CN1737188B - 用于溅镀镀膜的阳极 - Google Patents

用于溅镀镀膜的阳极 Download PDF

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Publication number
CN1737188B
CN1737188B CN200510090898.7A CN200510090898A CN1737188B CN 1737188 B CN1737188 B CN 1737188B CN 200510090898 A CN200510090898 A CN 200510090898A CN 1737188 B CN1737188 B CN 1737188B
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CN
China
Prior art keywords
anode
sputtering apparatus
cathode
endosome
conduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN200510090898.7A
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English (en)
Chinese (zh)
Other versions
CN1737188A (zh
Inventor
乔治·J.·欧肯法思
马克斯·K.·太尔西
理查德·I.·塞登
罗伯特·E.·哈恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
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Flex Products Inc
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Filing date
Publication date
Priority claimed from US11/074,249 external-priority patent/US20060049041A1/en
Application filed by Flex Products Inc filed Critical Flex Products Inc
Publication of CN1737188A publication Critical patent/CN1737188A/zh
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Publication of CN1737188B publication Critical patent/CN1737188B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3438Electrodes other than cathode

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
CN200510090898.7A 2004-08-20 2005-08-19 用于溅镀镀膜的阳极 Expired - Lifetime CN1737188B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US60321104P 2004-08-20 2004-08-20
US60/603,211 2004-08-20
US11/074,249 US20060049041A1 (en) 2004-08-20 2005-03-07 Anode for sputter coating
US11/074,249 2005-03-07
US11/177,465 2005-07-08
US11/177,465 US7879209B2 (en) 2004-08-20 2005-07-08 Cathode for sputter coating

Publications (2)

Publication Number Publication Date
CN1737188A CN1737188A (zh) 2006-02-22
CN1737188B true CN1737188B (zh) 2011-12-14

Family

ID=35722363

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200510090898.7A Expired - Lifetime CN1737188B (zh) 2004-08-20 2005-08-19 用于溅镀镀膜的阳极
CN200510092825.1A Expired - Lifetime CN1737190B (zh) 2004-08-20 2005-08-22 磁控溅镀装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200510092825.1A Expired - Lifetime CN1737190B (zh) 2004-08-20 2005-08-22 磁控溅镀装置

Country Status (7)

Country Link
US (2) US7879209B2 (enExample)
EP (2) EP1628323B1 (enExample)
JP (2) JP4907124B2 (enExample)
CN (2) CN1737188B (enExample)
AT (1) ATE492025T1 (enExample)
DE (1) DE602005025293D1 (enExample)
ES (1) ES2626641T3 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4669831B2 (ja) * 2006-11-17 2011-04-13 株式会社アルバック イオンビーム源及びこれを備えた成膜装置
CN101240410B (zh) * 2007-02-07 2010-11-24 鸿富锦精密工业(深圳)有限公司 溅镀装置
US8864958B2 (en) * 2007-03-13 2014-10-21 Jds Uniphase Corporation Method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index
KR20150011014A (ko) * 2007-11-01 2015-01-29 오를리콘 트레이딩 아크티엔게젤샤프트, 트뤼프바흐 처리된 표면의 제조방법 및 진공 플라즈마 소스
WO2009086494A2 (en) * 2007-12-27 2009-07-09 Exatec, Llc Multi-pass vacuum coating systems
US20090294050A1 (en) * 2008-05-30 2009-12-03 Precision Photonics Corporation Optical contacting enhanced by hydroxide ions in a non-aqueous solution
US20090294017A1 (en) * 2008-05-30 2009-12-03 Precision Photonics Corporation Optical contacting enabled by thin film dielectric interface
US20100272964A1 (en) * 2008-05-30 2010-10-28 Precision Photonics Corporation - Photonics Optical Contacting Enabled by Thin Film Dielectric Interface
JP2010285316A (ja) * 2009-06-12 2010-12-24 Konica Minolta Opto Inc 金型の製造方法、ガラスゴブの製造方法及びガラス成形体の製造方法
US9502222B2 (en) * 2010-04-16 2016-11-22 Viavi Solutions Inc. Integrated anode and activated reactive gas source for use in magnetron sputtering device
JP5619666B2 (ja) * 2010-04-16 2014-11-05 ジェイディーエス ユニフェイズ コーポレーションJDS Uniphase Corporation マグネトロン・スパッタリング・デバイスで使用するためのリング・カソード
US8647437B2 (en) * 2010-05-31 2014-02-11 Ci Systems (Israel) Ltd. Apparatus, tool and methods for depositing annular or circular wedge coatings
RU2450086C2 (ru) * 2010-06-08 2012-05-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский институт "МЭИ" (ФГБОУ ВПО "НИУ МЭИ") Способ нанесения нанокомпозитного покрытия на плоские поверхности детали и устройство для его реализации (варианты)
DE102010038603B4 (de) * 2010-07-29 2016-06-02 Trumpf Huettinger Sp. Z O. O. DC-Plasmaanordnung
EP2509100B1 (en) * 2011-04-06 2019-08-14 Viavi Solutions Inc. Integrated anode and activated reactive gas source for use in a magnetron sputtering device
KR20140104045A (ko) * 2011-12-22 2014-08-27 캐논 아네르바 가부시키가이샤 SrRuO3 막 증착 방법
JP6244103B2 (ja) * 2012-05-04 2017-12-06 ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. 反応性スパッタ堆積のための方法および反応性スパッタ堆積システム
TWI648561B (zh) 2012-07-16 2019-01-21 美商唯亞威方案公司 光學濾波器及感測器系統
CN103602954B (zh) * 2013-11-06 2016-02-24 深圳市华星光电技术有限公司 用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置
WO2016032444A1 (en) * 2014-08-26 2016-03-03 Applied Materials, Inc. Vacuum deposition apparatus and method of operating thereof
EP3091561B1 (en) 2015-05-06 2019-09-04 safematic GmbH Sputter unit
EP3091101B1 (en) 2015-05-06 2018-10-17 safematic GmbH Coating unit
CN104988465B (zh) * 2015-06-29 2017-10-13 信利(惠州)智能显示有限公司 磁控溅射装置阳极部件
US9923007B2 (en) 2015-12-29 2018-03-20 Viavi Solutions Inc. Metal mirror based multispectral filter array
US9960199B2 (en) 2015-12-29 2018-05-01 Viavi Solutions Inc. Dielectric mirror based multispectral filter array
EP3279364B1 (en) * 2016-08-03 2021-10-06 IHI Hauzer Techno Coating B.V. Apparatus for coating substrates
US10168459B2 (en) * 2016-11-30 2019-01-01 Viavi Solutions Inc. Silicon-germanium based optical filter
US12442067B2 (en) * 2017-02-24 2025-10-14 Valeo North America Ceramic metallic coatings
CN106950933B (zh) * 2017-05-02 2019-04-23 中江联合(北京)科技有限公司 质量一致性控制方法及装置、计算机存储介质
US10712475B2 (en) 2017-08-16 2020-07-14 Lumentum Operations Llc Multi-layer thin film stack for diffractive optical elements
US10802185B2 (en) 2017-08-16 2020-10-13 Lumentum Operations Llc Multi-level diffractive optical element thin film coating
CN107365968B (zh) * 2017-08-24 2019-09-17 武汉华星光电半导体显示技术有限公司 一种溅镀装置及溅镀系统
CN111286712B (zh) * 2018-12-10 2022-05-17 苏州能讯高能半导体有限公司 一种靶材溅镀设备以及靶材溅镀系统
DE102019119664A1 (de) * 2019-07-19 2021-01-21 Infineon Technologies Ag Abtasten eines Drehwinkels
CN111041434B (zh) * 2020-03-17 2020-06-19 上海陛通半导体能源科技股份有限公司 用于沉积绝缘膜的物理气相沉积设备
DE102023002926A1 (de) * 2023-07-17 2025-01-23 Oerlikon Surface Solutions Ag, Pfäffikon Methode und Vorrichtung zur Synthese von hochisolierenden Schichten

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3616452A (en) * 1967-06-22 1971-10-26 Alsacienne De Construction Ato Production of deposits by cathode sputtering

