板
WO1999063600A1 (en) 1998-06-01 1999-12-09 Kaneka Corporation Silicon-base thin-film photoelectric device
WO2002004761A1 (fr) 2000-07-12 2002-01-17 Kaneka Corporation Module de batterie solaire, structure d'installation pour module de batterie solaire, toit a fonction de production d'energie de la structure d'installation et procede d'installation d'un module de batterie solaire
JP2002335003A (ja) 2001-05-10 2002-11-22 Canon Inc 光起電力素子
JP3797317B2 (ja) 2002-05-30 2006-07-19 住友金属鉱山株式会社 透明導電性薄膜用ターゲット、透明導電性薄膜およびその製造方法、ディスプレイ用電極材料、有機エレクトロルミネッセンス素子
JP4152197B2 (ja) 2003-01-16 2008-09-17 三洋電機株式会社 光起電力装置
JP2005175160A (ja) 2003-12-10 2005-06-30 Sanyo Electric Co Ltd 光起電力装置
JP4266840B2 (ja) 2004-01-29 2009-05-20 三洋電機株式会社 太陽電池モジュール
JP4229858B2 (ja) 2004-03-16 2009-02-25 三洋電機株式会社 光電変換装置

Also Published As

Publication number Publication date
JP2008028133A (ja) 2008-02-07
DE602007012327D1 (de) 2011-03-17
ES2360141T3 (es) 2011-06-01
EP1881534A2 (de) 2008-01-23
US20080023068A1 (en) 2008-01-31
JP4568254B2 (ja) 2010-10-27
EP1881534A3 (de) 2009-02-25
EP1881534B1 (de) 2011-02-02
US7741558B2 (en) 2010-06-22

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties