IT1249440B - Metodo e dispositivo per la deposizione tramite spruzzamento catodico di films sottili superconduttori di niobio su cavita' risonanti a quarto d'onda in rame per l'accellerazione di ioni pesanti. - Google Patents

Metodo e dispositivo per la deposizione tramite spruzzamento catodico di films sottili superconduttori di niobio su cavita' risonanti a quarto d'onda in rame per l'accellerazione di ioni pesanti.

Info

Publication number
IT1249440B
IT1249440B ITRM910616A ITRM910616A IT1249440B IT 1249440 B IT1249440 B IT 1249440B IT RM910616 A ITRM910616 A IT RM910616A IT RM910616 A ITRM910616 A IT RM910616A IT 1249440 B IT1249440 B IT 1249440B
Authority
IT
Italy
Prior art keywords
deposition
niobio
accelleration
superconductors
thin films
Prior art date
Application number
ITRM910616A
Other languages
English (en)
Inventor
Vincenzo Palmieri
Renato Preciso
Vladimir L Ruzinov
Original Assignee
Ist Nazionale Fisica Nucleare
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ist Nazionale Fisica Nucleare filed Critical Ist Nazionale Fisica Nucleare
Priority to ITRM910616A priority Critical patent/IT1249440B/it
Publication of ITRM910616A0 publication Critical patent/ITRM910616A0/it
Priority to JP4233086A priority patent/JPH05202465A/ja
Priority to AT92830445T priority patent/ATE169062T1/de
Priority to EP92830445A priority patent/EP0527713B1/en
Priority to DE69226407T priority patent/DE69226407T2/de
Priority to US07/930,197 priority patent/US5306406A/en
Publication of ITRM910616A1 publication Critical patent/ITRM910616A1/it
Application granted granted Critical
Publication of IT1249440B publication Critical patent/IT1249440B/it
Priority to JP2003166309A priority patent/JP2004003032A/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/14—Vacuum chambers
    • H05H7/18—Cavities; Resonators
    • H05H7/20—Cavities; Resonators with superconductive walls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0156—Manufacture or treatment of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/816—Sputtering, including coating, forming, or etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/866—Wave transmission line, network, waveguide, or microwave storage device

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Metodo per la realizzazione di un sottile film di rivestimento all'interno di cavità risonanti a quarto d'onda in rame, consistente nella deposizione per spruzzamento catodico (sputtering) a diodo polarizzato in corrente continua, di un materiale superconduttore, in particolare Niobio, sotto forma di micro-strato a spessore praticamente costante che riveste sia la superficie cilindrica della cavità, sia la piastra piana che costituisce il fondo della medesima, mediante catodi emettitori aventi una forma che segue geometricamente l'andamento delle superfici da rivestire.
ITRM910616A 1991-08-14 1991-08-14 Metodo e dispositivo per la deposizione tramite spruzzamento catodico di films sottili superconduttori di niobio su cavita' risonanti a quarto d'onda in rame per l'accellerazione di ioni pesanti. IT1249440B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
ITRM910616A IT1249440B (it) 1991-08-14 1991-08-14 Metodo e dispositivo per la deposizione tramite spruzzamento catodico di films sottili superconduttori di niobio su cavita' risonanti a quarto d'onda in rame per l'accellerazione di ioni pesanti.
JP4233086A JPH05202465A (ja) 1991-08-14 1992-08-07 重イオン加速用銅製１／４波長共振空洞にニオビウムの超伝導薄膜をスパッタリングするための方法および装置
AT92830445T ATE169062T1 (de) 1991-08-14 1992-08-12 Verfahren und vorrichtung zum sputtern supraleitender dünnschichten aus niob auf kupferne viertelwellen-resonanzhohlräume zur beschleunigung schwerer ionen
EP92830445A EP0527713B1 (en) 1991-08-14 1992-08-12 Method and apparatus for sputtering superconducting thin films of niobium on quarter-wave resonant cavities of copper for accelerating heavy ions
DE69226407T DE69226407T2 (de) 1991-08-14 1992-08-12 Verfahren und Vorrichtung zum Sputtern supraleitender Dünnschichten aus Niob auf kupferne Viertelwellen-Resonanzhohlräume zur Beschleunigung schwerer Ionen
US07/930,197 US5306406A (en) 1991-08-14 1992-08-14 Method and apparatus for sputtering superconducting thin films of niobium on quarter-wave resonant cavities of copper for accelerating heavy ions
JP2003166309A JP2004003032A (ja) 1991-08-14 2003-06-11 重イオン加速用銅製１／４波長共振空洞にニオビウムの超伝導薄膜をスパッタリングするための方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITRM910616A IT1249440B (it) 1991-08-14 1991-08-14 Metodo e dispositivo per la deposizione tramite spruzzamento catodico di films sottili superconduttori di niobio su cavita' risonanti a quarto d'onda in rame per l'accellerazione di ioni pesanti.

Publications (3)

Publication Number Publication Date
ITRM910616A0 ITRM910616A0 (it) 1991-08-14
ITRM910616A1 ITRM910616A1 (it) 1993-02-14
IT1249440B true IT1249440B (it) 1995-02-23

Family

ID=11400319

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM910616A IT1249440B (it) 1991-08-14 1991-08-14 Metodo e dispositivo per la deposizione tramite spruzzamento catodico di films sottili superconduttori di niobio su cavita' risonanti a quarto d'onda in rame per l'accellerazione di ioni pesanti.

Country Status (6)

Country Link
US (1) US5306406A (it)
EP (1) EP0527713B1 (it)
JP (2) JPH05202465A (it)
AT (1) ATE169062T1 (it)
DE (1) DE69226407T2 (it)
IT (1) IT1249440B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69310722T2 (de) * 1993-06-14 1997-09-11 Istituto Nazionale Di Fisica N Herstellungsverfahren von nahtloser Radiofrequenz-Resonanzholräumen und dadurch erhaltenes Produkt
DE19921000A1 (de) * 1999-05-06 2000-11-09 Ald Vacuum Techn Ag Verfahren und Vorrichtung zum Bearbeiten von Werkstücken aus hochreinem Metall
US7879209B2 (en) * 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US8500973B2 (en) * 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US20060225817A1 (en) * 2005-04-11 2006-10-12 Konstantin Chuntonov Gas sorbents on the basis of intermetallic compounds and a method for producing the same
US7151347B1 (en) * 2005-06-28 2006-12-19 Jefferson Science Associates Llc Passivated niobium cavities
US8852959B2 (en) 2011-12-19 2014-10-07 Northrup Grumman Systems Corporation Low temperature resistor for superconductor circuits
CN104611677B (zh) * 2015-01-28 2018-01-19 西安交通大学 一种层界面结构可控的CuNb/Cu纳米合金薄膜制备方法
US11202362B1 (en) 2018-02-15 2021-12-14 Christopher Mark Rey Superconducting resonant frequency cavities, related components, and fabrication methods thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904362A (en) * 1987-07-24 1990-02-27 Miba Gleitlager Aktiengesellschaft Bar-shaped magnetron or sputter cathode arrangement

Also Published As

Publication number Publication date
EP0527713A2 (en) 1993-02-17
ITRM910616A1 (it) 1993-02-14
EP0527713B1 (en) 1998-07-29
EP0527713A3 (en) 1995-10-25
DE69226407T2 (de) 1999-02-04
US5306406A (en) 1994-04-26
ATE169062T1 (de) 1998-08-15
JP2004003032A (ja) 2004-01-08
ITRM910616A0 (it) 1991-08-14
JPH05202465A (ja) 1993-08-10
DE69226407D1 (de) 1998-09-03

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940830