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1015438A (en) 1910-09-22 1912-01-23 Corp Of Maschinenfabrik Moenus A G Belt-sewing machine.
US3514391A (en) 1967-05-05 1970-05-26 Nat Res Corp Sputtering apparatus with finned anode
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3916034A (en) * 1971-05-21 1975-10-28 Hitachi Ltd Method of transporting substances in a plasma stream to and depositing it on a target
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
US4169031A (en) 1978-01-13 1979-09-25 Polyohm, Inc. Magnetron sputter cathode assembly
US4222345A (en) 1978-11-30 1980-09-16 Optical Coating Laboratory, Inc. Vacuum coating apparatus with rotary motion assembly
US4250009A (en) 1979-05-18 1981-02-10 International Business Machines Corporation Energetic particle beam deposition system
US5766738A (en) 1979-12-28 1998-06-16 Flex Products, Inc. Paired optically variable article with paired optically variable structures and ink, paint and foil incorporating the same and method
US4318796A (en) 1980-07-15 1982-03-09 Murata Manufacturing Co., Ltd. Sputtering apparatus
US4351697A (en) * 1982-01-04 1982-09-28 Western Electric Company, Inc. Printed wiring boards
DE3381593D1 (de) * 1982-10-05 1990-06-28 Fujitsu Ltd Zerstaeubungsvorrichtung.
JPH0627323B2 (ja) * 1983-12-26 1994-04-13 株式会社日立製作所 スパツタリング方法及びその装置
US4478702A (en) 1984-01-17 1984-10-23 Ppg Industries, Inc. Anode for magnetic sputtering apparatus
JPS6110239A (ja) 1984-06-25 1986-01-17 Nec Kansai Ltd 半導体製造装置
DE3427587A1 (de) 1984-07-26 1986-02-06 Leybold-Heraeus GmbH, 5000 Köln Zerstaeubungseinrichtung fuer katodenzerstaeubungsanlagen
EP0173164B1 (en) 1984-08-31 1988-11-09 Hitachi, Ltd. Microwave assisting sputtering
EP0308680A1 (de) * 1987-09-21 1989-03-29 THELEN, Alfred, Dr. Vorrichtung zum Kathodenzerstäuben
WO1989003584A1 (en) 1987-10-14 1989-04-20 Unisearch Limited Multi-electrode vacuum processing chamber
DE3835153A1 (de) 1988-10-15 1990-04-26 Leybold Ag Vorrichtung zum aetzen von substraten durch eine glimmentladung
JP2592311B2 (ja) 1988-10-19 1997-03-19 富士写真フイルム株式会社 光磁気記録媒体の製造方法及び製造装置
DE4025077A1 (de) * 1990-08-08 1992-02-20 Leybold Ag Magnetronkathode
RU2008501C1 (ru) 1990-10-09 1994-02-28 Валерий Андреевич Попов Воздухоочиститель для двигателя внутреннего сгорания
DE69226725T2 (de) 1991-05-29 1999-02-18 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.), Kobe Beschichtungsanlage mittels Kathodenzerstäubung und Methode zur Steuerung derselben
IT1249440B (it) * 1991-08-14 1995-02-23 Ist Nazionale Fisica Nucleare Metodo e dispositivo per la deposizione tramite spruzzamento catodico di films sottili superconduttori di niobio su cavita' risonanti a quarto d'onda in rame per l'accellerazione di ioni pesanti.
US5525199A (en) * 1991-11-13 1996-06-11 Optical Corporation Of America Low pressure reactive magnetron sputtering apparatus and method
DE4137483A1 (de) * 1991-11-14 1993-05-19 Leybold Ag Kathode zum beschichten eines substrats
DE4201551C2 (de) 1992-01-22 1996-04-25 Leybold Ag Zerstäubungskathode
EP0556449B1 (en) 1992-02-21 1997-03-26 Hashimoto Forming Industry Co., Ltd. Painting with magnetically formed pattern and painted product with magnetically formed pattern
DE4237517A1 (de) * 1992-11-06 1994-05-11 Leybold Ag Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
