ATE492025T1 - Magnetron-sputteranlage - Google Patents

Magnetron-sputteranlage

Info

Publication number
ATE492025T1
ATE492025T1 AT05255082T AT05255082T ATE492025T1 AT E492025 T1 ATE492025 T1 AT E492025T1 AT 05255082 T AT05255082 T AT 05255082T AT 05255082 T AT05255082 T AT 05255082T AT E492025 T1 ATE492025 T1 AT E492025T1
Authority
AT
Austria
Prior art keywords
cathode
planet
diameter
present
rates
Prior art date
Application number
AT05255082T
Other languages
German (de)
English (en)
Inventor
Markus K Tilsch
Richard I Seddon
Georg J Ockenfuss
Jeremy Hayes
Robert E Klinger
Original Assignee
Jds Uniphase Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/074,249 external-priority patent/US20060049041A1/en
Application filed by Jds Uniphase Corp filed Critical Jds Uniphase Corp
Application granted granted Critical
Publication of ATE492025T1 publication Critical patent/ATE492025T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
AT05255082T 2004-08-20 2005-08-17 Magnetron-sputteranlage ATE492025T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60321104P 2004-08-20 2004-08-20
US11/074,249 US20060049041A1 (en) 2004-08-20 2005-03-07 Anode for sputter coating
US11/177,465 US7879209B2 (en) 2004-08-20 2005-07-08 Cathode for sputter coating

Publications (1)

Publication Number Publication Date
ATE492025T1 true ATE492025T1 (de) 2011-01-15

Family

ID=35722363

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05255082T ATE492025T1 (de) 2004-08-20 2005-08-17 Magnetron-sputteranlage

Country Status (7)

Country Link
US (2) US7879209B2 (enExample)
EP (2) EP1628323B1 (enExample)
JP (2) JP4907124B2 (enExample)
CN (2) CN1737188B (enExample)
AT (1) ATE492025T1 (enExample)
DE (1) DE602005025293D1 (enExample)
ES (1) ES2626641T3 (enExample)

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US20090294017A1 (en) * 2008-05-30 2009-12-03 Precision Photonics Corporation Optical contacting enabled by thin film dielectric interface
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CN106950933B (zh) * 2017-05-02 2019-04-23 中江联合(北京)科技有限公司 质量一致性控制方法及装置、计算机存储介质
US10712475B2 (en) 2017-08-16 2020-07-14 Lumentum Operations Llc Multi-layer thin film stack for diffractive optical elements
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CN107365968B (zh) * 2017-08-24 2019-09-17 武汉华星光电半导体显示技术有限公司 一种溅镀装置及溅镀系统
CN111286712B (zh) * 2018-12-10 2022-05-17 苏州能讯高能半导体有限公司 一种靶材溅镀设备以及靶材溅镀系统
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Also Published As

Publication number Publication date
DE602005025293D1 (de) 2011-01-27
ES2626641T3 (es) 2017-07-25
US20060070877A1 (en) 2006-04-06
JP2006057181A (ja) 2006-03-02
EP1628324A3 (en) 2007-07-04
JP5048229B2 (ja) 2012-10-17
EP1628323B1 (en) 2017-03-29
JP4907124B2 (ja) 2012-03-28
JP2006057184A (ja) 2006-03-02
EP1628324B8 (en) 2011-01-26
EP1628323A2 (en) 2006-02-22
EP1628324B1 (en) 2010-12-15
EP1628324A2 (en) 2006-02-22
CN1737190A (zh) 2006-02-22
EP1628323A3 (en) 2009-04-22
US20060049042A1 (en) 2006-03-09
CN1737188B (zh) 2011-12-14
CN1737190B (zh) 2012-05-23
US7879209B2 (en) 2011-02-01
CN1737188A (zh) 2006-02-22
US8163144B2 (en) 2012-04-24

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