CN103201839B - 沉积薄膜电极与薄膜堆迭的方法 - Google Patents
沉积薄膜电极与薄膜堆迭的方法 Download PDFInfo
- Publication number
- CN103201839B CN103201839B CN201180051782.6A CN201180051782A CN103201839B CN 103201839 B CN103201839 B CN 103201839B CN 201180051782 A CN201180051782 A CN 201180051782A CN 103201839 B CN103201839 B CN 103201839B
- Authority
- CN
- China
- Prior art keywords
- transparent conductive
- conductive oxide
- oxide film
- gas
- sputtering
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10189508.4 | 2010-10-29 | ||
| EP10189508A EP2447999A1 (en) | 2010-10-29 | 2010-10-29 | Method for depositing a thin film electrode and thin film stack |
| PCT/EP2011/068191 WO2012055728A1 (en) | 2010-10-29 | 2011-10-18 | Method for depositing a thin film electrode and thin film stack |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103201839A CN103201839A (zh) | 2013-07-10 |
| CN103201839B true CN103201839B (zh) | 2016-11-16 |
Family
ID=43836679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180051782.6A Active CN103201839B (zh) | 2010-10-29 | 2011-10-18 | 沉积薄膜电极与薄膜堆迭的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8361897B2 (enExample) |
| EP (1) | EP2447999A1 (enExample) |
| JP (1) | JP5615442B2 (enExample) |
| KR (1) | KR101760839B1 (enExample) |
| CN (1) | CN103201839B (enExample) |
| TW (1) | TWI515793B (enExample) |
| WO (1) | WO2012055728A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9379247B2 (en) * | 2012-06-28 | 2016-06-28 | Cbrite Inc. | High mobility stabile metal oxide TFT |
| KR20140104792A (ko) * | 2013-02-21 | 2014-08-29 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| KR102044667B1 (ko) * | 2013-05-28 | 2019-11-14 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그의 제조방법 |
| US9576984B1 (en) * | 2016-01-14 | 2017-02-21 | Hon Hai Precision Industry Co., Ltd. | Thin film transistor array panel and conducting structure |
| KR101829970B1 (ko) | 2016-02-01 | 2018-02-19 | 연세대학교 산학협력단 | 산화물 박막 트랜지스터 및 그 제조 방법 |
| WO2021239211A1 (en) * | 2020-05-25 | 2021-12-02 | Applied Materials, Inc. | Method for generating a layer stack and method for manufacturing a patterned layer stack |
| CN113233870B (zh) * | 2021-04-25 | 2023-01-13 | 先导薄膜材料（广东）有限公司 | 一种掺杂氧化镉靶材及其制备方法与应用 |
| KR102762721B1 (ko) * | 2022-05-02 | 2025-02-04 | 동의대학교 산학협력단 | 금속층의 상변태를 이용한 반투명 면상 발열체의 제조방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1918672A (zh) * | 2004-03-09 | 2007-02-21 | 出光兴产株式会社 | 薄膜晶体管及薄膜晶体管基板及它们的制造方法及使用了它们的液晶显示装置及相关的装置及方法以及溅射靶及使用它成膜的透明导电膜及透明电极及相关的装置及方法 |
| CN101401213A (zh) * | 2006-03-17 | 2009-04-01 | 佳能株式会社 | 使用氧化物膜用于沟道的场效应晶体管及其制造方法 |
| CN101661952A (zh) * | 2008-08-28 | 2010-03-03 | 佳能株式会社 | 非晶氧化物半导体和使用其的薄膜晶体管 |
| CN101859798A (zh) * | 2009-03-30 | 2010-10-13 | 株式会社半导体能源研究所 | 半导体装置以及其制造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0197315A (ja) * | 1987-10-08 | 1989-04-14 | Toshiba Glass Co Ltd | 酸化錫導電膜の形成方法 |