DE4306611B4 (de) 1993-03-03 2004-04-15 Unaxis Deutschland Holding Gmbh Vorrichtung zur Oberflächenbehandlung von Substraten durch Plasmaeinwirkung
CA2123479C (en) 1993-07-01 1999-07-06 Peter A. Sieck Anode structure for magnetron sputtering systems
US5507931A (en) * 1993-12-30 1996-04-16 Deposition Technologies, Inc. Sputter deposition process
US5573596A (en) 1994-01-28 1996-11-12 Applied Materials, Inc. Arc suppression in a plasma processing system
DE29505497U1 (de) 1995-03-31 1995-06-08 Balzers Hochvakuum GmbH, 65205 Wiesbaden Beschichtungsstation
JP2748886B2 (ja) 1995-03-31 1998-05-13 日本電気株式会社 プラズマ処理装置
DE19513691A1 (de) * 1995-04-11 1996-10-17 Leybold Ag Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat
US5795448A (en) 1995-12-08 1998-08-18 Sony Corporation Magnetic device for rotating a substrate
JP3537269B2 (ja) * 1996-05-21 2004-06-14 アネルバ株式会社 マルチチャンバースパッタリング装置
US5736021A (en) 1996-07-10 1998-04-07 Applied Materials, Inc. Electrically floating shield in a plasma reactor
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6117279A (en) * 1998-11-12 2000-09-12 Tokyo Electron Limited Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition
US6207472B1 (en) 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
JP4656744B2 (ja) * 2000-03-09 2011-03-23 キヤノンアネルバ株式会社 スパッタリング装置
SE519931C2 (sv) * 2000-06-19 2003-04-29 Chemfilt R & D Ab Anordning och förfarande för pulsad, starkt joniserad magnetronsputtering
WO2002019379A1 (en) 2000-08-28 2002-03-07 Institute For Plasma Research Device and process for producing dc glow discharge
JP4592949B2 (ja) * 2000-12-27 2010-12-08 キヤノンアネルバ株式会社 マグネトロンスパッタリング装置
US20020160194A1 (en) 2001-04-27 2002-10-31 Flex Products, Inc. Multi-layered magnetic pigments and foils
US6841238B2 (en) 2002-04-05 2005-01-11 Flex Products, Inc. Chromatic diffractive pigments and foils
US20030116432A1 (en) * 2001-12-26 2003-06-26 Applied Materials, Inc. Adjustable throw reactor
US7645510B2 (en) 2002-09-13 2010-01-12 Jds Uniphase Corporation Provision of frames or borders around opaque flakes for covert security applications
US7241489B2 (en) 2002-09-13 2007-07-10 Jds Uniphase Corporation Opaque flake for covert security applications
US7166199B2 (en) * 2002-12-18 2007-01-23 Cardinal Cg Company Magnetron sputtering systems including anodic gas distribution systems
US7785456B2 (en) 2004-10-19 2010-08-31 Jds Uniphase Corporation Magnetic latch for a vapour deposition system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3616452A (en) * 1967-06-22 1971-10-26 Alsacienne De Construction Ato Production of deposits by cathode sputtering

Also Published As

Publication number Publication date
DE602005025293D1 (de) 2011-01-27
ATE492025T1 (de) 2011-01-15
ES2626641T3 (es) 2017-07-25
US20060070877A1 (en) 2006-04-06
JP2006057181A (ja) 2006-03-02
EP1628324A3 (en) 2007-07-04
JP5048229B2 (ja) 2012-10-17
EP1628323B1 (en) 2017-03-29
JP4907124B2 (ja) 2012-03-28
JP2006057184A (ja) 2006-03-02
EP1628324B8 (en) 2011-01-26
EP1628323A2 (en) 2006-02-22
EP1628324B1 (en) 2010-12-15
EP1628324A2 (en) 2006-02-22
CN1737190A (zh) 2006-02-22
EP1628323A3 (en) 2009-04-22
US20060049042A1 (en) 2006-03-09
CN1737190B (zh) 2012-05-23
US7879209B2 (en) 2011-02-01
CN1737188A (zh) 2006-02-22
US8163144B2 (en) 2012-04-24

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Address after: California, USA

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