JP2014502038A5 - - Google Patents
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- Publication number
- JP2014502038A5 JP2014502038A5 JP2013535360A JP2013535360A JP2014502038A5 JP 2014502038 A5 JP2014502038 A5 JP 2014502038A5 JP 2013535360 A JP2013535360 A JP 2013535360A JP 2013535360 A JP2013535360 A JP 2013535360A JP 2014502038 A5 JP2014502038 A5 JP 2014502038A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- transparent conductive
- conductive oxide
- oxide film
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 15
- 238000000151 deposition Methods 0.000 claims 14
- 238000004544 sputter deposition Methods 0.000 claims 11
- 239000000463 material Substances 0.000 claims 9
- 230000008021 deposition Effects 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 239000010409 thin film Substances 0.000 claims 7
- 229910016027 MoTi Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000002243 precursor Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 238000000427 thin-film deposition Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10189508.4 | 2010-10-29 | ||
| EP10189508A EP2447999A1 (en) | 2010-10-29 | 2010-10-29 | Method for depositing a thin film electrode and thin film stack |
| PCT/EP2011/068191 WO2012055728A1 (en) | 2010-10-29 | 2011-10-18 | Method for depositing a thin film electrode and thin film stack |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014502038A JP2014502038A (ja) | 2014-01-23 |
| JP2014502038A5 true JP2014502038A5 (enExample) | 2014-08-28 |
| JP5615442B2 JP5615442B2 (ja) | 2014-10-29 |
Family
ID=43836679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013535360A Active JP5615442B2 (ja) | 2010-10-29 | 2011-10-18 | 薄膜電極および薄膜スタックを堆積させる方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8361897B2 (enExample) |
| EP (1) | EP2447999A1 (enExample) |
| JP (1) | JP5615442B2 (enExample) |
| KR (1) | KR101760839B1 (enExample) |
| CN (1) | CN103201839B (enExample) |
| TW (1) | TWI515793B (enExample) |
| WO (1) | WO2012055728A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9379247B2 (en) * | 2012-06-28 | 2016-06-28 | Cbrite Inc. | High mobility stabile metal oxide TFT |
| KR20140104792A (ko) * | 2013-02-21 | 2014-08-29 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| KR102044667B1 (ko) * | 2013-05-28 | 2019-11-14 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법 |
| US9576984B1 (en) * | 2016-01-14 | 2017-02-21 | Hon Hai Precision Industry Co., Ltd. | Thin film transistor array panel and conducting structure |
| KR101829970B1 (ko) | 2016-02-01 | 2018-02-19 | 연세대학교 산학협력단 | 산화물 박막 트랜지스터 및 그 제조 방법 |
| WO2021239211A1 (en) * | 2020-05-25 | 2021-12-02 | Applied Materials, Inc. | Method for generating a layer stack and method for manufacturing a patterned layer stack |
| CN113233870B (zh) * | 2021-04-25 | 2023-01-13 | 先导薄膜材料（广东）有限公司 | 一种掺杂氧化镉靶材及其制备方法与应用 |
| KR102762721B1 (ko) * | 2022-05-02 | 2025-02-04 | 동의대학교 산학협력단 | 금속층의 상변태를 이용한 반투명 면상 발열체의 제조방법 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0197315A (ja) * | 1987-10-08 | 1989-04-14 | Toshiba Glass Co Ltd | 酸化錫導電膜の形成方法 |
| ES2185454B1 (es) | 2000-08-28 | 2004-05-01 | Centro De Investigaciones Energeticas, Medioambientales Y Tecnologicas (C.I.E.M.A.T.) | Metodo de obtencion de oxidos conductores electricos y transparentes mediante pulverizacion catodica. |
| US8138364B2 (en) | 2001-08-27 | 2012-03-20 | Northwestern University | Transparent conducting oxide thin films and related devices |
| US8038857B2 (en) * | 2004-03-09 | 2011-10-18 | Idemitsu Kosan Co., Ltd. | Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes |
| CN100593244C (zh) | 2004-03-19 | 2010-03-03 | 株式会社半导体能源研究所 | 形成图案的方法、薄膜晶体管、显示设备及其制造方法 |
| EP1624333B1 (en) | 2004-08-03 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and television set |
| JP5110803B2 (ja) * | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
| JP4886476B2 (ja) * | 2006-11-13 | 2012-02-29 | パナソニック電工株式会社 | 有機エレクトロルミネッセンス素子 |
| US8747630B2 (en) | 2007-01-16 | 2014-06-10 | Alliance For Sustainable Energy, Llc | Transparent conducting oxides and production thereof |
| TWI371112B (en) | 2007-10-02 | 2012-08-21 | Univ Chang Gung | Solar energy photoelectric conversion apparatus |
| KR101455304B1 (ko) * | 2007-10-05 | 2014-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법 |
| KR101567615B1 (ko) | 2007-11-02 | 2015-11-09 | 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 | 박막 광전지 애플리케이션용 투명 전도성 산화물 코팅 및 이의 제조 방법 |
| KR20090095026A (ko) * | 2008-03-04 | 2009-09-09 | 삼성전자주식회사 | 표시 장치 제조 방법 |
| US8129718B2 (en) * | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
| US8927981B2 (en) * | 2009-03-30 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8043981B2 (en) * | 2009-04-21 | 2011-10-25 | Applied Materials, Inc. | Dual frequency low temperature oxidation of a semiconductor device |
| CN101993032B (zh) * | 2009-08-14 | 2013-03-27 | 京东方科技集团股份有限公司 | 微结构薄膜图形和tft-lcd阵列基板制造方法 |
| WO2011039853A1 (ja) * | 2009-09-30 | 2011-04-07 | キヤノン株式会社 | 薄膜トランジスタ |
-
2010
- 2010-10-29 EP EP10189508A patent/EP2447999A1/en not_active Withdrawn
- 2010-11-04 US US12/939,855 patent/US8361897B2/en active Active
-
2011
- 2011-10-12 TW TW100136956A patent/TWI515793B/zh not_active IP Right Cessation
- 2011-10-18 CN CN201180051782.6A patent/CN103201839B/zh active Active
- 2011-10-18 KR KR1020137013633A patent/KR101760839B1/ko active Active
- 2011-10-18 WO PCT/EP2011/068191 patent/WO2012055728A1/en not_active Ceased
- 2011-10-18 JP JP2013535360A patent/JP5615442B2/ja active Active
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