| ES2185454B1 (es) | 2000-08-28 | 2004-05-01 | Centro De Investigaciones Energeticas, Medioambientales Y Tecnologicas (C.I.E.M.A.T.) | Metodo de obtencion de oxidos conductores electricos y transparentes mediante pulverizacion catodica. |
| US8138364B2 (en) | 2001-08-27 | 2012-03-20 | Northwestern University | Transparent conducting oxide thin films and related devices |
| CN100593244C (zh) | 2004-03-19 | 2010-03-03 | 株式会社半导体能源研究所 | 形成图案的方法、薄膜晶体管、显示设备及其制造方法 |
| EP1624333B1 (en) | 2004-08-03 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and television set |
| JP4886476B2 (ja) * | 2006-11-13 | 2012-02-29 | パナソニック電工株式会社 | 有機エレクトロルミネッセンス素子 |
| US8747630B2 (en) | 2007-01-16 | 2014-06-10 | Alliance For Sustainable Energy, Llc | Transparent conducting oxides and production thereof |
| TWI371112B (en) | 2007-10-02 | 2012-08-21 | Univ Chang Gung | Solar energy photoelectric conversion apparatus |
| KR101455304B1 (ko) * | 2007-10-05 | 2014-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법 |
| KR101567615B1 (ko) | 2007-11-02 | 2015-11-09 | 에이지씨 플랫 글래스 노스 아메리카, 인코퍼레이티드 | 박막 광전지 애플리케이션용 투명 전도성 산화물 코팅 및 이의 제조 방법 |
| KR20090095026A (ko) * | 2008-03-04 | 2009-09-09 | 삼성전자주식회사 | 표시 장치 제조 방법 |
| US8043981B2 (en) * | 2009-04-21 | 2011-10-25 | Applied Materials, Inc. | Dual frequency low temperature oxidation of a semiconductor device |
| CN101993032B (zh) * | 2009-08-14 | 2013-03-27 | 京东方科技集团股份有限公司 | 微结构薄膜图形和tft-lcd阵列基板制造方法 |
| WO2011039853A1 (ja) * | 2009-09-30 | 2011-04-07 | キヤノン株式会社 | 薄膜トランジスタ |
-
2010
- 2010-10-29 EP EP10189508A patent/EP2447999A1/en not_active Withdrawn
- 2010-11-04 US US12/939,855 patent/US8361897B2/en active Active
-
2011
- 2011-10-12 TW TW100136956A patent/TWI515793B/zh not_active IP Right Cessation
- 2011-10-18 CN CN201180051782.6A patent/CN103201839B/zh active Active
- 2011-10-18 KR KR1020137013633A patent/KR101760839B1/ko active Active
- 2011-10-18 WO PCT/EP2011/068191 patent/WO2012055728A1/en not_active Ceased
- 2011-10-18 JP JP2013535360A patent/JP5615442B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1918672A (zh) * | 2004-03-09 | 2007-02-21 | 出光兴产株式会社 | 薄膜晶体管及薄膜晶体管基板及它们的制造方法及使用了它们的液晶显示装置及相关的装置及方法以及溅射靶及使用它成膜的透明导电膜及透明电极及相关的装置及方法 |
| CN101401213A (zh) * | 2006-03-17 | 2009-04-01 | 佳能株式会社 | 使用氧化物膜用于沟道的场效应晶体管及其制造方法 |
| CN101661952A (zh) * | 2008-08-28 | 2010-03-03 | 佳能株式会社 | 非晶氧化物半导体和使用其的薄膜晶体管 |
| CN101859798A (zh) * | 2009-03-30 | 2010-10-13 | 株式会社半导体能源研究所 | 半导体装置以及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI515793B (zh) | 2016-01-01 |
| US20120104616A1 (en) | 2012-05-03 |
| WO2012055728A1 (en) | 2012-05-03 |
| JP2014502038A (ja) | 2014-01-23 |
| US8361897B2 (en) | 2013-01-29 |
| CN103201839A (zh) | 2013-07-10 |
| JP5615442B2 (ja) | 2014-10-29 |
| KR101760839B1 (ko) | 2017-08-04 |
| KR20140074861A (ko) | 2014-06-18 |
| EP2447999A1 (en) | 2012-05-02 |
| TW201234481A (en) | 2012-08-16 |
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| C14 | Grant of patent or utility model | ||
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