JP5615442B2 - 薄膜電極および薄膜スタックを堆積させる方法 - Google Patents

薄膜電極および薄膜スタックを堆積させる方法 Download PDF

Info

Publication number
JP5615442B2
JP5615442B2 JP2013535360A JP2013535360A JP5615442B2 JP 5615442 B2 JP5615442 B2 JP 5615442B2 JP 2013535360 A JP2013535360 A JP 2013535360A JP 2013535360 A JP2013535360 A JP 2013535360A JP 5615442 B2 JP5615442 B2 JP 5615442B2
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive oxide
gas
oxide film
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013535360A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014502038A (ja
JP2014502038A5 (enExample
Inventor
ファビオ ピエラリージ，
ファビオ ピエラリージ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2014502038A publication Critical patent/JP2014502038A/ja
Publication of JP2014502038A5 publication Critical patent/JP2014502038A5/ja
Application granted granted Critical
Publication of JP5615442B2 publication Critical patent/JP5615442B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013535360A 2010-10-29 2011-10-18 薄膜電極および薄膜スタックを堆積させる方法 Active JP5615442B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10189508.4 2010-10-29
EP10189508A EP2447999A1 (en) 2010-10-29 2010-10-29 Method for depositing a thin film electrode and thin film stack
PCT/EP2011/068191 WO2012055728A1 (en) 2010-10-29 2011-10-18 Method for depositing a thin film electrode and thin film stack

Publications (3)

Publication Number Publication Date
JP2014502038A JP2014502038A (ja) 2014-01-23
JP2014502038A5 JP2014502038A5 (enExample) 2014-08-28
JP5615442B2 true JP5615442B2 (ja) 2014-10-29

Family

ID=43836679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013535360A Active JP5615442B2 (ja) 2010-10-29 2011-10-18 薄膜電極および薄膜スタックを堆積させる方法

Country Status (7)

Country Link
US (1) US8361897B2 (enExample)
EP (1) EP2447999A1 (enExample)
JP (1) JP5615442B2 (enExample)
KR (1) KR101760839B1 (enExample)
CN (1) CN103201839B (enExample)
TW (1) TWI515793B (enExample)
WO (1) WO2012055728A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9379247B2 (en) * 2012-06-28 2016-06-28 Cbrite Inc. High mobility stabile metal oxide TFT
KR20140104792A (ko) * 2013-02-21 2014-08-29 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
KR102044667B1 (ko) * 2013-05-28 2019-11-14 엘지디스플레이 주식회사 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법
US9576984B1 (en) * 2016-01-14 2017-02-21 Hon Hai Precision Industry Co., Ltd. Thin film transistor array panel and conducting structure
KR101829970B1 (ko) 2016-02-01 2018-02-19 연세대학교 산학협력단 산화물 박막 트랜지스터 및 그 제조 방법
WO2021239211A1 (en) * 2020-05-25 2021-12-02 Applied Materials, Inc. Method for generating a layer stack and method for manufacturing a patterned layer stack
CN113233870B (zh) * 2021-04-25 2023-01-13 先导薄膜材料（广东）有限公司 一种掺杂氧化镉靶材及其制备方法与应用
KR102762721B1 (ko) * 2022-05-02 2025-02-04 동의대학교 산학협력단 금속층의 상변태를 이용한 반투명 면상 발열체의 제조방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0197315A (ja) * 1987-10-08 1989-04-14 Toshiba Glass Co Ltd 酸化錫導電膜の形成方法
ES2185454B1 (es) 2000-08-28 2004-05-01 Centro De Investigaciones Energeticas, Medioambientales Y Tecnologicas (C.I.E.M.A.T.) Metodo de obtencion de oxidos conductores electricos y transparentes mediante pulverizacion catodica.
US8138364B2 (en) 2001-08-27 2012-03-20 Northwestern University Transparent conducting oxide thin films and related devices
US8038857B2 (en) * 2004-03-09 2011-10-18 Idemitsu Kosan Co., Ltd. Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
CN100593244C (zh) 2004-03-19 2010-03-03 株式会社半导体能源研究所 形成图案的方法、薄膜晶体管、显示设备及其制造方法
EP1624333B1 (en) 2004-08-03 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method thereof, and television set
JP5110803B2 (ja) * 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
JP4886476B2 (ja) * 2006-11-13 2012-02-29 パナソニック電工株式会社 有機エレクトロルミネッセンス素子
US8747630B2 (en) 2007-01-16 2014-06-10 Alliance For Sustainable Energy, Llc Transparent conducting oxides and production thereof
TWI371112B (en) 2007-10-02 2012-08-21 Univ Chang Gung Solar energy photoelectric conversion apparatus
KR101455304B1 (ko) * 2007-10-05 2014-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법
KR101567615B1 (ko) 2007-11-02 2015-11-09 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 박막 광전지 애플리케이션용 투명 전도성 산화물 코팅 및 이의 제조 방법
KR20090095026A (ko) * 2008-03-04 2009-09-09 삼성전자주식회사 표시 장치 제조 방법
US8129718B2 (en) * 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
US8927981B2 (en) * 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
CN101993032B (zh) * 2009-08-14 2013-03-27 京东方科技集团股份有限公司 微结构薄膜图形和tft-lcd阵列基板制造方法
WO2011039853A1 (ja) * 2009-09-30 2011-04-07 キヤノン株式会社 薄膜トランジスタ

Also Published As

Publication number Publication date
TWI515793B (zh) 2016-01-01
US20120104616A1 (en) 2012-05-03
WO2012055728A1 (en) 2012-05-03
JP2014502038A (ja) 2014-01-23
US8361897B2 (en) 2013-01-29
CN103201839A (zh) 2013-07-10
CN103201839B (zh) 2016-11-16
KR101760839B1 (ko) 2017-08-04
KR20140074861A (ko) 2014-06-18
EP2447999A1 (en) 2012-05-02
TW201234481A (en) 2012-08-16

Similar Documents

Publication Publication Date Title
JP5615442B2 (ja) 薄膜電極および薄膜スタックを堆積させる方法
TWI422034B (zh) 包含絕緣層之氧化物半導體裝置及使用氧化物半導體裝置之顯示設備
EP2741335B1 (en) Transistors, methods of manufacturing transistors, and electronic devices including transistors
US8435843B2 (en) Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
CN101529566B (zh) 布线膜的形成方法、晶体管及电子装置
JP6204917B2 (ja) アルゴンガス希釈によるシリコン含有層を堆積するための方法
CN102157564B (zh) 顶栅金属氧化物薄膜晶体管的制备方法
WO2009136645A2 (en) Thin film transistor and method of manufacturing the same
JP2010080936A (ja) アモルファス酸化物半導体及び該アモルファス酸化物半導体を用いた薄膜トランジスタ
JP2009152293A (ja) 薄膜トランジスタ、及びその製造方法、並びに表示装置
US9076721B2 (en) Oxynitride channel layer, transistor including the same and method of manufacturing the same
TWI577029B (zh) 用以形成一半導體氮氧化合物之方法及使用其之用以製造一薄膜電晶體之方法
JPWO2008081805A1 (ja) 配線膜の形成方法、トランジスタ、及び電子装置
CN102646715A (zh) 薄膜晶体管及其制造方法
KR20160060848A (ko) 박막 트랜지스터 및 그 제조 방법
CN104752516A (zh) 氧化物半导体薄膜晶体管及其制造方法
KR102145978B1 (ko) 어레이기판 및 이의 제조방법
JP2021097221A (ja) 導電領域の形成方法、及び薄膜トランジスタの製造方法
Cho et al. Novel oxide thin film transistors for transparent AMOLED
Moon et al. Control of trap density in channel layer for the higher stability of oxide thin film transistors under gate bias stress
KR20200057372A (ko) 도핑된 주석 산화물 박막 트랜지스터 및 그 제조 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140709

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140709

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20140709

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20140807

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140812

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140909

R150 Certificate of patent or registration of utility model

Ref document number: 5615442

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250